JPH05136452A - Semiconductor relay and its manufacture - Google Patents

Semiconductor relay and its manufacture

Info

Publication number
JPH05136452A
JPH05136452A JP27877591A JP27877591A JPH05136452A JP H05136452 A JPH05136452 A JP H05136452A JP 27877591 A JP27877591 A JP 27877591A JP 27877591 A JP27877591 A JP 27877591A JP H05136452 A JPH05136452 A JP H05136452A
Authority
JP
Japan
Prior art keywords
light
emitting diode
insulating tube
light emitting
semiconductor relay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27877591A
Other languages
Japanese (ja)
Inventor
Masaaki Nakamura
政昭 仲村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP27877591A priority Critical patent/JPH05136452A/en
Publication of JPH05136452A publication Critical patent/JPH05136452A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To transmit a signal inputted to a light emitting diode to a photovoltaic device efficiently by a method wherein a light transmission path with little light loss is formed between the light emitting diode and the photovoltaic device which are so provided as to face each other for photocoupling. CONSTITUTION:A light emitting diode 1 which is mounted on a first lead frame 2 on an input side and the light receiving part of a photovoltaic device 4 which is mounted on a second lead frame 6 on an output side and drives a MOS-FET device 5 which operates as a switching device are linked with each other with a light shielding insulating tube 3 whose outer wall is so treated as not to transmit a light and the inside of the light shielding insulating tube 3 is filled with transparent insulating filling material 7. With this constitution, light leakage from the inside of the light shielding insulating tube 3 can be avoided and, further, a light transmission path whose shape is fixed and which has little light loss can be formed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体リレーに関し、特
に高精度,高信頼の特性を有する半導体リレーの構成,
およびその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor relay, and more particularly to the structure of a semiconductor relay having high accuracy and high reliability.
And a manufacturing method thereof.

【0002】[0002]

【従来の技術】従来、半導体リレーは図3に示すように
構成されていた。図3において,従来の半導体リレー
は、入力電流に応じて発光する発光ダイオード31と,
発光ダイオードから発せられた光を受光して起電力を発
生する光起電力素子32と,光起電力素子の起電力で動
作するMOSFET素子33とから構成される半導体リ
レーの本体を備え、発光ダイオード31を搭載する第1
のリードフレーム34と,MOSFET素子,および光
起電力素子32を搭載する第2のリードフレーム35と
を対向して配置して構成されていた。この半導体リレー
においては、光起電力素子32と発光ダイオード31と
の上をそれぞれ透明な充填材36で覆い,対向構造に組
み立ててから充填材36を連結させた後、外壁を不透明
樹脂37で覆うことによって光経路を形成していた。
2. Description of the Related Art Conventionally, a semiconductor relay has been constructed as shown in FIG. Referring to FIG. 3, the conventional semiconductor relay includes a light emitting diode 31 that emits light according to an input current,
A light emitting diode is provided which includes a main body of a semiconductor relay including a photovoltaic element 32 which receives light emitted from a light emitting diode to generate an electromotive force and a MOSFET element 33 which operates by the electromotive force of the photovoltaic element. 1st with 31
The lead frame 34 and the second lead frame 35 on which the MOSFET element and the photovoltaic element 32 are mounted face each other. In this semiconductor relay, the photovoltaic element 32 and the light emitting diode 31 are respectively covered with a transparent filling material 36, assembled to face each other, the filling material 36 is connected, and then the outer wall is covered with an opaque resin 37. This formed the optical path.

【0003】[0003]

【発明が解決しようとする課題】解決しようとする問題
点は、光起電力素子と発光ダイオードとの上に,透明な
充填材を充填し,対向構造に連結する工程において、充
填材の流れ出しや、連結部の光経路の細り等が発生しや
すい点である。また、充填材で形成された連結部の外壁
を不透明樹脂で覆う際に、ピンホール等が発生して光漏
れを引き起こし、光伝達効率が低下する点である。
The problem to be solved is to fill the transparent filler on the photovoltaic element and the light emitting diode, and to prevent the filler from flowing out in the process of connecting to the opposing structure. The point is that the optical path of the connecting portion is likely to be narrowed. In addition, when the outer wall of the connecting portion formed of the filling material is covered with an opaque resin, a pinhole or the like is generated to cause light leakage, and the light transmission efficiency is reduced.

