JPH05102227A - 半導体製造装置 - Google Patents

半導体製造装置

Info

Publication number
JPH05102227A
JPH05102227A JP25933091A JP25933091A JPH05102227A JP H05102227 A JPH05102227 A JP H05102227A JP 25933091 A JP25933091 A JP 25933091A JP 25933091 A JP25933091 A JP 25933091A JP H05102227 A JPH05102227 A JP H05102227A
Authority
JP
Japan
Prior art keywords
wire
conductive
semiconductor device
resin
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25933091A
Other languages
English (en)
Inventor
Tadaaki Nakano
忠明 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP25933091A priority Critical patent/JPH05102227A/ja
Publication of JPH05102227A publication Critical patent/JPH05102227A/ja
Pending legal-status Critical Current

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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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  • Wire Bonding (AREA)

Abstract

(57)【要約】 【目的】導電性ワイヤにより接続して組立を行なう半導
体装置において、前記導電性ワイヤを非導電性樹脂によ
り一方向または、複数の方向から被覆しながら組立を行
い、半導体装置の各々ワイヤの一部を非導電性樹脂によ
り被覆する。 【構成】貫通管からなるボンディングツール２の脇に一
方向または、複数方向から早乾性かつ高粘度の非導電性
樹脂をボンディングツールの軌跡に連動させボンディン
グワイヤに吹き付ける噴射機１を持つ。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、ワイヤボンディング工
程を行う半導体製造装置に関する。
【０００２】
【従来の技術】導電性ワイヤによりリードフレームイン
ナリードやセラミック基板やガラエポ等樹脂基板表面と
半導体装置のパッド部とを接続するワイヤボンディング
工程は半導体装置の組立工程の１つである。導電性ワイ
ヤの部材としては、Ａｕ，Ａｌ，Ｃｕ等が主に用いられ
る。しかし、半導体装置から外部に信号を出したり、半
導体装置に電源を供給したり、半導体装置が外部から信
号を受け取ったりするための電極であるッパッド部とリ
ードフレームインナリードやセラミック基板やガラエポ
等樹脂基板表面との距離が従来の３ｍｍ前後から最近は
４〜６ｍｍと延びる傾向にある。また、上記のパッド部
間のピッチが１６０ｕｍ前後から最近は１１０ｕｍ前後
に微細化されるなどのためワイヤが倒れたりワイヤ同士
が接触しやすくなってきている。そのため非導電性樹脂
で導電性ワイヤを被覆してある被覆ワイヤというものが
用いられるようになってきた。図３に被覆ワイヤの構造
を示す。
【０００３】
【発明が解決しようとする課題】しかし、上記のような
従来の技術では、パッド部に接続するためのボールを作
る際に被覆ワイヤの非導電性樹脂は蒸発するか、導電性
ワイヤの部材のボールに含まれてしまう。この時、気化
した非導電性樹脂は、貫通管からなるボンディングツー
ルの先端を汚し、上記ボンディングツールの寿命を短く
してしまう。また、ボール中の非導電性樹脂のために導
電性ワイヤでのボンディング条件と異なってしまい、導
電性ワイヤから被覆ワイヤへ変えて適正なボンディング
条件となるまでかなりの時間がかかってしまう。その他
にワイヤボンディング装置も導電性ワイヤ用と被覆ワイ
ヤ用では異なる。それは導電性ワイヤを用いるワイヤボ
ンディング装置は半導体装置から外部に信号を出した
り、半導体装置に電源を供給したり、半導体装置が外部
から信号を受け取ったりするための電極であるッパッド
部とリードフレームインナリードやセラミック基板やガ
ラエポ等樹脂基板表面と接合するが、被覆ワイヤを用い
るワイヤボンディング装置は一度導電性ワイヤの表面に
ついている非導電性樹脂を取り除いてやる工程が追加さ
れる。これは、非導電性樹脂は半導体装置のパッド部の
部材である金との合金ができない為あるていどの非導電
性樹脂を取り除きそれから金ボールを形成する。よって
従来の導電性ワイヤを用いて組立を行っていた半導体装
置をただちに被覆ワイヤに置き換えることはできない。
【０００４】本発明は上記の課題を解決すべくなされる
もので、パッド部とリードフレームインナリードやセラ
ミック基板やガラエポ等樹脂基板表面とを結ぶワイヤ長
が長くなったり、パッド部とパッド部とのピッチが狭く
なってもワイヤボンディング装置を変更することなく、
またワイヤボンディング条件も変えることもなく行える
ことを目的とした半導体製造装置である。
【０００５】
【課題を解決するための手段】本発明に係わる半導体製
造装置は、リードフレームインナリードやセラミック基
板あるいはガラエポ等樹脂基板表面の端子とパッド部
（半導体装置と外部との信号をやりとりする外部接続端
子）を導電性ワイヤにより接続して組立を行なう半導体
装置において、前記導電性ワイヤを非導電性樹脂により
一方向または、複数の方向から被覆しながら組立を行う
ことを特徴とする。
【０００６】
【実施例】図１は本発明の実施例である半導体製造装置
の特徴部分である。
【０００７】製造方法として、図１（ａ）の貫通管から
なるボンディングツールは半導体装置のパッド部の上空
へ移動後パッド部へ向かって下降する。図１（ｂ）のよ
うに半導体装置のパッド部へボンディング後貫通管から
なるボンディングツールは上方向へ移動する。その際図
１（ｃ）のようにボンディングツールが上方向へ約１０
０ｕｍ移動した位置から導電性ワイヤに向けボンディグ
ツールの両脇に取り付けられている噴射機から早乾性で
高粘度の非導電性樹脂を吹き付ける。すると非導電性樹
脂は導電性ワイヤの表面を１ｕｍ前後覆いその部分は非
導電となる。上記のように導電性ワイヤへ非導電性樹脂
を吹き付けるのは、図１（ｄ）のようにボンディングツ
ールが最も高い位置に移動するまでである。ボンディン
グツールの軌跡を従来のパッド部上空からただリードフ
レームインナリードやセラミック基板あるいはガラエポ
等樹脂基板表面の端子へ下降させるものから、パッド部
上空からもう一度半導体装置の中心に向かいボンディン
グツールを移動させその後さらにボンディングツールを
リードフレームインナリード方向の上空へ移動させてイ
ンナリードへ向け下降させるなどのリバースモーション
機能を使用している場合についても同様にボンディング
ツールが最も高い位置に移動するまで行う。この後図１
（ｅ）のようにボンディングツールは、リードフレーム
インナリードやセラミック基板あるいはガラエポ等樹脂
基板表面の端子に向かい下降していく。上記の一連の動
作を全ワイヤに適応すると図２のようになる。このこと
によってワイヤ長が長くなったり、パッド間のピッチが
狭くなりり仮に接触しても短絡したことにはならない。
【０００８】
【発明の効果】以上に述べたように発明すれば、パッド
部（半導体装置と外部との信号をやりとりする外部接続
端子）と、リードフレームインナリードやセラミック基
板あるいはガラエポ等樹脂基板表面との距離が長くなっ
たり、パッド部間のピッチが狭い半導体装置のワイヤボ
ンディング工程においても導電性ワイヤすべてを非導電
性樹脂で被覆されているボンディングワイヤを使用せず
に今までの導電性ワイヤを使用し、同じボンディング条
件で行えるという効果がある。
【図面の簡単な説明】
【図１】実施例を示す半導体製造装置の特徴的製造方法
図
【図２】実施例を示す半導体装置図
【図３】本発明の半導体製造装置によるボンディングワ
イヤの断面図
【符号の説明】
１ 噴射機 ２ ボンディングツール ３ 非導電性樹脂 ４ パッド部 ５ 導電性ワイヤ ６ 半導体装置 ７ リードフレームインナリード

