JPH0485857A - Fabrication of semiconductor device package and bonding member - Google Patents
Fabrication of semiconductor device package and bonding memberInfo
- Publication number
- JPH0485857A JPH0485857A JP2198785A JP19878590A JPH0485857A JP H0485857 A JPH0485857 A JP H0485857A JP 2198785 A JP2198785 A JP 2198785A JP 19878590 A JP19878590 A JP 19878590A JP H0485857 A JPH0485857 A JP H0485857A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- casing
- bonding
- lid
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000012790 adhesive layer Substances 0.000 claims abstract description 56
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 11
- 125000006850 spacer group Chemical group 0.000 claims abstract description 11
- 238000007599 discharging Methods 0.000 claims description 6
- 230000003749 cleanliness Effects 0.000 abstract description 12
- 238000007789 sealing Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005304 joining Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000012945 sealing adhesive Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はクリーン度が高く、耐湿性に優れた気密封止型
の半導体装置パッケージ、特に半導体素子や透光部への
異物の付着、および水分の侵入を防止した半導体装置パ
ッケージの製造方法、ならびに半導体装置パッケージ用
接合部材に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a hermetically sealed semiconductor device package that is highly clean and has excellent moisture resistance, particularly for preventing foreign matter from adhering to semiconductor elements or transparent parts, and The present invention relates to a method for manufacturing a semiconductor device package that prevents moisture from entering, and a bonding member for a semiconductor device package.
ＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖｉｃｅ
）、ＭＯＳ（Ｍｅｔａｌ ＯｘｉｄｅＳｅｍｉｃｏｎｄ
ｕｃｔｏｒ）、ＣＰＤ（Ｃｈａｒｇｅ Ｐｒｉｍｍｉｎ
ｇ Ｄｅｖｉｃｅ）等の固体撮像素子、およびＥＰＲＯ
Ｍ（Ｅｒａｓａｂｌｅ ａｎｄＰｒｏｇｒａｍｍａｂｌ
ｅ／Ｒｅａｄ ０ｎｌｙ Ｍａｍｏｒｙ）等の光による
書込、消去可能なメモリーなど、光学特性を有する半導
体素子を用いた半導体装置には、気密封止性、特にクリ
ーン度および耐湿性が要求される。CCD (Charge Coupled Device)
), MOS (Metal Oxide Semicond
uctor), CPD (Charge Primmin
solid-state imaging devices such as G Device), and EPRO
M (Erasable and Programmable
Semiconductor devices using semiconductor elements having optical properties, such as memories that can be written and erased by light such as e/Read Only Memory, are required to have airtight sealability, especially cleanliness and moisture resistance.
一般に半導体装置では、ゴミ等の異物や水分が入らない
ように気密封止性が要求されるが、特に光学特性を有す
る半導体装置では、光透過性が要求され、半導体素子や
リッド等の透光部にゴミ等の異物が付着すると、電気お
よび光学特性が阻害されるので、気密封止性、特にクリ
ーン度が要求される。また水分が結露して光透過率を低
下させるのを防止するため、特に耐湿性が要求される６
第５図は光学特性を有する半導体装置の断面図である。Semiconductor devices generally require airtight sealing to prevent foreign matter such as dust and moisture from entering, but semiconductor devices with optical properties in particular require light transmission. If foreign matter such as dust adheres to the part, the electrical and optical properties will be impaired, so airtight sealability, especially cleanliness, is required. In addition, moisture resistance is particularly required to prevent moisture from condensing and reducing light transmittance6.
FIG. 5 is a sectional view of a semiconductor device having optical characteristics.
図において、１は半導体装置であり、箱型のケーシング
２内に形成されたダイパッド３に、半導体素子（ＩＣチ
ップ）４が固着されて、ボンディングワイヤ５によりリ
ード６に接続されている。In the figure, 1 is a semiconductor device, and a semiconductor element (IC chip) 4 is fixed to a die pad 3 formed in a box-shaped casing 2, and connected to leads 6 by bonding wires 5.
そして、ケーシング２の開口部に、リッド（蓋）７が気
密封止用の接着剤層８により接着され、気密状に封止さ
れて封止空間９を形成し、パッケージ１０が形成されて
いる。A lid 7 is bonded to the opening of the casing 2 with an adhesive layer 8 for airtight sealing, forming a sealed space 9 and forming a package 10. .
このような半導体装ｗ１では、パッケージ１０の内部に
ＩＩａ以上の異物があると、半導体素子４上の微細電極
パターンを短絡させ、特に１０４以上の異物は半導体素
子４の画素を覆い、いずれの場合も故障または像の不良
が生じる。また内部に水分があると、リッド７等に結露
して光透過率が低下する。In such a semiconductor device w1, if there is a foreign substance of IIa or more inside the package 10, the fine electrode pattern on the semiconductor element 4 will be short-circuited, and in particular, a foreign substance of 104 or more will cover the pixels of the semiconductor element 4. Failure or defective images may also occur. Furthermore, if there is moisture inside, dew condenses on the lid 7 and the like, reducing light transmittance.
