JPH05145050A - Package for accommodating sensor element - Google Patents
Package for accommodating sensor elementInfo
- Publication number
- JPH05145050A JPH05145050A JP30333091A JP30333091A JPH05145050A JP H05145050 A JPH05145050 A JP H05145050A JP 30333091 A JP30333091 A JP 30333091A JP 30333091 A JP30333091 A JP 30333091A JP H05145050 A JPH05145050 A JP H05145050A
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- wiring layer
- metallized wiring
- package
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はファクシミリ等において
使用される画像情報を電気信号に変換するセンサー素子
を収容するためのセンサー素子収納用パッケージの改良
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a sensor element housing package for housing a sensor element for converting image information used in a facsimile or the like into an electric signal.
【０００２】[0002]
【従来の技術】従来、画像情報を電気信号に変換するセ
ンサー素子を収容するためのセンサー素子収納用パッケ
ージは、上面中央部にセンサー素子が載置固定される載
置部を有する矩形状の絶縁基体と、該絶縁基体のセンサ
ー素子載置部を囲繞するように中央部に開孔を有する枠
体と、内部に収容するセンサー素子を外部電気回路に電
気的に接続するための多数の外部リード端子とから構成
されており、絶縁基体の上面に外部リード端子及び枠体
を順次載置させ、各々をガラスから成る接着材で接着固
定することによって製作されている。2. Description of the Related Art Conventionally, a sensor element housing package for housing a sensor element for converting image information into an electric signal has a rectangular insulating shape having a mounting portion for mounting and fixing the sensor element in the center of the upper surface. A base body, a frame body having an opening in the center so as to surround the sensor element mounting portion of the insulating base body, and a large number of external leads for electrically connecting the sensor element housed inside to an external electric circuit. The external lead terminals and the frame are sequentially placed on the upper surface of the insulating base, and they are bonded and fixed with an adhesive made of glass.
【０００３】かかる従来のセンサー素子収納用パッケー
ジは枠体の開孔内に位置する絶縁基体のセンサー素子載
置部にセンサー素子を載置固定した後、該センサー素子
の各電極をボンディングワイヤを介して外部リード端子
に接続させるとともに枠体の上部にガラスから成る透光
性蓋体を封止材を介して接合し、内部にセンサー素子を
気密に封止することによってセンサー装置となる。In such a conventional package for storing a sensor element, the sensor element is mounted and fixed on the sensor element mounting portion of the insulating substrate located in the opening of the frame, and then each electrode of the sensor element is bonded via bonding wires. The sensor device is formed by connecting the sensor element to the external lead terminal, bonding the translucent lid made of glass to the upper part of the frame through the sealing material, and hermetically sealing the sensor element inside.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、この従
来のセンサー素子収納用パッケージにおいては、外部リ
ード端子が絶縁基体と枠体との間にガラスを介して固定
されており、該ガラスは機械的強度に劣るため外部リー
ド端子を外部電気回路に接続させる際等において外部リ
ード端子を介して外力が印加されるとガラスは破損して
しまい、ガラスが一旦破損するとセンサー素子を収容す
るパッケージの気密封止が破れ、内部に収容するセンサ
ー素子を長期間にわたり正常、且つ安定に作動させるこ
とができないという欠点を有していた。However, in this conventional package for accommodating sensor elements, the external lead terminals are fixed via the glass between the insulating base and the frame, and the glass has a mechanical strength. Since the external lead terminal is connected to an external electric circuit, the glass will be damaged if external force is applied through the external lead terminal, and once the glass is damaged, the package that houses the sensor element will be hermetically sealed. However, the sensor element housed inside cannot be operated normally and stably for a long period of time.
【０００５】また前記外部リード端子は絶縁基体と枠体
との間にガラスを介して固定する際、ガラスを溶融させ
る熱によって表面に酸化膜が容易に形成され、該酸化膜
によって外部リード端子を外部電気回路に確実に電気的
接続することができないという欠点も有していた。Further, when the external lead terminal is fixed between the insulating substrate and the frame through the glass, an oxide film is easily formed on the surface by the heat of melting the glass, and the oxide film serves to form the external lead terminal. It also has a drawback that it cannot be reliably electrically connected to an external electric circuit.