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】リードフレームインナリードやセラミック
    基板あるいはガラエポ等樹脂基板表面の端子とパッド部
    （半導体装置と外部との信号をやりとりする外部接続端
    子）を導電性ワイヤにより接続して組立を行なう半導体
    装置において、前記導電性ワイヤを非導電性樹脂により
    一方向または、複数の方向から被覆しながら組立を行う
    ことを特徴とする半導体製造装置。
JP25933091A 1991-10-07 1991-10-07 半導体製造装置 Pending JPH05102227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25933091A JPH05102227A (ja) 1991-10-07 1991-10-07 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25933091A JPH05102227A (ja) 1991-10-07 1991-10-07 半導体製造装置

Publications (1)

Publication Number Publication Date
JPH05102227A true JPH05102227A (ja) 1993-04-23

Family

ID=17332600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25933091A Pending JPH05102227A (ja) 1991-10-07 1991-10-07 半導体製造装置

Country Status (1)

Country Link
JP (1) JPH05102227A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330346A (ja) * 1995-05-31 1996-12-13 Nec Kyushu Ltd 半導体装置の製造方法
WO2001007535A1 (de) * 1999-07-28 2001-02-01 Clariant International Ltd. Smektische flüssigkristallschalt- oder anzeigevorrichtung mit hohem kontrast

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330346A (ja) * 1995-05-31 1996-12-13 Nec Kyushu Ltd 半導体装置の製造方法
US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
WO2001007535A1 (de) * 1999-07-28 2001-02-01 Clariant International Ltd. Smektische flüssigkristallschalt- oder anzeigevorrichtung mit hohem kontrast

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