JPH07159660A - Light emitting module for optical communication - Google Patents

Light emitting module for optical communication

Info

Publication number
JPH07159660A
JPH07159660A JP34143793A JP34143793A JPH07159660A JP H07159660 A JPH07159660 A JP H07159660A JP 34143793 A JP34143793 A JP 34143793A JP 34143793 A JP34143793 A JP 34143793A JP H07159660 A JPH07159660 A JP H07159660A
Authority
JP
Japan
Prior art keywords
optical fiber
light
semiconductor laser
laser
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP34143793A
Other languages
Japanese (ja)
Inventor
Ken Okochi
研 大河内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP34143793A priority Critical patent/JPH07159660A/en
Publication of JPH07159660A publication Critical patent/JPH07159660A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To provide a light emitting module capable of dealing with noise by return light with inexpensive and simple constitution by providing one surface of a lens or half surface of both surfaces with light shielding parts. CONSTITUTION:A reflection film 21 which is the light shielding part fo shield about upper half of the laser beam from a semiconductor laser 1 is formed by vapor deposition, etc., on the surface of the aspherical lens 20 between the semiconductor laser 1 and an optical fiber 3. The laser beam emitted from the semiconductor laser 1 is condensed by the aspherical lens 20 and is made incident on the optical fiber 3. The upper half of the laser beam by the reflection film 21 is reflected and is not made incident on the optical fiber 3 so that the laser of about lower half part arrives at the optical fiber 3. Consequently, the incidence is eventually the same as the incidence on the optical fiber end face 3a from diagonally on the lower side. The reflected light 22 reflected by the optical fiber end face 3a returns to the upper half part of the aspherical lens face 20 but is shielded by the reflection film 21 formed thereon and is no longer returned to the semiconductor laser 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光ファイバを用いた光通
信などの光結合装置に関し、特に半導体レーザと光ファ
イバとの光結合の発光モジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling device for optical communication using an optical fiber, and more particularly to a light emitting module for optically coupling a semiconductor laser and an optical fiber.

【0002】[0002]

【従来の技術】図3は従来例を示すもので、半導体レー
ザ1とレンズ2および光ファイバ3からなる従来の発光
モジュールでは、半導体レーザ1からのレーザ光が光フ
ァイバ3に入射する際、屈折率の違いから入射レーザ光
の数%が光ファイバ3の端面3aで反射されてしまう。
その反射光4はそのままレンズ2を通り半導体レーザ1
に戻る。この結果、半導体レーザ1の発振状態が極めて
不安定になり、ノイズの増加、電流−光出力特性の変化
など、静動特性両面の変化が生ずる。光ファイバ通信に
おいては、この特性変化は直接変調特性の悪化を中心に
致命的な障害となる。
2. Description of the Related Art FIG. 3 shows a conventional example. In a conventional light emitting module composed of a semiconductor laser 1, a lens 2 and an optical fiber 3, when the laser light from the semiconductor laser 1 enters the optical fiber 3, it is refracted. Due to the difference in the ratio, a few% of the incident laser light is reflected by the end face 3a of the optical fiber 3.
The reflected light 4 directly passes through the lens 2 and the semiconductor laser 1
Return to. As a result, the oscillation state of the semiconductor laser 1 becomes extremely unstable, causing changes in both static and dynamic characteristics such as increased noise and changes in current-optical output characteristics. In optical fiber communication, this characteristic change is a fatal obstacle mainly due to deterioration of direct modulation characteristic.

【0003】この対策としては図4に示すように、光ア
イソレータを使用する方法がある。これは、半導体レー
ザ1からのレーザ光をコリメートレンズ7を用いて一旦
平行光にし、光アイソレータ9を通して再びコリメート
レンズ8で集光させて光ファイバ3へ入射させる構成と
したものである。このようにすると、光ファイバ3の端
面3aからの反射光10は、コリメートレンズ8を通り
光アイソレータ9に入射されるが、この光アイソレータ
9は一方向からの光は通過させるがその逆からの光は通
過させない性質を持つもので、半導体レーザ1に戻り光
11を到達させない作用をし、反射による戻り光を防止
している。
As a countermeasure against this, there is a method of using an optical isolator as shown in FIG. This is a configuration in which the laser light from the semiconductor laser 1 is once made into parallel light using the collimator lens 7, is again condensed by the collimator lens 8 through the optical isolator 9, and is incident on the optical fiber 3. In this way, the reflected light 10 from the end face 3a of the optical fiber 3 passes through the collimator lens 8 and is incident on the optical isolator 9. The optical isolator 9 allows the light from one direction to pass but the light from the opposite direction. It has a property of not allowing light to pass therethrough, acts to prevent the return light 11 from reaching the semiconductor laser 1, and prevents the return light due to reflection.