第６図は従来の接合部材を示す断面図である。FIG. 6 is a sectional view showing a conventional joining member.
図において、接合部材１１は、リッド７の周辺部の接合
面に接着剤層８が形成されたものである。従来の接合部
材１１は、スクリーン印刷により接着剤層８が形成され
ているため、接着剤層８の横断面形状は台形ないし長方
形になっている。In the figure, the bonding member 11 has an adhesive layer 8 formed on the bonding surface of the periphery of the lid 7. Since the adhesive layer 8 of the conventional bonding member 11 is formed by screen printing, the cross-sectional shape of the adhesive layer 8 is trapezoidal or rectangular.
従来の半導体装置パッケージの製造方法は、半導体素子
４およびリート６を装着したケーシング２の接合面に、
第６図の接合部材１１の接着剤層８を対向させて圧着し
、加熱、加圧により接着剤層８を硬化させてパッケージ
１０を形成する。In the conventional method for manufacturing a semiconductor device package, a bonding surface of a casing 2 on which a semiconductor element 4 and a REIT 6 are mounted,
The adhesive layers 8 of the bonding member 11 shown in FIG. 6 are pressed against each other, and the adhesive layers 8 are cured by heating and pressure to form the package 10.
しかしながら、このような従来の半導体装置パッケージ
１０の製造方法では、接合部材１１の接着剤層８の横断
面形状が台形ないし長方形となっているため、これをケ
ーシング２の接合面に圧着して硬化させる際、溶剤等の
ガスが接着剤層８から放出されにくく、作業性に劣ると
ともに、接着剤層８から発生する溶剤その他のガスおよ
び空気が接着界面に残留して、気密封止性が低下し、耐
湿性が悪くなりやすい、また接着剤層８の形成はスクリ
ーン印刷によって行われるため、スクリーン表面のコー
テイング材の剥離により生じるゴミ等の異物がリッド７
に付着したままパッケージ１０内に封止されたり、ある
いは接合面以外の部分に印刷された接着剤層が剥離して
異物となって、クリーン度を低下させやすいなどの問題
点がある。However, in such a conventional manufacturing method of the semiconductor device package 10, since the cross-sectional shape of the adhesive layer 8 of the bonding member 11 is trapezoidal or rectangular, it is pressed onto the bonding surface of the casing 2 and cured. When bonding, gases such as solvents are difficult to release from the adhesive layer 8, resulting in poor workability, and the solvents, other gases, and air generated from the adhesive layer 8 remain at the adhesive interface, resulting in poor airtight sealing. However, since the adhesive layer 8 is formed by screen printing, foreign matter such as dust generated by peeling off the coating material on the screen surface can easily deteriorate the moisture resistance.
There are problems in that the adhesive layer may be sealed inside the package 10 while remaining attached to the adhesive layer, or the adhesive layer printed on areas other than the bonding surface may peel off and become foreign matter, resulting in a decrease in cleanliness.
本発明の目的は、上記のような問題点を解決するため、
作業性および接合後の気密封止性に優れ、特に耐湿性お
よびクリーン度の高いパッケージが得られる半導体装置
パッケージの製造方法、ならびにこのような半導体装置
パッケージの製造に用いる接合部材を提供することであ
る。The purpose of the present invention is to solve the above problems,
By providing a method for manufacturing a semiconductor device package that provides a package with excellent workability and airtight sealability after bonding, and particularly high moisture resistance and cleanliness, and a bonding member used for manufacturing such a semiconductor device package. be.
本発明は次の半導体装置パッケージの製造方法および接
合部材である。The present invention provides the following semiconductor device package manufacturing method and bonding member.
（１）パッケージを形成するケーシングと、このケーシ
ングの開口部に接合されて封止空間を形成するリッドと
、前記ケーシングおよびリッド間に形成された接着剤層
とからなる半導体装置パッケージの製造方法において、
前記ケーシングもしくはリッドに接合されるリッド、ケ
ーシングまたはスペーサの接合面に横断面円弧状の接着
剤層を形成した接合部材を、ケーシングまたはリッドと
接合してパッケージを形成することを特徴とする半導体
装置パッケージの製造方法。(1) A method for manufacturing a semiconductor device package comprising a casing forming a package, a lid joined to an opening of the casing to form a sealed space, and an adhesive layer formed between the casing and the lid. ,
A semiconductor device characterized in that a package is formed by bonding a lid to be bonded to the casing or lid, and a bonding member in which an adhesive layer having an arcuate cross section is formed on the bonding surface of the casing or spacer to the casing or lid. How the package is manufactured.
（２）ディスペンサーにより接着剤を吐出して接着剤層
を接合部材に形成するようにした上記（１）記載の半導
体装置パッケージの製造方法。(2) The method for manufacturing a semiconductor device package according to (1) above, wherein the adhesive layer is formed on the bonding member by discharging the adhesive using a dispenser.
