JPH0499327A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0499327A JPH0499327A JP21769390A JP21769390A JPH0499327A JP H0499327 A JPH0499327 A JP H0499327A JP 21769390 A JP21769390 A JP 21769390A JP 21769390 A JP21769390 A JP 21769390A JP H0499327 A JPH0499327 A JP H0499327A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- exposed
- electrode
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052721 tungsten Inorganic materials 0.000 abstract description 14
- 239000010937 tungsten Substances 0.000 abstract description 14
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005253 cladding Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 206010034703 Perseveration Diseases 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にボンディング線を接続
するボンディングバンドの構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the structure of a bonding band for connecting bonding lines.
従来のポンディングパッドの構造を第２図に示す。同図
において、１は半導体基板の表面に形成された酸化膜で
あり、この酸化膜１上にアルミニウム等の電極膜２を所
要パターンに形成している。The structure of a conventional bonding pad is shown in FIG. In the figure, 1 is an oxide film formed on the surface of a semiconductor substrate, and an electrode film 2 made of aluminum or the like is formed on this oxide film 1 in a desired pattern.
ソシて、この電極膜２上乙こバノシヘーンヨン膜４を被
着し、かつ電極膜２上の所要領域のバッジ−・−ジョン
膜４を開口することでホンディングパ。Then, a bonding film 4 is applied on the electrode film 2, and the badge film 4 is opened in a required area on the electrode film 2 to form a bonding pad.
ドを構成している。このボンディングバンドには、パッ
シベーション膜４の開口内に露呈された電極膜２に金（
Ａｕ）等のボンディング線５が接続されることは言うま
でもない。It makes up the code. In this bonding band, gold (
Needless to say, a bonding wire 5 made of Au) or the like is connected.
上述した従来のボンディングバンドは、ボンディング１
５を接続したときには、電極膜２の表面中央領域はボン
ディング線５の金で被覆されるが、その周辺部は電極膜
２がそのまま露出されることになる。そして、電極膜２
は通常ではアルミニウムが使用されることが多く、アル
ミニウムは水分（湿気）に弱く、腐食を起こし易いため
、露出された電極膜２の周辺部は湿気に触れやすく、腐
食が生じ易い。この腐食は次第に進行し、最終的には電
極膜２の全体が腐食して半導体装置の特性不良を起こす
という問題がある。The conventional bonding band described above is bonding 1
5 is connected, the center region of the surface of the electrode film 2 is covered with the gold of the bonding wire 5, but the electrode film 2 is exposed as it is around the gold bonding wire 5. And electrode film 2
Usually, aluminum is often used, and since aluminum is sensitive to water (moisture) and easily corrodes, the exposed peripheral portion of the electrode film 2 is easily exposed to moisture and corrodes easily. This corrosion progresses gradually, and eventually the entire electrode film 2 is corroded, resulting in a problem that the characteristics of the semiconductor device are deteriorated.
本発明の目的は電極膜のｇ蝕を回避して特性不良を未然
に防止した半導体装置を提供することにある。An object of the present invention is to provide a semiconductor device that avoids g-erosion of an electrode film and prevents characteristic defects.
本発明の半導体装置は、パーシヘーション膜の開口を通
して露出されたボンディングバンドとしての電極膜の周
辺部に、耐腐蝕性の金属膜を被着している。In the semiconductor device of the present invention, a corrosion-resistant metal film is coated on the periphery of the electrode film as a bonding band exposed through the opening of the perseveration film.
［作用］
本発明によれば、電極膜の露出された周辺部が耐腐蝕性
の金属膜で被覆されるため、ボンディング線が接続され
ない電極膜の周辺部の腐蝕が防止される。[Operation] According to the present invention, the exposed peripheral portion of the electrode film is coated with a corrosion-resistant metal film, so that corrosion of the peripheral portion of the electrode film to which the bonding wire is not connected is prevented.
（実施例〕 次に、本発明を図面を参照して説明する。(Example〕 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を示し、ボンディングバンド
の断面図である。同図において、１は半導体基板上の酸
化膜、２はアルミニウムで所要パターンに形成した電極
膜である。この電極膜３の表面には、腐蝕し難い金属膜
（耐腐蝕金属膜）、ここではタングステン膜３を形成し
、その上で全面にパッシベーション膜４を被着している
。そして、このパッシベーション膜４の一部を開口して
前記タングステン膜３を露出させるとともに、露出され
たタングステン膜３はパノンベーンヨン膜４の開口より
も−回り小さい中央の領域を開口して前記電極膜２を露
出させている。FIG. 1 shows an embodiment of the present invention, and is a sectional view of a bonding band. In the figure, 1 is an oxide film on a semiconductor substrate, and 2 is an electrode film formed of aluminum into a desired pattern. On the surface of this electrode film 3, a metal film that does not easily corrode (corrosion-resistant metal film), here a tungsten film 3, is formed, and a passivation film 4 is deposited on the entire surface thereof. Then, a part of the passivation film 4 is opened to expose the tungsten film 3, and the exposed tungsten film 3 is opened in a central area which is smaller in diameter than the opening of the Panon-Venyon film 4, and the electrode film 3 is opened. is exposed.
