JPH0486505A - Strain resistance device - Google Patents
Strain resistance deviceInfo
- Publication number
- JPH0486505A JPH0486505A JP20267890A JP20267890A JPH0486505A JP H0486505 A JPH0486505 A JP H0486505A JP 20267890 A JP20267890 A JP 20267890A JP 20267890 A JP20267890 A JP 20267890A JP H0486505 A JPH0486505 A JP H0486505A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- thin film
- strain gauge
- doping
- bridge circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 229910000077 silane Inorganic materials 0.000 abstract description 4
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 238000007738 vacuum evaporation Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
れている歪抵抗装置に関し、特に歪ゲージで形成される
抵抗ブリッジのバランスを適正なものとするための調整
手段に係るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a strain resistance device, and particularly to an adjusting means for properly balancing a resistance bridge formed by a strain gauge.
歪抵抗装置は、機械歪による電気抵抗の変化所謂ピエゾ
抵抗効果を利用したもので、ピエゾ抵抗効果を奏する歪
ゲージを、機械的応力を受は歪を生ずる起歪体に付設し
、起歪体の変動を電気抵抗の変化として検知し、この抵
抗値変化に基づいて起歪体に加わった応力を計測し、被
測定対象である圧力や加速度を検出するものである。具
体的には起歪体を片持支持としたカンチレバータイプや
、枠体に膜を張設したダイヤフラムタイプのものが存在
し、歪ゲージによる分類としては歪ゲージにその表面に
歪ゲージを拡散により形成する拡散型、更には起歪体の
表面に直接半導体薄膜による歪ゲージを形成する半導体
薄膜型等が知られている。A strain resistance device utilizes the so-called piezoresistance effect, which is a change in electrical resistance due to mechanical strain. This method detects fluctuations in electrical resistance as changes in electrical resistance, measures the stress applied to the strain body based on this change in resistance value, and detects the pressure and acceleration of the object to be measured. Specifically, there are cantilever types in which the strain-generating body is cantilever-supported, and diaphragm types in which a membrane is stretched over the frame.Classification by strain gauges includes strain gauges with strain gauges attached to the surface by diffusion. A diffusion type in which a strain gauge is formed, and a semiconductor thin film type in which a strain gauge is formed by a semiconductor thin film directly on the surface of a strain generating body are known.
前記の各タイプの内生導体薄膜型が検出感度及び耐久性
のバランスの良さから最も使い易いものと注目されてい
る。The endogenous conductor thin film type described above is attracting attention as being the easiest to use because of its well-balanced detection sensitivity and durability.
ところで半導体薄膜型の歪抵抗装置は、起歪体（カンチ
レバー本体又はダイヤプラム膜体）の表面に周知の半導
体薄膜製造技術で半導体薄膜型の歪ゲージを形成するも
のであるが、歪ゲージは所定の個所に４個形成し、これ
をブリッジ回路に接続し、抵抗値の変化を電圧値の変化
として検出している。具体的には第５図の回路図に示す
通り、右回りに歪ゲージたる抵抗Ｒ１，Ｒ１，Ｒｓ、Ｒ
ａをループ状に接続しくブリッジ回路接続）、ＲＩＲ。By the way, in a semiconductor thin film type strain resistance device, a semiconductor thin film type strain gauge is formed on the surface of a strain generating body (cantilever main body or diaphragm membrane body) using a well-known semiconductor thin film manufacturing technology. Four resistors are formed at the locations shown in FIG. 1, and connected to a bridge circuit to detect a change in resistance value as a change in voltage value. Specifically, as shown in the circuit diagram of Fig. 5, resistors R1, R1, Rs, R as strain gauges are connected clockwise.
a into a loop (bridge circuit connection), RIR.