【０００６】[0006]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は内部の気密封止を完全としてセンサー素
子を長期間にわたり正常、且つ安定に作動させるととも
にセンサー素子の各電極を外部電気回路に確実に接続す
ることができるセンサー素子収納用パッケージを提供す
ることにある。DISCLOSURE OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its object is to operate the sensor element normally and stably for a long period of time by completely sealing the inside airtightly and to keep each electrode of the sensor element. Another object of the present invention is to provide a sensor element housing package that can be reliably connected to an external electric circuit.
【０００７】[0007]
【課題を解決するための手段】本発明はセンサー素子が
載置固定される載置部及び該載置部周辺から底面にかけ
て導出されるメタライズ配線層を有する絶縁基体と、前
記絶縁基体上に取着され、内部にセンサー素子を収容す
る空所を形成するための枠体とから成るセンサー素子収
納用パッケージであって、前記絶縁基体のメタライズ配
線層が70.0乃至90.0重量％の銀と10.0乃至30.0重量％の
パラジウムと1.0 乃至5.0 重量％のビスマスから成って
いることを特徴とするものである。According to the present invention, there is provided an insulating base having a mounting portion on which a sensor element is mounted and fixed, and a metallized wiring layer extending from the periphery of the mounting portion to a bottom surface, and the insulating base. A sensor element housing package, comprising: a frame for forming a cavity for housing a sensor element, wherein the metallized wiring layer of the insulating substrate is 70.0 to 90.0% by weight of silver and 10.0 to 30.0%. It is characterized by being composed of wt% palladium and 1.0 to 5.0 wt% bismuth.
【０００８】[0008]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1 及び図2 は本発明のセンサー素子収納用パッケ
ージの一実施例を示し、1は絶縁基体、2 は枠体であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for housing a sensor element of the present invention, in which 1 is an insulating base and 2 is a frame.
【０００９】前記絶縁基体１は酸化アルミニウム質焼結
体、ムライト質焼結体、窒化アルミニウム質焼結体、炭
化珪素質焼結体等の電気絶縁材料から成り、その上面中
央部にセンサー素子3 が載置固定される載置部A を有
し、該載置部A にはセンサー素子3 がガラス、有機樹脂
等の接着材を介し固定される。The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. Has a mounting portion A on which the sensor element 3 is mounted and fixed, and the sensor element 3 is fixed to the mounting portion A via an adhesive material such as glass or organic resin.
【００１０】前記絶縁基体1 は例えば、酸化アルミニウ
ム質焼結体から成る場合、まずアルミナ(Al 2 O 3 ) 、
シリカ(SiO2 ) 、マグネシア(MgO) 、カルシア(CaO) 等
の原料粉末を矩形形状のプレス型内に充填させるととも
に一定圧力を印加して形成し、次に前記成形体を約1500
℃の温度で焼成することによって製作される。When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, first, alumina (Al 2 O 3 )
Silica (SiO 2 ), magnesia (MgO), calcia (CaO), and other raw material powders are filled into a rectangular press die and a constant pressure is applied to form it.
It is manufactured by firing at a temperature of ℃.
【００１１】尚、前記絶縁基体1 はその上面の反りを80
μm以下としておくとセンサー素子3 の長さが例えば15m
m以上の長いものであっても絶縁基体1 の上面に水平に
固定でき、センサー素子3における画像情報から電気信
号への変換を正確となすことができる。従って、前記絶
縁基体1 はその上面の反りを80μm 以下としておくこと
が好ましい。The insulating substrate 1 has a warp of 80
If it is less than μm, the length of the sensor element 3 will be 15m, for example.
Even if the length is longer than m, it can be fixed horizontally on the upper surface of the insulating substrate 1, and the image information in the sensor element 3 can be accurately converted into an electric signal. Therefore, it is preferable that the upper surface of the insulating substrate 1 has a warp of 80 μm or less.
【００１２】また前記絶縁基体1 にはセンサー素子載置
部A 周辺から側面を介し底面に導出されている複数個の
メタライズ配線層4 が被着されており、該メタライズ配
線層4 のセンサー素子載置部A 周辺部にはセンサー素子
3 の各電極がボンディングワイヤ5 を介して電気的に接
続され、また絶縁基体1 の底面部は外部電気回路基板の
配線導体に接続される。Further, a plurality of metallized wiring layers 4 extending from the periphery of the sensor element mounting portion A through the side surface to the bottom surface are adhered to the insulating substrate 1, and the sensor element mounting portions of the metallized wiring layer 4 are mounted. A sensor element is installed around the holder A.
