JPH0499365A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0499365A JPH0499365A JP2208955A JP20895590A JPH0499365A JP H0499365 A JPH0499365 A JP H0499365A JP 2208955 A JP2208955 A JP 2208955A JP 20895590 A JP20895590 A JP 20895590A JP H0499365 A JPH0499365 A JP H0499365A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric film
- become
- film
- oxide film
- pbtio3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910020698 PbZrO3 Inorganic materials 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract description 2
- 239000002075 main ingredient Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 230000015654 memory Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、強誘電体を用いた、メモリ、中でも特に、容
量に電荷をためることに°より信号を記憶する、ダイナ
ミックＲＡＭの構造に関するもので〔発明の概要〕
本発明は、強誘電体膜を用いた、メモリの構造において
、強誘電体膜が、高濃度拡散層上に形成され、かつ強誘
電体膜と高濃度拡散層との間の少なくとも一部分に、Ｔ
ｉ、Ｈｆ、Ｚｒ、Ｖ、Ｎｂ、Ｔａのうちのいずれかを主
成分とする酸化膜を形成することにより、比誘電率の大
きい、かつ、絶縁耐圧の高いキャパシタを集積化させた
メモリを得るようにしたものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a structure of a memory using a ferroelectric material, particularly a dynamic RAM that stores signals by storing electric charge in a capacitor. [Summary of the Invention] The present invention provides a memory structure using a ferroelectric film, in which the ferroelectric film is formed on a high concentration diffusion layer, and the ferroelectric film and the high concentration diffusion layer are connected to each other. at least a portion between T
By forming an oxide film containing any one of i, Hf, Zr, V, Nb, and Ta as a main component, a memory in which a capacitor with a high dielectric constant and withstand voltage is integrated is obtained. This is how it was done.
従来の半導体メモＩＪ Ｄ ＲＡ Ｍとしては、高濃度
拡散層上に８１０２をキャパシタの絶縁膜としてもちい
ていた。In the conventional semiconductor memory IJD RAM, 8102 was used as a capacitor insulating film on a heavily doped diffusion layer.
しかし、近年、微細化が進み、素子面積を小さ（する努
力がされている。微細化を進めると、キャバシタを形成
する面積も小さ（成り、電荷を貯えるに必要な容量を確
保出来な（なってきた。そこで、例えば、キャパシタの
面積を太き（取るために、トレンチ型のキャパシタや、
キャパシタをトランジスタの上部にまで集積化させたス
タック型のキャパシタなどのように、構造によりキャパ
シタの面積を太き（する試みや、Ｓ ｉ ｔＪ９、Ｔａ
Ｏ２などのように比誘電率が大きい材料を用いてキャパ
シタの容量を増です試みなどがされてきたしかし、これ
らのいずれの方法も十分な容量を得るまでにはいたって
いない。そこで本発明はこのような課題を解決するもの
で、その目的とするところは、比誘電率が桁違いに大き
い強誘電体膜を用いて、容量の大きいキャパシタを持ち
、がっ、絶縁耐圧の十分なりＲＡＭなどの半導体メモリ
を提供するところにある。However, in recent years, miniaturization has progressed, and efforts are being made to reduce the element area. Therefore, for example, in order to increase the area of the capacitor, trench-type capacitors,
Attempts have been made to increase the area of the capacitor depending on the structure, such as stacked capacitors in which the capacitor is integrated to the top of the transistor, Si tJ9, Ta
Attempts have been made to increase the capacitance of a capacitor by using a material with a high dielectric constant, such as O2, but none of these methods has reached the point where a sufficient capacitance can be obtained. The present invention is intended to solve these problems, and its purpose is to create a capacitor with a large capacitance by using a ferroelectric film with an order of magnitude higher dielectric constant, and to create a capacitor with a high dielectric strength. There are enough semiconductor memories such as RAM available.
本発明は、強誘電体膜を用いたメモリの構造において、
強誘電体膜が高濃度拡散層上に形成され、かつ強誘電体
膜と高濃度拡散層との間の少なくとも一部分に、Ｔｉ、
Ｈｆ、Ｚｒ、Ｖ、Ｎｂ、Ｔａのうちのいずれかを主成分
とする酸化膜を形成したことを特徴とする。The present invention provides a structure of a memory using a ferroelectric film.
A ferroelectric film is formed on the high concentration diffusion layer, and at least a portion between the ferroelectric film and the high concentration diffusion layer contains Ti,
It is characterized in that an oxide film containing any one of Hf, Zr, V, Nb, and Ta as a main component is formed.
第１図は、本発明の半導体装置の一実施例に於ける主要
断面図である。以下、第１図に従い、本発明の半導体装
置を説明する。ここでは説明の都合上８１基板を用い、
Ｎチャンネルトランジスタを用いた例につき説明する。FIG. 1 is a main sectional view of an embodiment of the semiconductor device of the present invention. The semiconductor device of the present invention will be described below with reference to FIG. For convenience of explanation, 81 board is used here.
