JPH05135396A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPH05135396A
JPH05135396A JP3326439A JP32643991A JPH05135396A JP H05135396 A JPH05135396 A JP H05135396A JP 3326439 A JP3326439 A JP 3326439A JP 32643991 A JP32643991 A JP 32643991A JP H05135396 A JPH05135396 A JP H05135396A
Authority
JP
Japan
Prior art keywords
laser
semiconductor laser
face
optical system
diagonally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3326439A
Other languages
Japanese (ja)
Inventor
Tomoji Uchida
智士 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP3326439A priority Critical patent/JPH05135396A/en
Publication of JPH05135396A publication Critical patent/JPH05135396A/en
Priority to US08/161,435 priority patent/US5396481A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique

Landscapes

  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To surely prevent a return noise without applying a coating for preventing reflection, etc., by using a semiconductor laser formed with a stripe diagonally with the laser output end face, thereby constituting a laser pickup device. CONSTITUTION:A laser pickup 1 is constituted by using a semiconductor laser 2 formed with a stripe 3 diagonally with the laser output end face. Since the laser beam emitted from the semiconductor laser 2 of the laser pickup 1 is diagonally emitted from the end face, the reflected light returning by being reflected with an optical system 4 is made incident diagonally on the end face of the semiconductor laser 2. Then, the light reflected from the end face of the semiconductor laser 2 does not pass the same optical path and is not made incident again on the optical system 4. As a result, the return noise is surely prevented without applying coating for preventing reflection, etc., on the end face of the semiconductor laser 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はレーザピックアップに用
いられる半導体レーザおよびそれを用いてなるレーザピ
ックアップ装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser used in a laser pickup and a laser pickup device using the semiconductor laser.

【0002】[0002]

【従来の技術】従来よりレーザピックアップ装置に、図
2に示すようなレーザピックアップ10が用いられてい
る。かかるレーザピックアップ10に用いられる半導体
レーザ11のストライプ12は、図3に示すごとくレー
ザ出力端面に垂直に形成されている。この様に構成され
た半導体レーザ11から光学系13に発射されたレーザ
光線は、回折格子14により主ビームP0と補助ビーム
1、P2の3つのビームに回折され、ビームスプリッタ
15、対物レンズ16を経て、ディスクDに入射する。
このディスクDに入射したビームは、ディスクDにより
反射され、ビームP0´、P1´、P2´となって元の光
路を逆に戻りビームスプリッタ15に到達する。これら
の戻りビームP0´、P1´、P2´の大部分は、ビーム
スプリッタ15により反射され、凹レンズ17、シリン
ドリカルレンズ18を経て、フォトセンサ19に至る。
2. Description of the Related Art Conventionally, a laser pickup 10 as shown in FIG. 2 has been used in a laser pickup device. The stripe 12 of the semiconductor laser 11 used in the laser pickup 10 is formed perpendicular to the laser output end face as shown in FIG. The laser beam emitted from the semiconductor laser 11 thus configured to the optical system 13 is diffracted by the diffraction grating 14 into three beams of the main beam P 0 and the auxiliary beams P 1 and P 2 , and the beam splitter 15 and the objective The light enters the disk D through the lens 16.
The beam incident on the disk D is reflected by the disk D and becomes beams P 0 ′, P 1 ′, and P 2 ′, which reverse the original optical path and reach the beam splitter 15. Most of these return beams P 0 ′, P 1 ′, and P 2 ′ are reflected by the beam splitter 15, pass through the concave lens 17 and the cylindrical lens 18, and reach the photosensor 19.

【0003】しかるに、戻りビームP0´、P1´、P2
´の一部は、ビームスプリッタ15を透過して、半導体
レーザ11に戻ってくる。これらの透過光は、半導体レ
ーザ11の端面により反射されて、再び光学系13に戻
る。このように半導体レーザ11と光学系13との間に
複合共振器が形成されると雑音(以下、戻り雑音とい
う)発生の原因となる。このため半導体レーザ11の端
面の反射率を小さくしたり、端面に低反射率の膜をコー
ティングしたり、あるいは半導体レーザ11の端面をエ
ッチングして形状を変化させたりして、端面再反射光量
の低減化を図っている。なお、図において矢印は光路を
示す。
However, the return beams P 0 ′, P 1 ′, P 2
A part of ′ passes through the beam splitter 15 and returns to the semiconductor laser 11. These transmitted lights are reflected by the end surface of the semiconductor laser 11 and return to the optical system 13 again. When the composite resonator is formed between the semiconductor laser 11 and the optical system 13 as described above, it causes noise (hereinafter referred to as return noise). For this reason, the reflectivity of the end face of the semiconductor laser 11 is reduced, the end face is coated with a film having a low reflectivity, or the end face of the semiconductor laser 11 is etched to change its shape, so that the end face re-reflection light amount We are trying to reduce it. In the figure, the arrow indicates the optical path.

【0004】しかしながら、この様な従来の手段では端
面再反射光量を低減できても皆無にすることはできない
ため、戻り雑音を皆無にすることはできない。
However, such conventional means cannot reduce the amount of re-reflected light on the end face, but cannot eliminate the return noise.