Each electrode of 3 is electrically connected through a bonding wire 5, and the bottom surface of the insulating substrate 1 is connected to a wiring conductor of an external electric circuit board.
【００１３】前記メタライズ配線層5 は70.0乃至90.0重
量％の銀(Ag)と10.0乃至30.0重量％のパラジウム(Pd)と
1.0 乃至5.0 重量％のビスマス(Bi)とで形成されてお
り、該銀、パラジウム、ビスマスの混合粉末に適当な有
機溶剤、溶媒を添加混合して得た金属ペーストを絶縁基
体1 のセンサー素子載置部A 周辺から底面にかけて従来
周知のスクリーン印刷法等の厚膜手法を採用して印刷塗
布するとともにこれを高温で焼き付けることによって形
成される。The metallized wiring layer 5 comprises 70.0 to 90.0 wt% silver (Ag) and 10.0 to 30.0 wt% palladium (Pd).
It is formed of 1.0 to 5.0% by weight of bismuth (Bi), and a metal paste obtained by adding and mixing an appropriate organic solvent and solvent to the mixed powder of silver, palladium and bismuth is mounted on the insulating substrate 1 as a sensor element. It is formed by printing and applying a thick film technique such as a conventionally known screen printing method from the periphery of the placement portion A to the bottom surface and baking it at a high temperature.
【００１４】尚、前記メタライズ配線層4 はそれに含ま
れるパラジウムが半田等のロウ材に吸収されるのを有効
に防止する成分であり、含有量が10.0重量％未満である
と前記性質は付与されず、メタライズ配線層4 を外部電
気回路基板の配線導体に半田等のロウ材を介して接続す
るとメタライズ配線層4 がロウ材に吸収されて内部に収
容するセンサー素子3 を外部電気回路に強固に電気的接
続することができず、また30.0重量％を越えるとメタラ
イズ配線層4 の導通抵抗が上がり、センサー素子3 への
電気信号の出し入れに支障を生じる。従って、メタライ
ズ配線層4 に含まれるパラジウムの量は10.0乃至30.0重
量％の範囲に特定される。The metallized wiring layer 4 is a component that effectively prevents the palladium contained therein from being absorbed by a brazing material such as solder. If the content is less than 10.0% by weight, the above properties are imparted. If the metallized wiring layer 4 is connected to the wiring conductor of the external electric circuit board via a brazing material such as solder, the metallized wiring layer 4 is absorbed by the brazing material and the sensor element 3 housed inside is firmly attached to the external electric circuit. It cannot be electrically connected, and if it exceeds 30.0% by weight, the conduction resistance of the metallized wiring layer 4 rises, which hinders the input and output of an electric signal to and from the sensor element 3. Therefore, the amount of palladium contained in the metallized wiring layer 4 is specified in the range of 10.0 to 30.0% by weight.
【００１５】また前記メタライズ配線層4 に含まれるビ
スマスはメタライズ配線層4 を絶縁基体1 に強固に被着
させる作用を為し、その含有量が1.0 重量％未満であれ
ば前記性質は付与されず、また5.0 重量％を越えるとメ
タライズ配線層4 の半田等のロウ材に対する濡れ性が悪
くなり、メタライズ配線層4 を外部電気回路基板の配線
導体に半田等のロウ材を介して接続する際にメタライズ
配線層4 と配線導体との接合強度が低くなってセンサー
素子3 を外部電気回路に強固に電気的接続することがで
きなくなる。従って、メタライズ配線層4 に含まれるビ
スマスの量は1.0 乃至5.0 重量％の範囲に特定される。The bismuth contained in the metallized wiring layer 4 serves to firmly adhere the metallized wiring layer 4 to the insulating substrate 1. If the content thereof is less than 1.0% by weight, the above properties are not imparted. In addition, if it exceeds 5.0% by weight, the wettability of the metallized wiring layer 4 to the brazing material such as solder deteriorates, and when connecting the metallized wiring layer 4 to the wiring conductor of the external electric circuit board through the brazing material such as soldering. The joint strength between the metallized wiring layer 4 and the wiring conductor becomes low, and the sensor element 3 cannot be firmly electrically connected to the external electric circuit. Therefore, the amount of bismuth contained in the metallized wiring layer 4 is specified in the range of 1.0 to 5.0% by weight.