An example using an N-channel transistor will be explained.
１０１はＰ型Ｓ１基板であり、例えば２００ｂｍ、αの
比抵抗のウェハを用いる。１０２は捩子分離用の絶縁膜
であり、例えば、パ、従来技術であるＬＯＯＯ３法によ
り酸化膜を６０［１０Ａ形成する１０３はソースとなる
Ｎ型拡散層であり、例えばリンを８０にθＶ５Ｅｆｆ５
＞−２イオン注入することにより形成する。１０４はド
レインとなるＮ型拡散層であり、１０６と同時に形成す
る。１０５はゲート電極であり、例えばリンでドープさ
れたポＩＪ Ｓ ｉを用いる。１０６が本発明の構成要
素となる、強誘電体膜であるＰｂＴｉＯ３、ＰＺＴ（Ｐ
ｂＺｒＯｓ 、ｐｂ’ｒｉｏ３ 、ＰＬＺＴ（Ｌａ、
ＰｂＺｒＯ３、ＰｂＴｉ０８）であり、例えばスパッタ
法などにより１０００Ａ形成する。１０７は強誘電体膜
の電極となる例えばボ＋） ３ ｉであり、例えばＣＶ
Ｄ法により１５０［］Ａの膜厚で形成する。１０８は１
０７の電極とドレインへの配線電極である１０９を分離
する絶縁膜であり、（ｉ！：！ コテハ、ＣＶＤ法によ
りＳ ｉ Ｏ２膜を４００ＯＡ形成する。そして１１０
が本発明のもう一つの構成要素となるＴｉ、Ｈｆ、Ｚｒ
、Ｖ、Ｎｂ、Ｔａの５ちのいずれかを主成分とする酸化
膜であり、例えば、これらの金属をスパッタ法により、
例えば１００Ａ形成後、１０６０強誘電体膜を同じくス
パッタ法により形成後、酸素を含む雰囲気中でアニール
することにより、これらの金属は酸化され酸化膜となる
。Reference numeral 101 denotes a P-type S1 substrate, for example, a wafer of 200 bm and a specific resistance of α is used. Reference numeral 102 is an insulating film for screw isolation, and 103 is an N-type diffusion layer that will serve as a source. For example, an oxide film is formed using phosphorus at 60[10A] using the conventional LOOO3 method.
>-2 ion implantation. Reference numeral 104 denotes an N-type diffusion layer which becomes a drain, and is formed at the same time as 106. A gate electrode 105 is made of, for example, phosphorus-doped PoIJSi. 106 is a ferroelectric film PbTiO3, PZT (P
bZrOs, pb'rio3, PLZT(La,
PbZrO3, PbTi08), and is formed with a thickness of 1000 A by, for example, a sputtering method. 107 is an electrode of the ferroelectric film, for example, Bo+) 3 i, for example, CV
It is formed with a film thickness of 150[]A by method D. 108 is 1
This is an insulating film that separates the electrode 07 and the wiring electrode 109 to the drain.
Ti, Hf, Zr, which is another component of the present invention
, V, Nb, and Ta. For example, these metals are sputtered by sputtering.
For example, after forming 100A, a 1060 ferroelectric film is also formed by the sputtering method, and then annealing is performed in an atmosphere containing oxygen, whereby these metals are oxidized and become an oxide film.
さて、第１図のような構造のキャパシタの容量いま例と
してＴｉＯ□を用いた場合について考えてみると、強誘
電体膜の比誘電率は、仮に強誘電体膜としてＰＺＴを用
いた場合、約１０００であるため、
ｉ ／ Ｃ＝ Ｉ ／ Ｏ（Ｔ ｉ Ｏ２） ＋ １
／ Ｃ（Ｐ Ｚ Ｔ ）となり、前述した膜厚（ｐｚＴ
＝ｔ ０ＯＣＩＡ、Ｔｉ０２＝１００．Ａ、ＴｉＯ２の
比誘電率＝８０）で計算すると、５１０２換算で膜厚１
０Ａのキャビくシタが形成出来る。かりに１０ＯＡのＴ
ｉＯ２のみの場合には、絶縁耐圧が数ボルトしかなく、
素子は構成出来なかった。それに対し、第１図のように
ＴｌＯ２と強誘電体膜を積層化させることにより、絶縁
耐圧としては２０Ｖの値が得られ、絶縁耐圧としても十
分であり、かつ容量としても非常に畦位面檀当たりの容
量値が大ぎいキャパシタが得られた。また、ＰＺＴの構
成元素、特に４族、及び５族の遷移金属の酸化物を用い
ることにより、ＰＺＴの結晶性が優れ、また比誘電率な
どの電気特性も優れた強誘電体膜が形成出来る。Now, considering the case where TiO□ is used as an example, the relative dielectric constant of the ferroelectric film is as follows: If PZT is used as the ferroelectric film, Since it is about 1000, i/C=I/O(T i O2) + 1
/C(PZT), and the film thickness (pzT
=t0OCIA, Ti02=100. A, relative dielectric constant of TiO2 = 80), the film thickness is 1 in terms of 5102.