【0004】[0004]

【課題を解決するための手段】入力電流で発光する発光
ダイオードと,発光ダイオードから発せられた光を受光
して起電力を発生する光起電力素子と,光起電力素子の
起電力で動作するMOSFET素子とから構成される半
導体リレーの本体を備え、発光ダイオードを第1のリー
ドフレームに搭載し、MOSFET素子,および光起電
力素子を第2のリードフレームに搭載して、それぞれ第
1および第2のリードフレームが対向構造になるように
半導体リレーを構成する際に、光起電力素子の受光部上
に外壁に光遮へい加工を施した絶縁性のチューブを予め
シリコン樹脂系接着剤で固定しておき、そのチューブの
開口部に発光ダイオードが挿入されるようにリードフレ
ームを組み立てた後、遮光性絶縁チューブの内部に、発
光ダイオードを搭載した第1のリードフレームの側の間
隙より、透明な絶縁性充填材を充填することによって、
形状が安定化し,かつ,光漏れのない光伝達路が形成さ
れることを特徴とする。
A light emitting diode that emits light with an input current, a photovoltaic element that receives light emitted from the light emitting diode to generate electromotive force, and operates with electromotive force of the photovoltaic element A semiconductor relay body including a MOSFET element is provided, a light emitting diode is mounted on a first lead frame, and a MOSFET element and a photovoltaic element are mounted on a second lead frame. When configuring the semiconductor relay so that the lead frame of 2 has an opposing structure, an insulative tube with light shielding on the outer wall is fixed in advance on the light receiving part of the photovoltaic element with a silicone resin adhesive. After assembling the lead frame so that the light emitting diode is inserted into the opening of the tube, mount the light emitting diode inside the light-shielding insulating tube. Than the gap of the first side of the lead frame, by filling a transparent insulating filling material,
The feature is that the shape is stabilized and a light transmission path without light leakage is formed.

【0005】[0005]

【実施例】次に、本発明について図面を参照して説明す
る。図1は、本発明による半導体リレーの第1の実施例
を示す模式図である。図1において、1は発光ダイオー
ド,2は第1のリードフレーム,3は遮光性絶縁チュー
ブ,4は光起電力素子,5はMOSFET素子,6は第
2のリードフレーム,7は絶縁性充填剤,8はモールド
成形材である。図1において、発光ダイオード1は第1
のリードフレーム2上に搭載され,一方,受光部に遮光
性絶縁チューブ3を接続した光起電力素子4と,MOS
FET素子5とは、第2のリードフレーム6上に搭載さ
れている。発光ダイオード1が遮光性絶縁チューブ3の
内部に挿入されているように、第1および第2のリード
フレーム2,6を対向構造に固定した後,遮光性絶縁チ
ューブ3内へ光学的に透明な絶縁性充填材7を充填す
る。これをモールド成形材7でモールディング成形し、
リードフレームを切断して半導体リレーとして完成す
る。この半導体リレーは、第1のリードフレーム2の側
に形成された入力端子への入力信号により、発光ダイオ
ード1が発光し、この光が遮光性絶縁チューブ3の内部
の絶縁性充填材7内を透過し、光起電力素子4の受光部
に照射される。受光した光起電力素子4は光起電力を発
生し、スイッチ素子としてのMOSFET素子4を駆動
してスイッチ動作させる。これにより、第2のリードフ
レーム5に形成された一対の出力端子間が閉で、リレー
としてON状態となる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing a first embodiment of a semiconductor relay according to the present invention. In FIG. 1, 1 is a light emitting diode, 2 is a first lead frame, 3 is a light-shielding insulating tube, 4 is a photovoltaic element, 5 is a MOSFET element, 6 is a second lead frame, and 7 is an insulating filler. , 8 are molding materials. In FIG. 1, the light emitting diode 1 is a first
Mounted on the lead frame 2 of the above, and on the other hand, a photovoltaic element 4 in which a light-shielding insulating tube 3 is connected to the light receiving part, and a MOS
The FET element 5 is mounted on the second lead frame 6. After fixing the first and second lead frames 2 and 6 in a facing structure so that the light emitting diode 1 is inserted inside the light-shielding insulating tube 3, the light-shielding insulating tube 3 is optically transparent. The insulating filler 7 is filled. This is molded with the molding material 7,
The lead frame is cut to complete a semiconductor relay. In this semiconductor relay, the light emitting diode 1 emits light in response to an input signal to an input terminal formed on the side of the first lead frame 2, and this light passes through the inside of the insulating filler 7 inside the light shielding insulating tube 3. The light passes through and is applied to the light receiving portion of the photovoltaic element 4. The received photovoltaic element 4 generates a photovoltaic force, and drives the MOSFET element 4 as a switching element to perform a switching operation. As a result, the pair of output terminals formed on the second lead frame 5 is closed, and the relay is turned on.

