JPH0513376B2 - - Google Patents
Info
- Publication number
- JPH0513376B2 JPH0513376B2 JP1946486A JP1946486A JPH0513376B2 JP H0513376 B2 JPH0513376 B2 JP H0513376B2 JP 1946486 A JP1946486 A JP 1946486A JP 1946486 A JP1946486 A JP 1946486A JP H0513376 B2 JPH0513376 B2 JP H0513376B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- contact hole
- dry etching
- film
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 93
- 238000005530 etching Methods 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 33
- 238000001020 plasma etching Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 238000001312 dry etching Methods 0.000 claims description 26
- 239000011229 interlayer Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000002250 progressing effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1946486A JPS62179120A (ja) | 1986-01-31 | 1986-01-31 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1946486A JPS62179120A (ja) | 1986-01-31 | 1986-01-31 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62179120A JPS62179120A (ja) | 1987-08-06 |
| JPH0513376B2 true JPH0513376B2 (enrdf_load_stackoverflow) | 1993-02-22 |
Family
ID=12000044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1946486A Granted JPS62179120A (ja) | 1986-01-31 | 1986-01-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62179120A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4640047B2 (ja) * | 2005-08-30 | 2011-03-02 | 沖電気工業株式会社 | エッチング方法、金属膜構造体の製造方法およびエッチング構造体 |
| CN104752192B (zh) * | 2013-12-31 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | 一种在半导体衬底表面制作斜面的方法 |
-
1986
- 1986-01-31 JP JP1946486A patent/JPS62179120A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62179120A (ja) | 1987-08-06 |
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