JPH049376B2 - - Google Patents

Info

Publication number
JPH049376B2
JPH049376B2 JP3777182A JP3777182A JPH049376B2 JP H049376 B2 JPH049376 B2 JP H049376B2 JP 3777182 A JP3777182 A JP 3777182A JP 3777182 A JP3777182 A JP 3777182A JP H049376 B2 JPH049376 B2 JP H049376B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor substrate
etching
mounting table
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3777182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154234A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3777182A priority Critical patent/JPS58154234A/ja
Publication of JPS58154234A publication Critical patent/JPS58154234A/ja
Publication of JPH049376B2 publication Critical patent/JPH049376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP3777182A 1982-03-09 1982-03-09 半導体基体の腐食方法 Granted JPS58154234A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3777182A JPS58154234A (ja) 1982-03-09 1982-03-09 半導体基体の腐食方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3777182A JPS58154234A (ja) 1982-03-09 1982-03-09 半導体基体の腐食方法

Publications (2)

Publication Number Publication Date
JPS58154234A JPS58154234A (ja) 1983-09-13
JPH049376B2 true JPH049376B2 (ko) 1992-02-20

Family

ID=12506727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3777182A Granted JPS58154234A (ja) 1982-03-09 1982-03-09 半導体基体の腐食方法

Country Status (1)

Country Link
JP (1) JPS58154234A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69106260T2 (de) * 1990-07-31 1995-08-10 Sharp Kk Papierzufuhrvorrichtung.
JP2721059B2 (ja) * 1991-11-06 1998-03-04 富士通テン株式会社 テープ再生装置及びその方法
JP4818133B2 (ja) 2007-01-17 2011-11-16 ニスカ株式会社 印刷装置

Also Published As

Publication number Publication date
JPS58154234A (ja) 1983-09-13

Similar Documents

Publication Publication Date Title
CN101275287A (zh) 大面积硅片的旋转腐蚀系统和方法
CN101599451B (zh) 对带有绝缘埋层的半导体衬底进行边缘倒角的方法
JPS644663B2 (ko)
JPH049376B2 (ko)
JPH04128010A (ja) シリコン単結晶の切断方法
US2849296A (en) Etching composition and method
US3348987A (en) Method of producing thin layers of galvanomagnetic semiconductor material, particularly hall generators of aiiibv compounds
CN101599452B (zh) 腐蚀带有绝缘埋层的衬底边缘的方法
JPS60119728A (ja) エッチング液撹拌装置
JPS5843524A (ja) メサエツチング装置
JPS61228630A (ja) 半導体ウエハのエツチング方法
JPS58123730A (ja) 半導体ウエハ−エツチング装置
JPH0353393B2 (ko)
JP2589139Y2 (ja) ペレットエッチング装置
JPH02278824A (ja) ウェットエッチング装置
JPH0230836Y2 (ko)
JPH01316937A (ja) 半導体基板の洗浄方法
JP3395616B2 (ja) 半導体ウエハのエッチング加工方法及びその装置
JPS60239029A (ja) 半導体装置の製造方法
JPS6327784Y2 (ko)
KR19980053007A (ko) 웨이퍼 에칭 장치
JPS62132325A (ja) ウエフアのエツチング方法およびそれに用いるウエフア・キヤリア
CN116825671A (zh) 一种多晶硅蚀刻设备与蚀刻方法
JPH0722381A (ja) 誘電体分離基板の製造装置と製造方法
KR20150046506A (ko) 글라스 제조방법