さらに、ボンディング線５は前記タングステン膜３の開
口よりも大きな径寸法のボールホンディングにより電極
膜２およびタングステン膜３上に接続している。Further, the bonding wire 5 is connected to the electrode film 2 and the tungsten film 3 by ball bonding having a diameter larger than the opening of the tungsten film 3.
この結果、電極膜２は、その中央部分は金からなるボン
ディング線５のボールにより被覆され、その周辺部はタ
ングステン膜３により被覆されることになる。As a result, the central portion of the electrode film 2 is covered with the ball of the bonding wire 5 made of gold, and the peripheral portion thereof is covered with the tungsten film 3.
このような構造にすることにより、電極膜２はその中央
部分はボンディング線５によって露出されることはなく
、かつ周辺部はタングステン膜３ムこよって露出される
ことがない。したがって、アルミニウムで構成される電
極膜２が外気に接触されることはなく、電極膜２が湿気
によって腐蝕されることか防止され、半導体装置の特性
劣化を防止することかできる。With this structure, the center portion of the electrode film 2 is not exposed by the bonding line 5, and the peripheral portion is not exposed by the tungsten film 3. Therefore, the electrode film 2 made of aluminum is not brought into contact with the outside air, so that the electrode film 2 is prevented from being corroded by moisture, and deterioration of the characteristics of the semiconductor device can be prevented.
なお、電極膜２０周辺部にタングステン膜３を形成しで
も、タングステン膜３は導電膜であるため、ボンディン
グ線５のボールとの接触面積は従来と同様に確保でき、
接続抵抗が増大されることはない。Note that even if the tungsten film 3 is formed around the electrode film 20, since the tungsten film 3 is a conductive film, the contact area of the bonding wire 5 with the ball can be secured as in the conventional case.
Connection resistance is not increased.
また、耐腐蝕金属膜は、前記したタングステン膜の他に
、モリブデン膜、チタン膜金種々の材質のものが使用で
きる。Further, as the corrosion-resistant metal film, in addition to the above-mentioned tungsten film, molybdenum film, titanium film, gold, and various other materials can be used.
〔発明の効果］
以上説明したように本発明は、パーシヘーション膜の開
口内に露出された電極膜の周辺部に、耐腐蝕金属膜を被
着しているので、ボンディング線によって被覆されない
電極膜の周辺部が耐腐蝕金属膜によって被覆されること
になるため、電極膜の周辺部の腐蝕が防止され、半導体
装置の特性劣化を防止することができる効果がある。[Effects of the Invention] As explained above, in the present invention, since a corrosion-resistant metal film is coated on the peripheral part of the electrode film exposed in the opening of the perseveration film, the electrode is not covered by the bonding wire. Since the periphery of the film is covered with the corrosion-resistant metal film, corrosion of the periphery of the electrode film is prevented, and deterioration of the characteristics of the semiconductor device can be prevented.
第１図は本発明の一実施例の要部の断面図、第２図は従
来の半導体装置の一部の断面図である。
１・・・酸化膜、２・・・電極膜、３・・・タングステ
ン膜（ｉｔｇ＃！［！金ｔＥＩＩＪ） 、４・・・パッ
シベーション膜、５・・・ボンディング線。FIG. 1 is a sectional view of a main part of an embodiment of the present invention, and FIG. 2 is a sectional view of a part of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1... Oxide film, 2... Electrode film, 3... Tungsten film (itg#! [! Gold tEIIJ), 4... Passivation film, 5... Bonding line.
Claims (1)
で覆い、このパーシベーション膜の開口を通して前記電
極膜を露出させ、この露出面にボンディング線を接続し
てなる半導体装置において、前記電極膜の露出された面
の周辺部には、耐腐蝕性の金属膜を被着したことを特徴
とする半導体装置。1. In a semiconductor device in which an electrode film provided on a semiconductor substrate is covered with a passivation film, the electrode film is exposed through an opening in the perivation film, and a bonding line is connected to this exposed surface, the exposure of the electrode film is A semiconductor device characterized in that a corrosion-resistant metal film is deposited on the periphery of the exposed surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21769390A JPH0499327A (en) | 1990-08-18 | 1990-08-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21769390A JPH0499327A (en) | 1990-08-18 | 1990-08-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499327A true JPH0499327A (en) | 1992-03-31 |
Family
ID=16708245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21769390A Pending JPH0499327A (en) | 1990-08-18 | 1990-08-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252470A (en) * | 2016-08-30 | 2016-12-21 | 厦门市三安光电科技有限公司 | A kind of gallium nitride based light emitting diode and preparation method thereof |
-
1990
- 1990-08-18 JP JP21769390A patent/JPH0499327A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252470A (en) * | 2016-08-30 | 2016-12-21 | 厦门市三安光电科技有限公司 | A kind of gallium nitride based light emitting diode and preparation method thereof |
| US10629776B2 (en) | 2016-08-30 | 2020-04-21 | Xiamen San' an Optoelectronics Co., Ltd. | Light emitting device and production method thereof |
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