【0006】次に、本発明による半導体リレーの第2の
実施例を説明する。図2は、本発明による半導体リレー
の第2の実施例を示す模式図である。図2において、2
1は発光ダイオード,22は第1のリードフレーム,2
3は遮光性絶縁チューブ,24は光起電力素子,25は
MOSFET素子,26は第2のリードフレーム,27
は絶縁性充填剤,28はモールド成形材である。図2に
おいて、第1および第2のリードフレーム22,26に
それぞれ搭載された発光ダイオード21と,光起電力素
子24との間は、第1の実施例と同様に,遮光性絶縁チ
ューブ23と絶縁性充填材27とによって形成された光
経路によって接続されている。本実施例では、遮光性絶
縁チューブ23の外壁には、予め突起が設けてあり、第
1および第2のリードフレーム22,26間に高電圧が
印加された場合、最もリークの発生しやすい遮光性絶縁
チューブ23とモールド成形材28との界面,つまり遮
光性絶縁チューブ23の沿面距離が長くなるようにして
ある。
Next, a second embodiment of the semiconductor relay according to the present invention will be described. FIG. 2 is a schematic diagram showing a second embodiment of the semiconductor relay according to the present invention. In FIG. 2, 2
1 is a light emitting diode, 22 is a first lead frame, 2
3 is a light-shielding insulating tube, 24 is a photovoltaic element, 25 is a MOSFET element, 26 is a second lead frame, 27
Is an insulating filler, and 28 is a molding material. In FIG. 2, between the light emitting diode 21 mounted on each of the first and second lead frames 22 and 26 and the photovoltaic element 24, a light-shielding insulating tube 23 is provided as in the first embodiment. They are connected by an optical path formed by the insulating filling material 27. In this embodiment, the outer wall of the light-shielding insulating tube 23 is provided with protrusions in advance, and light leakage is most likely to occur when a high voltage is applied between the first and second lead frames 22 and 26. The interface between the electrically insulating tube 23 and the molding material 28, that is, the creeping distance of the light shielding insulating tube 23 is increased.

【0007】[0007]

【発明の効果】以上説明したように本発明は、半導体リ
レーにおいて入出力端子を形成する第1および第2のリ
ードフレーム間の光経路を,遮光性絶縁チューブと絶縁
性充填材で形成することによって、光伝達経路の細り
や、不透明樹脂のコーティング不良による光伝達効率の
低下が発生しない利点がある。また、予め遮光性絶縁チ
ューブの外壁に突起を設けておき、沿面距離を長くする
ことにより、入出力端子を形成する第1および第2のリ
ードフレーム間の絶縁性を高める効果がある。
As described above, according to the present invention, the light path between the first and second lead frames forming the input / output terminals in the semiconductor relay is formed of the light-shielding insulating tube and the insulating filler. Therefore, there is an advantage that the light transmission path does not become thin and the light transmission efficiency does not decrease due to defective coating of the opaque resin. Further, by providing a protrusion on the outer wall of the light-shielding insulating tube in advance and increasing the creepage distance, there is an effect of enhancing the insulating property between the first and second lead frames forming the input / output terminals.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による半導体リレーの第1の実施例を示
す模式図である。
FIG. 1 is a schematic view showing a first embodiment of a semiconductor relay according to the present invention.

【図2】本発明による半導体リレーの第2の実施例を示
す模式図である。
FIG. 2 is a schematic diagram showing a second embodiment of the semiconductor relay according to the present invention.

【図3】従来の半導体リレーの一例を示す模式図であ
る。
FIG. 3 is a schematic view showing an example of a conventional semiconductor relay.

【符号の説明】[Explanation of symbols]

1,21,31 発光ダイオード 2,22,34 第1のリードフレーム 3,23 遮光性絶縁チューブ 4,24,32 光起電力素子 5,25,33 MOSFET素子 6,26,35 第2のリードフレーム 7,27 絶縁性充填材 8,28,38 モールド成形材 36 充填材 37 不透明樹脂 1,21,31 Light emitting diode 2,22,34 First lead frame 3,23 Light-shielding insulating tube 4,24,32 Photovoltaic device 5,25,33 MOSFET device 6,26,35 Second lead frame 7,27 Insulating filler 8,28,38 Molding material 36 Filler 37 Opaque resin