接続点とＲ，Ｒ，接続点との間に所定の電圧■。を印加
し、Ｒｒ Ｒｚ接続点とＲｓ Ｒａ接続点とから検出出
力Ｖｏｕｔを取り出すが、予め各抵抗の抵抗値において
Ｒ５・Ｒｓ ＝ Ｒｚ・Ｒ４が成立しているとＶＯＬＩ
會＝０であり、抵抗Ｒ，及びＲ１の抵抗値が歪によって
変化することでＶ ｏｕｒ≠０となり歪の程度が検出さ
れるものである。従って起歪体上に半導体薄膜型の歪ゲ
ージを形成する際には前記の条件を満足させる必要があ
る。しかし、各歪ゲージを設計通り誤差がない状態に形
成することは現実上困難である。このため起歪体上に歪
ゲージを形成した後、前記のブリッジ回路のバランス調
節を行っていたものである。A predetermined voltage ■ between the connection point and R, R, and the connection point. is applied and the detection output Vout is extracted from the Rr Rz connection point and Rs Ra connection point, but if R5・Rs = Rz・R4 is established in advance at the resistance value of each resistor, VOLI
V = 0, and the resistance values of the resistors R and R1 change due to strain, so that V our≠0 and the degree of strain is detected. Therefore, when forming a semiconductor thin film type strain gauge on a strain-generating body, it is necessary to satisfy the above-mentioned conditions. However, it is actually difficult to form each strain gauge without error as designed. For this reason, the balance of the bridge circuit was adjusted after forming a strain gauge on the strain body.
従来のバランス調整手段は、第６図に示すように可変抵
抗Ｒｘを外部回路として付加し、可変抵抗Ｒｘの調整で
ブリッジ回路の平衡を実現したものである。In the conventional balance adjustment means, a variable resistor Rx is added as an external circuit as shown in FIG. 6, and the balance of the bridge circuit is realized by adjusting the variable resistor Rx.
前述したように半導体薄膜型の歪抵抗装置には、歪ゲー
ジブリッジ回路の平衡を実現するための調整が必要であ
り、而も従前の調整手段としては外部調整抵抗の接続が
採用されている。しかし、外部調整抵抗を用いることは
、装置の小型化達成の大きな障害であり、また被測定個
所の雰囲気条件の変化によってブリッジ回路の平衡調整
程度も相違し、更には外部調整抵抗と被測定個所即ち歪
ゲージの雰囲気条件に変化が生じても対応できない等の
技術的課題を有している。As mentioned above, the semiconductor thin film type strain resistance device requires adjustment to achieve balance of the strain gauge bridge circuit, and the conventional adjustment means employs connection of an external adjustment resistor. However, using an external adjustment resistor is a major obstacle to achieving miniaturization of the device, and the degree of balance adjustment of the bridge circuit also differs depending on changes in the atmospheric conditions at the location to be measured. That is, there are technical problems such as the inability to cope with changes in the atmospheric conditions of the strain gauge.
そこで本発明は、歪ゲージそのものの抵抗値調整によっ
てブリッジ回路の平衡を達成する手段を提案したもので
ある。Therefore, the present invention proposes a means for achieving balance in the bridge circuit by adjusting the resistance value of the strain gauge itself.
〔課題を解決するための手段］
本発明に係る歪抵抗装置は、起歪体上にプリンジ接続し
たポリシリコン薄膜による歪ゲージを形成してなる歪抵
抗装置に於いて、歪ゲージの一部の不純物ドープ量を変
化させ前記ブリッジ回路を電気的に平衡せしめたことを
特徴とするものである。また、特に前記の歪ゲージの一
部に不純物を選択的にドープピングする手段として、レ
ーザードーピングを採用したことに特徴を有するもので
ある。[Means for Solving the Problems] A strain resistance device according to the present invention is a strain resistance device in which a strain gauge is formed by a polysilicon thin film that is principally connected on a strain body. The present invention is characterized in that the bridge circuit is electrically balanced by varying the amount of impurity doping. Further, the present invention is particularly characterized in that laser doping is employed as a means for selectively doping a portion of the strain gauge with impurities.
ポリシリコン抵抗の抵抗率は不純物のドープ量によって
左右する。従って同一のドープ条件で一旦歪ゲージを形
成した後、歪ゲージのブリッジ回路が平衡でない場合に
、歪ゲージの一部のドープ量を変化せしめ歪ゲージの抵
抗値を調整すると、歪ゲージのブリッジ回路の平衡が実
現する。更に、前記のドープ量変化手段としてレーザー
ドーピングを採用するとドープ量を変化せしめる範囲を
容易に選択できる。The resistivity of a polysilicon resistor depends on the amount of impurity doped. Therefore, after forming a strain gauge under the same doping conditions, if the bridge circuit of the strain gauge is not balanced, if the doping amount of a part of the strain gauge is changed and the resistance value of the strain gauge is adjusted, the bridge circuit of the strain gauge equilibrium is achieved. Furthermore, if laser doping is employed as the doping amount changing means, the range in which the doping amount is changed can be easily selected.