【0005】[0005]

【発明が解決しようとする課題】本発明はかかる従来技
術の問題点に鑑みなされたものであって、端面再反射光
量を実質上ゼロとすることにより、戻り雑音を確実に防
止することができる半導体レーザおよびそれを用いてな
るレーザピックアップ装置を提供することを目的とす
る。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and by setting the end face re-reflected light amount to substantially zero, return noise can be reliably prevented. An object of the present invention is to provide a semiconductor laser and a laser pickup device using the same.

【0006】[0006]

【課題を解決するための手段】本発明の半導体レーザ
は、レーザピックアップに用いられる半導体レーザであ
って、ストライプがレーザ出力側端面に対して斜交して
形成されていることを特徴としている。
The semiconductor laser of the present invention is a semiconductor laser used in a laser pickup, and is characterized in that stripes are formed obliquely with respect to the laser output side end face.

【0007】また、本発明のレーザピックアップ装置
は、前記半導体レーザを用いてなることを特徴としてい
る。
A laser pickup device of the present invention is characterized by using the semiconductor laser.

【0008】[0008]

【作用】本発明の半導体レーザにおいては、ストライプ
がレーザ出力端面に対して斜交して形成されているの
で、光学系から反射されてきた光がレーザの出力端面で
反射して再び光学系に入射することがないので、戻り雑
音を確実に防止すことができる。
In the semiconductor laser of the present invention, since the stripes are formed obliquely with respect to the laser output end face, the light reflected from the optical system is reflected at the laser output end face and again enters the optical system. Since it does not enter, return noise can be reliably prevented.

【0009】[0009]

【実施例】以下、添付図面を参照しながら本発明の一実
施例について説明するが、本発明はかかる実施例のみに
限定されるものではない。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings, but the present invention is not limited to such embodiment.

【0010】図1は本発明の一実施例の説明図である。
図において、1はレーザピックアップ、2は半導体レー
ザ、3はストライプ、4は光学系を示す。また、矢印は
光路を示す。
FIG. 1 is an explanatory diagram of an embodiment of the present invention.
In the figure, 1 is a laser pickup, 2 is a semiconductor laser, 3 is a stripe, and 4 is an optical system. The arrow indicates the optical path.

【0011】半導体レーザ2は、ストライプ3が図示の
ごとくレーザ出力端面に斜交して形成されている他は従
来の半導体レーザと同様であるので、その構成の詳細な
説明は省略する。また、光学系4も従来のものと同様で
あるので、その構成の詳細な説明も省略する。
The semiconductor laser 2 is the same as the conventional semiconductor laser except that the stripes 3 are obliquely formed on the laser output end face as shown in the figure, and therefore the detailed description of the structure is omitted. Further, since the optical system 4 is also the same as the conventional one, detailed description of its configuration is omitted.

【0012】この様に構成されたレーザピックアップ1
においては、半導体レーザ2から発射されるレーザ光線
は端面から斜めに出るので、光学系4により反射されて
戻ってくる反射光は半導体レーザの端面に斜めに入射す
る。したがって、半導体レーザ端面から反射される光は
同じ光路を通ることはなく、光学系4に再び入射するこ
ともない(図1参照)。
The laser pickup 1 thus constructed
In the above, since the laser beam emitted from the semiconductor laser 2 is obliquely emitted from the end face, the reflected light reflected and returned by the optical system 4 is obliquely incident on the end face of the semiconductor laser. Therefore, the light reflected from the end face of the semiconductor laser does not pass through the same optical path and does not enter the optical system 4 again (see FIG. 1).

【0013】[0013]

【発明の効果】以上説明したように、本発明においては
光学系から反射された光が再び光学系に入射することが
ないので、半導体レーザ端面に反射防止用コーティング
等を施すことなく戻り雑音を確実に防止することができ
る。
As described above, in the present invention, since the light reflected from the optical system does not enter the optical system again, the return noise is eliminated without applying an antireflection coating or the like to the end face of the semiconductor laser. It can be surely prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の光路説明図である。FIG. 1 is an explanatory diagram of an optical path according to an embodiment of the present invention.

【図2】従来のレーザピックアップの概略図である。FIG. 2 is a schematic view of a conventional laser pickup.

【図3】従来のレーザピックアップの光路説明図であ
る。
FIG. 3 is an optical path diagram of a conventional laser pickup.

【符号の説明】[Explanation of symbols]

1 レーザピックアップ 2 半導体レーザ 3 ストライプ 4 光学系 1 Laser pickup 2 Semiconductor laser 3 Stripe 4 Optical system

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 レーザピックアップに用いられる半導体
レーザであって、ストライプがレーザ出力端面に対して
斜交して形成されていることを特徴とする半導体レー
ザ。
1. A semiconductor laser used in a laser pickup, wherein a stripe is formed obliquely with respect to a laser output end face.
【請求項2】 請求項1記載の半導体レーザを用いてな
ることを特徴とするレーザピックアップ装置。
2. A laser pickup device comprising the semiconductor laser according to claim 1.
JP3326439A 1991-11-13 1991-11-13 Semiconductor laser Withdrawn JPH05135396A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3326439A JPH05135396A (en) 1991-11-13 1991-11-13 Semiconductor laser
US08/161,435 US5396481A (en) 1991-11-13 1993-12-06 Semiconductor laser device which emits inclined laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3326439A JPH05135396A (en) 1991-11-13 1991-11-13 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPH05135396A true JPH05135396A (en) 1993-06-01

Family

ID=18187819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3326439A Withdrawn JPH05135396A (en) 1991-11-13 1991-11-13 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPH05135396A (en)

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990204