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 入力電流に応じて発光する発光ダイオー
ドと,前記発光ダイオードから発せられた光を受光し,
起電力を発生する光起電力素子と,前記光起電力素子の
起電力でスイッチ動作するMOSFET素子とから構成
され,かつ,前記発光ダイオードを搭載する第1のリー
ドフレームと,前記MOSFET素子,および前記光起
電力素子を搭載する第2のリードフレームとを対向させ
て構成した半導体リレーにおいて,前記光起電力素子と
前記発光ダイオードとの間を光学的に連結する遮光性絶
縁チューブと,前記遮光性絶縁チューブ内を充填する絶
縁性充填材とによって光伝達路を形成した半導体リレ
ー。
1. A light emitting diode that emits light in response to an input current, and receives light emitted from the light emitting diode,
A first lead frame including a photovoltaic element that generates an electromotive force and a MOSFET element that performs a switch operation by the electromotive force of the photovoltaic element, and mounting the light emitting diode, the MOSFET element, and In a semiconductor relay configured to face a second lead frame on which the photovoltaic element is mounted, a light-shielding insulating tube that optically connects the photovoltaic element and the light-emitting diode, and the light-shielding A semiconductor relay in which a light transmission path is formed by an insulating filler that fills the inside of a flexible insulating tube.
【請求項2】 前記遮光絶縁チューブは前記発光ダイオ
ードからの光を漏れなく前記光起電力素子に伝達できる
ように遮光した構造とし,前記絶縁性充填材は光学的に
透明な性質を有するものである請求項1記載の半導体リ
レー。
2. The light-blocking insulating tube has a structure that blocks light from the light-emitting diode to be transmitted to the photovoltaic element without leaking, and the insulating filler has an optically transparent property. A semiconductor relay according to claim 1.
【請求項3】 前記遮光性絶縁チューブは,外壁が滑ら
かな形状である請求項2記載の半導体リレー。
3. The semiconductor relay according to claim 2, wherein the light-shielding insulating tube has a smooth outer wall.
【請求項4】 前記遮光性絶縁チューブは,外壁が突起
を有する形状である請求項2記載の半導体リレー。
4. The semiconductor relay according to claim 2, wherein an outer wall of the light-shielding insulating tube has a protrusion.
【請求項5】 入力電流に応じて発光する発光ダイオー
ドと,前記発光ダイオードから発せられた光を受光し,
起電力を発生する光起電力素子と,前記光起電力素子の
起電力でスイッチ動作するMOSFET素子とから構成
され,かつ,前記発光ダイオードを搭載する第1のリー
ドフレームと,前記MOSFET素子,および前記光起
電力素子を搭載する第2のリードフレームとを対向させ
て構成した半導体リレーにおいて、 前記光起電力素子と前記発光ダイオードとの間を遮光性
絶縁チューブで光学的に連結し,前記遮光性絶縁チュー
ブ内を光学的に透明な絶縁性充填材で充填することによ
り光伝達路を形成して成り立つ半導体リレーの製造方
法。
5. A light emitting diode which emits light in response to an input current, and receives light emitted from the light emitting diode,
A first lead frame including a photovoltaic element that generates an electromotive force and a MOSFET element that performs a switch operation by the electromotive force of the photovoltaic element, and mounting the light emitting diode, the MOSFET element, and In a semiconductor relay configured to face a second lead frame on which the photovoltaic element is mounted, the photovoltaic element and the light emitting diode are optically connected by a light blocking insulating tube, and the light blocking is performed. A method of manufacturing a semiconductor relay, which comprises an optical transmission path formed by filling an optically insulating tube with an optically transparent insulating filler.
JP27877591A 1991-09-30 1991-09-30 Semiconductor relay and its manufacture Pending JPH05136452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27877591A JPH05136452A (en) 1991-09-30 1991-09-30 Semiconductor relay and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27877591A JPH05136452A (en) 1991-09-30 1991-09-30 Semiconductor relay and its manufacture

Publications (1)

Publication Number Publication Date
JPH05136452A true JPH05136452A (en) 1993-06-01

Family

ID=17602009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27877591A Pending JPH05136452A (en) 1991-09-30 1991-09-30 Semiconductor relay and its manufacture

Country Status (1)

Country Link
JP (1) JPH05136452A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373078B1 (en) * 1999-09-28 2002-04-16 International Rectifier Corp. Microelectronic relay with upset and downset lead frames
US7009166B2 (en) * 2002-03-26 2006-03-07 Sharp Kabushiki Kaisha Photocoupler, method for producing the same, and electronic device equipped with the photocoupler
EP2469617A3 (en) * 2010-12-22 2013-04-17 PSI Technologies Inc. Scalable heat dissipating microelectronic integration platform (SHDMIP) for lighting solutions and method of manufacturing thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373078B1 (en) * 1999-09-28 2002-04-16 International Rectifier Corp. Microelectronic relay with upset and downset lead frames
US7009166B2 (en) * 2002-03-26 2006-03-07 Sharp Kabushiki Kaisha Photocoupler, method for producing the same, and electronic device equipped with the photocoupler
EP2469617A3 (en) * 2010-12-22 2013-04-17 PSI Technologies Inc. Scalable heat dissipating microelectronic integration platform (SHDMIP) for lighting solutions and method of manufacturing thereof
US8669580B2 (en) 2010-12-22 2014-03-11 Psi Technologies, Inc. Scalable heat dissipating microelectronic integration platform (SHDMIP) for lighting solutions and method of manufacturing thereof

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