A 0A cavity can be formed. Karini 10OA T
In the case of only iO2, the dielectric strength is only a few volts,
The element could not be configured. On the other hand, by laminating TlO2 and a ferroelectric film as shown in Figure 1, a dielectric strength value of 20V can be obtained, which is sufficient as a dielectric strength voltage and has a very low capacitance. A capacitor with a large capacitance value per unit was obtained. In addition, by using oxides of PZT's constituent elements, particularly group 4 and group 5 transition metals, it is possible to form a ferroelectric film with excellent crystallinity of PZT and excellent electrical properties such as dielectric constant. .
さらにＰＺＴを形成後、酸素を含む雰囲気中でアニール
することにより、さらに比誘電率が大きい強誘電体膜を
得ることが出来る。実際にアニールを行なわない場合に
は比誘電率が５００（ＰＺＴの場合）に対し、アニール
を行なうことにより、比誘電率として１５００の値が得
られた。Furthermore, by annealing in an atmosphere containing oxygen after forming PZT, a ferroelectric film with an even higher dielectric constant can be obtained. When no annealing was actually performed, the relative permittivity was 500 (in the case of PZT), but by annealing, a relative permittivity of 1500 was obtained.
本発明のように、強誘電体膜を用いた、メモリの構造に
おいて、強誘電体膜が高濃度拡散層上に形成され、かつ
強誘電体膜と高濃度拡散層との間の少なくとも一部分に
、Ｔｉ、Ｈｆ、Ｚｒ、Ｖ。As in the present invention, in a memory structure using a ferroelectric film, the ferroelectric film is formed on a high concentration diffusion layer, and at least a portion between the ferroelectric film and the high concentration diffusion layer is provided. , Ti, Hf, Zr, V.
Ｎｂ、Ｔａのうちのいずれかを主成分とする酸化膜を形
成したため、絶縁耐圧が高（、かつ容量としても、非常
に一位面積当たりの容量値が大きいキャパシタが集積化
出来るという効果を有する。Since an oxide film containing either Nb or Ta as a main component is formed, it has the effect of being able to integrate a capacitor with a high dielectric strength voltage (and a very large capacitance per area). .
第１図は本発明の主要断面図である。
１０１・・・・・・・・・Ｓ１基板
１０２・・・・・・・・・累子分離絶縁膜１０６・・・
・・・・・・ソース拡散層・・・・・・・・・ドレイン
拡散層
・・・・・・・・・ゲート電極
・・・・・・・・・強誘電体膜
・・・・・・・・・電 極
・・・・・・・・・層間絶縁膜
・・・・・・・・・配線電極
・・・・・・・・・Ｔ ｉ Ｏ。FIG. 1 is a main sectional view of the present invention. 101...S1 substrate 102...Separator isolation insulating film 106...
......Source diffusion layer...Drain diffusion layer...Gate electrode...Ferroelectric film... ...Electrode...Interlayer insulating film...Wiring electrode...T i O.
Claims (1)
基板上に、集積された半導体装置において、前記強誘電
体膜が前記高濃度拡散層上に形成され、かつ前記強誘電
体膜と前記高濃度拡散層との間の少なくとも一部分に、
Ｔｉ、Ｈｆ、Ｚｒ、Ｖ、Ｎｂ、Ｔａのうちのいずれかを
主成分とする酸化膜が形成されていることを特徴とする
半導体装置。(1) In a semiconductor device in which a ferroelectric film is integrated on the same semiconductor substrate on which active elements are formed, the ferroelectric film is formed on the high concentration diffusion layer, and the ferroelectric film and the high concentration diffusion layer,
A semiconductor device characterized in that an oxide film containing any one of Ti, Hf, Zr, V, Nb, and Ta as a main component is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2208955A JPH0499365A (en) | 1990-08-07 | 1990-08-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2208955A JPH0499365A (en) | 1990-08-07 | 1990-08-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499365A true JPH0499365A (en) | 1992-03-31 |
Family
ID=16564918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2208955A Pending JPH0499365A (en) | 1990-08-07 | 1990-08-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499365A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001045161A1 (en) * | 1999-12-14 | 2001-06-21 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory and method of driving nonvolatile memory |
| US6465260B1 (en) | 1999-06-28 | 2002-10-15 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device having a ferroelectric capacitor and method for the manufacture thereof |
-
1990
- 1990-08-07 JP JP2208955A patent/JPH0499365A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6465260B1 (en) | 1999-06-28 | 2002-10-15 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device having a ferroelectric capacitor and method for the manufacture thereof |
| WO2001045161A1 (en) * | 1999-12-14 | 2001-06-21 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory and method of driving nonvolatile memory |
| US6667501B2 (en) | 1999-12-14 | 2003-12-23 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory and method for driving nonvolatile memory |
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