【００１６】更に前記70.0乃至90.0重量％の銀(Ag)と1
0.0乃至30.0重量％のパラジウム(Pd)と1.0 乃至5.0 重
量％のビスマス(Bi)とで形成されるメタライズ配線層4
は500℃までの温度において耐酸化性を有しており、そ
のため後述する絶縁基体1 の上面に枠体2 をガラスを介
して取着してもメタライズ配線層4 の表面にはガラスの
溶融熱によって酸化物が形成されることは殆どなく、メ
タライズ配線層4 を外部電気回路基板の配線導体に強固
に接合させることもできる。Further, the above 70.0 to 90.0% by weight of silver (Ag) and 1
Metallized wiring layer 4 composed of 0.0 to 30.0 wt% palladium (Pd) and 1.0 to 5.0 wt% bismuth (Bi)
Has a resistance to oxidation at temperatures up to 500 ° C. Therefore, even if the frame body 2 is attached to the upper surface of the insulating substrate 1 described below through glass, the heat of melting of the glass on the surface of the metallized wiring layer 4 Almost no oxide is formed by this, and the metallized wiring layer 4 can be firmly bonded to the wiring conductor of the external electric circuit board.
【００１７】前記絶縁基体1 の上面にはまた枠体2 がガ
ラスから成る接着材6 を介して取着されており、該枠体
2 は絶縁基体1のセンサー素子3 が載置固定される載置
部Aを囲繞するような枠状の形状となっている。この枠
体2 はその中央部の開孔と絶縁基体1 の上面とでセンサ
ー素子3 を内部に収容するための空所を形成する。A frame 2 is attached to the upper surface of the insulating substrate 1 via an adhesive 6 made of glass.
Reference numeral 2 has a frame-like shape surrounding a mounting portion A on which the sensor element 3 of the insulating base 1 is mounted and fixed. The frame body 2 forms a space for accommodating the sensor element 3 inside by the opening in the central portion and the upper surface of the insulating substrate 1.
【００１８】前記枠体2 は酸化アルミニウム質焼結体、
ムライト質焼結体、窒化アルミニウム質焼結体、炭化珪
素質焼結体等の電気絶縁材料から成り、前述の絶縁基体
1 と同様の方法、即ち、酸化アルミニウム質焼結体から
成る場合にはアルミナ(Al 2 O 3 ) 、シリカ(SiO2 ) 、
マグネシア(MgO) 、カルシア(CaO) 等の原料粉末をプレ
ス成形法により枠状に成形するとともに該成形体を約16
00℃の温度で焼成することによって製作される。The frame 2 is an aluminum oxide sintered body,
The insulating base material is made of an electrically insulating material such as a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body.
A method similar to 1, that is, alumina (Al 2 O 3 ) when composed of an aluminum oxide sintered body, silica (SiO 2 ),
Raw material powders such as magnesia (MgO) and calcia (CaO) are molded into a frame shape by press molding and
It is manufactured by firing at a temperature of 00 ° C.
【００１９】また前記絶縁基体1 と枠体2 とを取着する
接着材6 はガラスから成り、例えば酸化鉛50.0乃至70.0
重量％、酸化珪素1.0 乃至7.0 重量％、酸化ホウ素4.0
乃至14.0重量％、酸化亜鉛5.0 乃至15.0重量％にフィラ
ーとしてのジルコンを10.0乃至30.0重量％含有させたも
のが好適に使用される。The adhesive 6 for attaching the insulating base 1 and the frame 2 is made of glass, for example, lead oxide 50.0 to 70.0.
% By weight, silicon oxide 1.0 to 7.0% by weight, boron oxide 4.0
It is suitable to use zircon as a filler in an amount of 10.0 to 34.0% by weight, zinc oxide in an amount of 5.0 to 15.0% by weight, and zircon as a filler in an amount of 10.0 to 30.0% by weight.
