JPH0511074B2 - - Google Patents
Info
- Publication number
- JPH0511074B2 JPH0511074B2 JP23988087A JP23988087A JPH0511074B2 JP H0511074 B2 JPH0511074 B2 JP H0511074B2 JP 23988087 A JP23988087 A JP 23988087A JP 23988087 A JP23988087 A JP 23988087A JP H0511074 B2 JPH0511074 B2 JP H0511074B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible body
- holder
- crucible
- single crystal
- locking member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 53
- 239000002994 raw material Substances 0.000 claims description 28
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000002109 crystal growth method Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000010453 quartz Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012364 cultivation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23988087A JPS6483593A (en) | 1987-09-24 | 1987-09-24 | Apparatus for growing semiconductor single crystal |
| CA000568083A CA1305909C (en) | 1987-06-01 | 1988-05-30 | Apparatus and process for growing crystals of semiconductor materials |
| EP88108790A EP0293865B1 (en) | 1987-06-01 | 1988-06-01 | Apparatus and process for growing crystals of semiconductor materials |
| DE8888108790T DE3878990T2 (de) | 1987-06-01 | 1988-06-01 | Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien. |
| US07/201,018 US4936949A (en) | 1987-06-01 | 1988-06-01 | Czochraski process for growing crystals using double wall crucible |
| US07/527,887 US5009862A (en) | 1987-06-01 | 1990-05-23 | Apparatus and process for growing crystals of semiconductor materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23988087A JPS6483593A (en) | 1987-09-24 | 1987-09-24 | Apparatus for growing semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6483593A JPS6483593A (en) | 1989-03-29 |
| JPH0511074B2 true JPH0511074B2 (en, 2012) | 1993-02-12 |
Family
ID=17051254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23988087A Granted JPS6483593A (en) | 1987-06-01 | 1987-09-24 | Apparatus for growing semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6483593A (en, 2012) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02107587A (ja) * | 1988-10-13 | 1990-04-19 | Mitsubishi Metal Corp | 半導体単結晶育成装置 |
| JP4953702B2 (ja) * | 2006-06-19 | 2012-06-13 | 株式会社トクヤマ | チョクラルスキー法単結晶引き上げ装置 |
| CN112048758A (zh) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | 连续直拉单晶棒工艺 |
-
1987
- 1987-09-24 JP JP23988087A patent/JPS6483593A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6483593A (en) | 1989-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080212 Year of fee payment: 15 |