次に本発明の実施例をカンチレバータイプの歪抵抗装置
の場合を例にして説明する。Next, an embodiment of the present invention will be described using a cantilever type strain resistance device as an example.
カンチレバータイプの抵抗装置は、片持支持される基板
１表面にポリシリコン薄膜からなる歪ゲージを形成して
なるもので、前記形成手段は常法の薄膜製造技術で実施
できるが、次に本発明に最適と認められる製造工程に基
づいて説明する。A cantilever type resistance device is formed by forming a strain gauge made of a polysilicon thin film on the surface of a substrate 1 supported in a cantilever manner. The explanation will be based on the manufacturing process that is recognized as the most suitable.
銅合金、ニッケル基合金、ステンレス鋼等で形成された
カンチレバーの基板１の表面にＰ−ＣＶＤ法によって酸
化シラン（Ｓｔｏｗ）の絶縁層を形成し、次に反応ガス
をシラン（Ｓｉｎｓ）及びジボラン（８２Ｈ＆）として
同様にＰ−ＣＶＤ法で絶縁層の表面に所定の不純物とし
てボロン（Ｂ）がドーピングされたアモルファスシリコ
ン薄膜を形成する０次に適宜な熱処理を施して、アモル
ファスシリコン薄膜内の水素を放出せしめ、歪ゲージ２
１．２２．２３．２４ （Ｒ１＋ Ｒｚ、Ｒ３，Ｒ４）
を形成せんとする個所にエキシマレーザを照射してアニ
ールを施し、前記アモルファスシリコン薄膜の一部をポ
リシリコンに変性せしめ、所定のパターニングを行って
歪ゲージ２１〜２４を形成する。更にアルミニウムの真
空蒸着並びにパターニングを行って歪ゲージ２１〜２４
がフルブリッジ接続となるように電極３を形成する。An insulating layer of silane oxide (Stow) is formed on the surface of the cantilever substrate 1 made of copper alloy, nickel-based alloy, stainless steel, etc. by the P-CVD method, and then a reactive gas is added to silane (Sins) and diborane (Stow). 82H&), an amorphous silicon thin film doped with boron (B) as a predetermined impurity is formed on the surface of the insulating layer using the P-CVD method. Next, an appropriate heat treatment is performed to remove the hydrogen in the amorphous silicon thin film. Release, strain gauge 2
1.22.23.24 (R1+ Rz, R3, R4)
An excimer laser is irradiated onto the portion where the amorphous silicon film is to be formed to anneal the amorphous silicon thin film to transform it into polysilicon, followed by predetermined patterning to form the strain gauges 21-24. Furthermore, vacuum evaporation and patterning of aluminum are performed to form strain gauges 21 to 24.
The electrode 3 is formed so as to form a full bridge connection.
以上が歪抵抗装置の形成工程で、本発明は更に歪ゲージ
のブリッジ回路の平衡を実現するため、第３図に示すよ
うにドーピングガス（ジボラン二Ｂ！Ｈ＆）を供給しな
がら、歪ゲージ２４の一部ａをレーザーＡで照射し、前
記歪ゲージ２４の一部ａにボロン（Ｂ）をドープするも
のである。従って前記のドープの範囲及び量によって歪
ゲージ２４の抵抗値は変化するので、第５図におけるＶ
ｏｕｔ−０が成立するまで、歪ゲージ２４の抵抗値を調
整するものである。The above is the process of forming the strain resistance device.The present invention further provides a method for forming the strain gauge 24 while supplying doping gas (diborane2B!H&) as shown in FIG. A part a of the strain gauge 24 is irradiated with a laser A to dope the part a of the strain gauge 24 with boron (B). Therefore, since the resistance value of the strain gauge 24 changes depending on the range and amount of doping, V in FIG.
The resistance value of the strain gauge 24 is adjusted until out-0 is established.
４を付設し、歪抵抗装置本体５に他端を片持支持せしめ
、加速度センサ等に利用するものである。4, and the other end is cantilever-supported by the strain resistance device main body 5, and is used as an acceleration sensor or the like.