【００２０】前記接着材6 による絶縁基体1 と枠体2 の
取着は、まず絶縁基体1 の上面もしくは枠体2 の下面に
予め接着材6 を塗布しておき、次に前記絶縁基体1 の上
面に枠体2 を間に接着材6 を挟むようにして載置させ、
最後にこれを約450 ℃の温度に加熱し、絶縁基体1 もし
くは枠体2 に予め塗布させておいた接着材を溶融させる
ことによって行われる。この場合、接着材6 を溶融させ
る熱が絶縁基体1 に被着させたメタライズ配線層4 に印
加されても、該メタライズ配線層4 は酸化され難い材料
で形成されていることからメタライズ配線層4 の表面に
は酸化物膜が形成されることは殆ど無く、その結果、メ
タライズ配線層4 を外部電気回路基板の配線導体に強固
に接続させることができる。To attach the insulating base 1 and the frame 2 with the adhesive 6, the adhesive 6 is first applied to the upper surface of the insulating base 1 or the lower surface of the frame 2, and then the insulating base 1 is attached. Place the frame body 2 on the top surface with the adhesive 6 sandwiched between them,
Finally, this is heated to a temperature of about 450 ° C. to melt the adhesive material previously applied to the insulating substrate 1 or the frame 2. In this case, even if heat for melting the adhesive material 6 is applied to the metallized wiring layer 4 applied to the insulating substrate 1, the metallized wiring layer 4 is formed of a material that is difficult to be oxidized, and thus the metallized wiring layer 4 is formed. An oxide film is hardly formed on the surface of the metallized wiring layer, and as a result, the metallized wiring layer 4 can be firmly connected to the wiring conductor of the external electric circuit board.
【００２１】前記絶縁基体1 上に取着された枠体2 の上
面にはまた透光性の蓋体7 が樹脂等から成る封止材を介
して接合され、これによって内部にセンサー素子3 が気
密に収容される。A translucent lid 7 is joined to the upper surface of the frame 2 attached on the insulating substrate 1 through a sealing material made of resin or the like, whereby the sensor element 3 is internally provided. Airtightly housed.
【００２２】前記透光性蓋体7 はサファイヤやガラス等
の光を透過し得る透光性の材料から成り、外部の画像情
報を内部に収容するセンサー素子3に照射する作用を為
す。The light-transmitting lid 7 is made of a light-transmitting material such as sapphire or glass capable of transmitting light, and has a function of irradiating the sensor element 3 housed therein with external image information.
【００２３】尚、前記透光性蓋体7 は、例えばガラスか
ら成る場合、酸化珪素、酸化アルミニウム、酸化カルシ
ウム、酸化バリウム等のガラス成分粉末を溶融冷却する
とともに平板状に形成することによって製作される。When the translucent lid 7 is made of glass, for example, it is manufactured by melting and cooling glass component powders such as silicon oxide, aluminum oxide, calcium oxide, barium oxide and the like to form a flat plate. It
【００２４】かくしてこのセンサー素子収納用パッケー
ジによれば、絶縁基体1 のセンサー素子載置部A にセン
サー素子3 を接着材を介して載置固定するとともに該セ
ンサー素子3 の各電極をボンディングワイヤ5 を介しメ
タライズ配線層4 に電気的に接続した後、枠体2 の上面
にガラス等から成る透光性の蓋体7 を樹脂等の封止材で
接合させ、内部にセンサー素子3 を気密に封止すること
によって最終製品としてのセンサー装置となる。Thus, according to this sensor element housing package, the sensor element 3 is mounted and fixed on the sensor element mounting portion A of the insulating substrate 1 via the adhesive, and each electrode of the sensor element 3 is bonded by the bonding wire 5 After electrically connecting to the metallized wiring layer 4 via the, the translucent lid 7 made of glass or the like is bonded to the upper surface of the frame 2 with a sealing material such as resin, and the sensor element 3 is hermetically sealed inside. By encapsulating, it becomes a sensor device as a final product.
【００２５】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えばメタライズ配線層4 の表
面に金(Au)、白金(Pt)等の金属を被着させておいてもよ
い。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention. For example, the surface of the metallized wiring layer 4 can be made of gold (Au). ), Platinum (Pt), or other metal may be deposited.
【００２６】[0026]
【発明の効果】本発明のセンサー素子収納用パッケージ
によればセンサー素子を外部電気回路に接続するのに銀
70.0乃至90.0重量％、パラジウム10.0乃至30.0重量％、
ビスマス1.0 乃至5.0 重量％から成る耐酸化性に優れた
メタライズ配線層を使用したことから絶縁基体にガラス
から成る接着材を介して枠体を取着したとしてもメタラ
イズ配線層の表面にはガラスの溶融熱による酸化物膜が
形成されることは殆どなく、その結果、メタライズ配線
層を外部電気回路基板の配線導体に強固に接続させるこ
とができる。According to the package for accommodating a sensor element of the present invention, silver is used to connect the sensor element to an external electric circuit.