【0004】また、図5に示すように、光ファイバの端
面を斜めにカットした斜めカットファイバ12を用いる
方法がある。この斜めカットファイバ12の端面12a
にレーザ光を斜めから入射させて結合効率を損なうこと
なく、且つ斜めカットファイバ端面12aからの反射光
13が半導体レーザ1に戻らないようにしている。
Further, as shown in FIG. 5, there is a method of using an oblique cut fiber 12 in which the end face of the optical fiber is obliquely cut. The end face 12a of this oblique cut fiber 12
The laser light is obliquely incident on the optical fiber 1 and the coupling efficiency is not impaired, and the reflected light 13 from the end face 12a of the oblique cut fiber is prevented from returning to the semiconductor laser 1.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、光アイ
ソレータは高価であるし、斜めカットファイバの使用は
レーザ光やレンズとの光軸合わせが面倒で、機構的にも
複雑となる。
However, the optical isolator is expensive, and the use of the oblique cut fiber complicates the optical axis alignment with the laser beam and the lens, and the mechanism becomes complicated.

【0006】そこで本発明は、上記これらの課題を解消
するためになされたもので、安価でしかも簡単な構成で
戻り光によるノイズを対策できる発光モジュールを提供
することを目的としている。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a light emitting module which is inexpensive and has a simple structure and which can prevent noise due to returning light.

【0007】[0007]

【課題を解決するための手段】本発明は、レンズの片面
もしくは両面の半面に遮光部を設けたことを特徴とする
ものである。
The present invention is characterized in that a light-shielding portion is provided on one or both half surfaces of a lens.

【0008】[0008]

【作用】本発明では、レンズの半面に遮光部を設けたた
め、半導体レーザからのレーザ光の約半面分が光ファイ
バに斜めに入射することになり、光ファイバの端面から
の反射光はレンズの遮光部に照射して反射されることに
なり、半導体レーザに戻らなくなる。
In the present invention, since the light shielding portion is provided on the half surface of the lens, about half of the laser light from the semiconductor laser is obliquely incident on the optical fiber, and the reflected light from the end surface of the optical fiber is reflected by the lens. The light will be reflected by the light-shielding portion and will not return to the semiconductor laser.

【0009】[0009]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1は光通信用発光モジュールの概略構成図で、
図2は反射膜が形成された非球面レンズを示す図であ
る。図に示すように、半導体レーザ1と光ファイバ3間
の非球面レンズ20の表面に、半導体レーザ1からのレ
ーザ光の約上半分を遮る遮光部の反射膜21を蒸着等に
より形成してある。このようにすることにより、半導体
レーザ1から発せられたレーザ光は非球面レンズ20で
集光されて光ファイバ3に入射されるが、この反射膜2
1によりレーザ光の上半分は反射されて光ファイバ3に
は入射されず、約下半分のレーザ光が光ファイバ3に到
達する。この結果、光ファイバ端面3aに対しては下側
の斜めから入射することと同じになり、光ファイバ端面
3aで反射された反射光22は、非球面レンズ20の上
半分側に戻ってくるが、形成してある反射膜21により
遮られて半導体レーザ1に戻ることはない。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a light emitting module for optical communication.
FIG. 2 is a diagram showing an aspherical lens having a reflective film formed thereon. As shown in the figure, on the surface of the aspherical lens 20 between the semiconductor laser 1 and the optical fiber 3, a reflection film 21 of a light shielding portion that blocks approximately the upper half of the laser light from the semiconductor laser 1 is formed by vapor deposition or the like. . By doing so, the laser light emitted from the semiconductor laser 1 is condensed by the aspherical lens 20 and is incident on the optical fiber 3.
The upper half of the laser light is reflected by 1 and is not incident on the optical fiber 3, and about the lower half of the laser light reaches the optical fiber 3. As a result, the light is incident on the optical fiber end face 3a obliquely downward, and the reflected light 22 reflected by the optical fiber end face 3a returns to the upper half side of the aspherical lens 20. , And is not blocked by the formed reflection film 21 and returns to the semiconductor laser 1.

【0010】この非球面レンズ20に形成した反射膜2
1は、図2に示すように上半分(約50%)に形成して
あるが、この反射膜21の範囲は光ファイバ3への入射
パワーと半導体レーザ1の出力安定性等の兼ね合いによ
り、パワーが必要で若干出力安定性を犠牲にできる場合
には40%ぐらいに少なくしたり、逆に伝送品質を問題
にする場合にはできるだけノイズのない状態にするため
に60%ぐらいに大きくするというように、状況により
反射膜21の範囲を設定すると効果的である。
A reflective film 2 formed on the aspherical lens 20.
2 is formed in the upper half (about 50%) as shown in FIG. 2, but the range of the reflection film 21 depends on the balance between the incident power to the optical fiber 3 and the output stability of the semiconductor laser 1. If power is needed and output stability can be sacrificed a little, it will be reduced to about 40%, and conversely, if transmission quality is a problem, it will be increased to about 60% to make it as noise-free as possible. As described above, it is effective to set the range of the reflective film 21 depending on the situation.