尚、本発明は前記実施例に限定されるものでな（、歪ゲ
ージとしてポリシリコン薄膜を採用してフルブリッジ接
続してなるものであれば、カンチレバータイプ以外のダ
イヤフラムタイプのものにも適用され、また歪ゲージと
なるポリシリコン薄膜の形成手段は任意である。It should be noted that the present invention is not limited to the above-mentioned embodiments (but can also be applied to diaphragm type strain gauges other than the cantilever type, as long as they are made of a polysilicon thin film and are connected in a full bridge manner). Furthermore, the method for forming the polysilicon thin film serving as the strain gauge is arbitrary.
〔発明の効果］
本発明は以上のように歪ゲージにポリシリコン薄膜を採
用し、且つ歪ゲージをフルブリッジ接続してなる歪抵抗
装置に於いて、歪ゲージの一部に不純物ドーピングを施
して抵抗値の調整を行ってブリッジ回路の平衡を実現し
たもので、従来の調整用外部抵抗を必要としないため、
外部調整抵抗を原因とする種々の技術的課題は一挙に解
決したものである。[Effects of the Invention] As described above, the present invention provides a strain resistance device in which a polysilicon thin film is used as a strain gauge and the strain gauge is connected in a full bridge, by doping a part of the strain gauge with an impurity. The bridge circuit is balanced by adjusting the resistance value, and does not require the conventional external adjustment resistor.
Various technical problems caused by external adjustment resistors are solved at once.
第１図はカンチレバー基板の平面図、第２図は同一部拡
大図、第３図はレーザードーピング実施状態を示し、第
４図はカンチレバーの組み込み状態を示し、第５図は歪
ゲージのブリッジ回路図、第６図は従来の調整例の回路
図である。
１一基板
２１、２２．２３．２４−一一歪ゲージ（抵抗体）３・
・−電極
４−重り
５−装置本体Fig. 1 is a plan view of the cantilever substrate, Fig. 2 is an enlarged view of the same part, Fig. 3 shows the state of laser doping, Fig. 4 shows the assembled state of the cantilever, and Fig. 5 shows the bridge circuit of the strain gauge. 6 are circuit diagrams of conventional adjustment examples. 1-board 21, 22.23.24-11 strain gauge (resistor) 3.
・-Electrode 4-Weight 5-Device body
Claims (2)
よる歪ゲージを形成してなる歪抵抗装置に於いて、歪ゲ
ージの一部の不純物ドープ量を変化させ、前記ブリッジ
回路を電気的に平衡せしめたことを特徴とする歪抵抗装
置。(1) In a strain resistance device in which a strain gauge is formed by a polysilicon thin film bridge-connected on a strain body, the amount of impurity doping in a part of the strain gauge is changed to electrically balance the bridge circuit. A strain resistance device characterized by:
レーザードーピングによって歪ゲージの一部の不純物の
ドープ量を変化せしめてなることを特徴とする歪抵抗装
置。(2) The strain resistance device according to claim 1, wherein the amount of impurity doped in a part of the strain gauge is changed by selective laser doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20267890A JPH0486505A (en) | 1990-07-31 | 1990-07-31 | Strain resistance device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20267890A JPH0486505A (en) | 1990-07-31 | 1990-07-31 | Strain resistance device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0486505A true JPH0486505A (en) | 1992-03-19 |
Family
ID=16461346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20267890A Pending JPH0486505A (en) | 1990-07-31 | 1990-07-31 | Strain resistance device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0486505A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371747A (en) * | 2015-12-04 | 2016-03-02 | 浙江工业大学 | Laterally-distributed six-sensitive-grid full-bridge metal foil gauge capable of measurement of double-side outer lateral partial derivatives |
| CN105588510A (en) * | 2015-12-04 | 2016-05-18 | 浙江工业大学 | Axially distributed six-sensitive grid full-bridge three-interdigital metal strain gauge capable of measuring outer axial partial derivatives of double side pieces |
-
1990
- 1990-07-31 JP JP20267890A patent/JPH0486505A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371747A (en) * | 2015-12-04 | 2016-03-02 | 浙江工业大学 | Laterally-distributed six-sensitive-grid full-bridge metal foil gauge capable of measurement of double-side outer lateral partial derivatives |
| CN105588510A (en) * | 2015-12-04 | 2016-05-18 | 浙江工业大学 | Axially distributed six-sensitive grid full-bridge three-interdigital metal strain gauge capable of measuring outer axial partial derivatives of double side pieces |
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