70.0 to 90.0% by weight, palladium 10.0 to 30.0% by weight,
Since the metallized wiring layer composed of 1.0 to 5.0% by weight of bismuth and having excellent oxidation resistance is used, even if the frame body is attached to the insulating substrate with the adhesive made of glass, the surface of the metallized wiring layer is covered with glass. An oxide film is hardly formed by the heat of fusion, and as a result, the metallized wiring layer can be firmly connected to the wiring conductor of the external electric circuit board.
【００２７】また本発明のセンサー素子収納用パッケー
ジは内部に収容するセンサー素子を絶縁基体に被着形成
させたメタライズ配線層によって外部電気回路と接続す
るためセンサー素子を外部電気回路に接続させる際に絶
縁基体と枠体との間に介在するガラスに外力が印加さ
れ、該ガラスを破損させることは殆ど無く、その結果、
パッケージの気密封止を完全して、内部に収容するセン
サー素子を長期間にわたり正常、且つ安定に作動させる
ことが可能となる。The sensor element housing package of the present invention is connected to an external electric circuit by a metallized wiring layer formed by depositing the sensor element housed inside on an insulating substrate. External force is hardly applied to the glass interposed between the insulating base and the frame, and the glass is hardly damaged. As a result,
By completely hermetically sealing the package, the sensor element housed inside can be normally and stably operated for a long period of time.
【図１】本発明のセンサー素子収納用パッケージの一実
施例を示す拡大断面図である。FIG. 1 is an enlarged cross-sectional view showing an embodiment of a sensor element housing package of the present invention.
【図２】図１に示すパッケージの枠体を取着させた絶縁
基体の平面図である。FIG. 2 is a plan view of an insulating base to which the frame body of the package shown in FIG. 1 is attached.
１・・・・・絶縁基体 ２・・・・・枠体 ３・・・・・センサー素子 ４・・・・・メタライズ配線層 ６・・・・・ガラスから成る接着材 1 ... Insulating substrate 2 ... Frame 3 ... Sensor element 4 ... Metallized wiring layer 6 ... Adhesive made of glass
Claims (1)
該載置部周辺から底面にかけて導出されるメタライズ配
線層を有する絶縁基体と、前記絶縁基体上に取着され、
内部にセンサー素子を収容する空所を形成するための枠
体とから成るセンサー素子収納用パッケージであって、
前記絶縁基体のメタライズ配線層が70.0乃至90.0重量％
の銀と10.0乃至30.0重量％のパラジウムと1.0 乃至5.0
重量％のビスマスから成っていることを特徴とするセン
サー素子収納用パッケージ。1. An insulating base having a mounting portion on which a sensor element is mounted and fixed, and a metallized wiring layer led out from the periphery of the mounting portion to a bottom surface, and attached to the insulating base.
A sensor element housing package comprising a frame for forming a space for housing a sensor element inside,
70.0 to 90.0% by weight of the metallized wiring layer of the insulating substrate
Silver and 10.0 to 30.0% by weight palladium and 1.0 to 5.0
A package for storing sensor elements, which is made of bismuth by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30333091A JP2851733B2 (en) | 1991-11-19 | 1991-11-19 | Package for storing sensor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30333091A JP2851733B2 (en) | 1991-11-19 | 1991-11-19 | Package for storing sensor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05145050A true JPH05145050A (en) | 1993-06-11 |
| JP2851733B2 JP2851733B2 (en) | 1999-01-27 |
Family
ID=17919679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30333091A Expired - Fee Related JP2851733B2 (en) | 1991-11-19 | 1991-11-19 | Package for storing sensor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2851733B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006147972A (en) * | 2004-11-24 | 2006-06-08 | Kyocera Corp | Package for housing electronic part element, electronic device and packaging structure thereof |
-
1991
- 1991-11-19 JP JP30333091A patent/JP2851733B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006147972A (en) * | 2004-11-24 | 2006-06-08 | Kyocera Corp | Package for housing electronic part element, electronic device and packaging structure thereof |
| JP4522236B2 (en) * | 2004-11-24 | 2010-08-11 | 京セラ株式会社 | Electronic device and electronic device mounting structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2851733B2 (en) | 1999-01-27 |
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