【0011】そして、この遮光用の反射膜21は、光フ
ァイバ3側の非球面レンズ20の片面に形成してある
が、反対の面すなわち半導体レーザ1側の面でもよく、
また両面に形成してもよい。
Although the light-shielding reflection film 21 is formed on one surface of the aspherical lens 20 on the optical fiber 3 side, it may be on the opposite surface, that is, the surface on the semiconductor laser 1 side.
It may also be formed on both sides.

【0012】なお、半導体レーザ1のレーザ光の遮光部
を非球面レンズ20に形成した反射膜21だけでなく、
シート状の遮光部材を非球面レンズ20の表面に貼り付
けたり、半導体レーザ1もしくは光ファイバ3と非球面
レンズ20との間に挿入する構成でも同様の効果が得ら
れる。
It should be noted that not only the reflection film 21 formed on the aspherical lens 20 as the light shielding portion for the laser light of the semiconductor laser 1 but also
The same effect can be obtained by affixing a sheet-shaped light shielding member on the surface of the aspherical lens 20 or by inserting the light shielding member between the semiconductor laser 1 or the optical fiber 3 and the aspherical lens 20.

【0013】[0013]

【発明の効果】上述した本発明によれば、半導体レーザ
とレンズ系および光ファイバとの光軸をずらすことな
く、また特別な部品を使用することなく、レンズの上半
面に遮光部を形成して遮光するだけで光ファイバの入射
端面からの反射戻り光を半導体レーザに戻らないように
できる。
According to the present invention described above, the light shielding portion is formed on the upper half surface of the lens without shifting the optical axes of the semiconductor laser, the lens system and the optical fiber, and without using special parts. It is possible to prevent the reflected return light from the incident end face of the optical fiber from returning to the semiconductor laser simply by blocking the light.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す発光モジュールの概略構
成図である。
FIG. 1 is a schematic configuration diagram of a light emitting module showing an embodiment of the present invention.

【図2】図1のレンズに形成された反射膜を示す図であ
る。
FIG. 2 is a view showing a reflection film formed on the lens of FIG.

【図3】従来の発光モジュールの概略構成図である。FIG. 3 is a schematic configuration diagram of a conventional light emitting module.

【図4】従来の光アイソレータ使用の発光モジュールの
概略構成図である。
FIG. 4 is a schematic configuration diagram of a conventional light emitting module using an optical isolator.

【図5】従来の斜めカットファイバ使用の発光モジュー
ルの概略構成図である。
FIG. 5 is a schematic configuration diagram of a conventional light emitting module using a diagonal cut fiber.

【符号の説明】[Explanation of symbols]

1 半導体レーザ 3 光ファイバ 3a 光ファイバ端面 20 非球面レンズ 21 反射膜 22 反射光 1 Semiconductor Laser 3 Optical Fiber 3a Optical Fiber End Face 20 Aspherical Lens 21 Reflective Film 22 Reflected Light

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体レーザと、該半導体レーザから発
せられる光を光ファイバに集光させるためのレンズとか
らなる光通信用の発光モジュールにおいて、前記レンズ
の片面もしくは両面の半面に前記半導体レーザのレーザ
光を遮る遮光部を設けたことを特徴とする発光モジュー
ル。
1. A light-emitting module for optical communication, comprising a semiconductor laser and a lens for condensing light emitted from the semiconductor laser on an optical fiber, wherein one or both half surfaces of the lens are provided with the semiconductor laser. A light-emitting module comprising a light-shielding portion that blocks laser light.
JP34143793A 1993-12-10 1993-12-10 Light emitting module for optical communication Withdrawn JPH07159660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34143793A JPH07159660A (en) 1993-12-10 1993-12-10 Light emitting module for optical communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34143793A JPH07159660A (en) 1993-12-10 1993-12-10 Light emitting module for optical communication

Publications (1)

Publication Number Publication Date
JPH07159660A true JPH07159660A (en) 1995-06-23

Family

ID=18346075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34143793A Withdrawn JPH07159660A (en) 1993-12-10 1993-12-10 Light emitting module for optical communication

Country Status (1)

Country Link
JP (1) JPH07159660A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007225932A (en) * 2006-02-23 2007-09-06 Matsushita Electric Works Ltd Infrared communication module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007225932A (en) * 2006-02-23 2007-09-06 Matsushita Electric Works Ltd Infrared communication module

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20010306