JPH0514507Y2 - - Google Patents
Info
- Publication number
- JPH0514507Y2 JPH0514507Y2 JP1986095749U JP9574986U JPH0514507Y2 JP H0514507 Y2 JPH0514507 Y2 JP H0514507Y2 JP 1986095749 U JP1986095749 U JP 1986095749U JP 9574986 U JP9574986 U JP 9574986U JP H0514507 Y2 JPH0514507 Y2 JP H0514507Y2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- plasma
- electrode
- reaction
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012212 insulator Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 13
- 238000005530 etching Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986095749U JPH0514507Y2 (US20090163788A1-20090625-C00002.png) | 1986-06-23 | 1986-06-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986095749U JPH0514507Y2 (US20090163788A1-20090625-C00002.png) | 1986-06-23 | 1986-06-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS633139U JPS633139U (US20090163788A1-20090625-C00002.png) | 1988-01-11 |
| JPH0514507Y2 true JPH0514507Y2 (US20090163788A1-20090625-C00002.png) | 1993-04-19 |
Family
ID=30960683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986095749U Expired - Lifetime JPH0514507Y2 (US20090163788A1-20090625-C00002.png) | 1986-06-23 | 1986-06-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0514507Y2 (US20090163788A1-20090625-C00002.png) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123173A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Sputter etching method |
| JPS5582438A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Plasma etching device |
-
1986
- 1986-06-23 JP JP1986095749U patent/JPH0514507Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123173A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Sputter etching method |
| JPS5582438A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Plasma etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS633139U (US20090163788A1-20090625-C00002.png) | 1988-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08335567A (ja) | プラズマ処理装置 | |
| JP3535309B2 (ja) | 減圧処理装置 | |
| KR20010030090A (ko) | 플라즈마 처리 장치 | |
| JPH0514507Y2 (US20090163788A1-20090625-C00002.png) | ||
| JP2000124205A (ja) | プラズマエッチング装置 | |
| JPH05114582A (ja) | 真空処理装置 | |
| JP2000082698A (ja) | プラズマ処理装置 | |
| JPH0735386Y2 (ja) | プラズマ反応処理装置 | |
| JPH07153743A (ja) | プラズマ処理装置 | |
| JP3002496B2 (ja) | 半導体ウェハのドライエッチング方法 | |
| KR920007103A (ko) | 플라스마 테이퍼 에칭 방법 | |
| JPS6025234A (ja) | マイクロ波プラズマ処理装置 | |
| JPH05243190A (ja) | プラズマ装置 | |
| JPH0613345A (ja) | プラズマ反応処理装置 | |
| US6551520B1 (en) | Exhausting method and means in a dry etching apparatus | |
| JPS63260033A (ja) | プラズマ反応処理装置 | |
| JP3255966B2 (ja) | プラズマ処理装置 | |
| KR20000019096A (ko) | 반도체 플라즈마설비의 웨이퍼 가드링 | |
| JPH03140469A (ja) | プラズマ化学気相成長装置 | |
| JP2001284256A (ja) | プラズマ処理装置 | |
| JPS6032972B2 (ja) | エツチング装置 | |
| JPS6313333A (ja) | ドライエツチング装置 | |
| JP3512210B2 (ja) | プラズマ処理装置 | |
| JPH01268127A (ja) | ドライエッチング装置 | |
| JPH0517880Y2 (US20090163788A1-20090625-C00002.png) |