（３）ケーシングまたはリッドと接合して封止空間を形
成する半導体装置パッケージを製造するための接合部材
であって、リッド、ケーシングまたはスペーサの接合面
に横断面円弧状に形成された接着剤層を有することを特
徴とする半導体装置パッケージ用接合部材。(3) A bonding member for manufacturing a semiconductor device package that is bonded to a casing or a lid to form a sealed space, the adhesive layer having an arcuate cross section on the bonding surface of the lid, casing, or spacer. A bonding member for a semiconductor device package, comprising:
（４）接着剤層がディスペンサーにより接着剤を吐出し
て形成されたものである上記（３）記載の半導体装置パ
ッケージ用接合部材。(4) The bonding member for a semiconductor device package according to (3) above, wherein the adhesive layer is formed by discharging an adhesive from a dispenser.
パッケージを形成するケーシングは、半導体素子の被封
止物を収容できる構造のものであればよく、その開口部
にリッドが接合され、その接合面に気密封止用の接着剤
層が形成されるようになっている。ケーシングおよびリ
ッドの材質としては制限はなく、プラスチック、セラミ
ックス、ガラス、金属など、任意のものが採用可能であ
る。接着剤層としては、ケーシングとリッドを気密封止
状に接着する接着剤であればよく、例えばエポキシ系、
アクリル系、フェノール系、ウレタン系、シリコーン系
、ゴム系の樹脂またはホットメルト系の樹脂などが使用
できるが、特にエポキシ系の樹脂接着剤が好ましい。The casing forming the package may have a structure that can accommodate the semiconductor element to be sealed, and a lid is bonded to the opening of the casing, and an adhesive layer for airtight sealing is formed on the bonding surface. It looks like this. There are no restrictions on the materials of the casing and lid, and any materials such as plastic, ceramics, glass, and metal can be used. The adhesive layer may be any adhesive that can hermetically bond the casing and lid, such as epoxy,
Acrylic, phenol, urethane, silicone, rubber, or hot melt resins can be used, and epoxy resin adhesives are particularly preferred.
本発明の半導体装置パッケージ用接合部材は、ケーシン
グまたはリッドと接合して気密封止型の半導体装置パッ
ケージを形成する接合部材であって、リッド、ケーシン
グまたはスペーサの接合面に気密封止用の接着剤層が横
断面円弧状に形成されたものである。このような接合部
材としては。The bonding member for a semiconductor device package of the present invention is a bonding member that is bonded to a casing or a lid to form a hermetically sealed semiconductor device package, and includes adhesive for hermetically sealing the bonding surface of the lid, casing, or spacer. The agent layer is formed to have an arcuate cross section. As such a joining member.
リッドに接着剤層を形成したものが一般的であるが、ケ
ーシングに形成したものでもよく、場合によってはケー
シングとリッド間に挿入されるスペーサの両面に接着剤
層を形成したものでもよい。Generally, an adhesive layer is formed on the lid, but it may be formed on the casing, or in some cases, an adhesive layer may be formed on both sides of a spacer inserted between the casing and the lid.
横断面円弧状の接着剤層を形成するには、ディスペンサ
ーから接着剤を定量吐出しながら、リッド、ケーシング
またはスペーサの接合面に沿って、ロボット等によりデ
ィスペンサーを移動させ、接合面に接着剤層を形成する
。ディスペンサーから吐出された接着剤は１表面張力に
より横断面円弧状の接着剤層を形成する。To form an adhesive layer with an arcuate cross section, a robot or the like moves the dispenser along the bonding surface of the lid, casing, or spacer while dispensing a fixed amount of adhesive from the dispenser, and deposits the adhesive layer on the bonding surface. form. The adhesive discharged from the dispenser forms an adhesive layer having an arcuate cross section due to surface tension.
こうして形成された接合部材はそのままりラドまたはケ
ーシングと接合してパッケージの形成に用いることがで
きるが、別の場所または時間にパッケージを形成する場
合は、接着剤を乾燥させて。The bonding member thus formed can be used as is to form a package by bonding it to the rad or casing; however, if the package is to be formed at another location or time, the adhesive may be dried.
部分硬化物またはプレポリマーとしておき、リッド、ケ
ーシングまたはスペーサと接合する段階で完全硬化させ
て気密封止接着剤層を形成することができる。It can be left as a partially cured product or a prepolymer and completely cured at the stage of joining with the lid, casing or spacer to form an airtight sealing adhesive layer.
〔作 用〕
本発明の半導体装置パッケージ用接合部材は、リッド、
ケーシングまたはスペーサの接合面に、ディスペンサー
から接着剤を吐出して接着剤層を形成して製造される。[Function] The bonding member for a semiconductor device package of the present invention has a lid,
It is manufactured by discharging adhesive from a dispenser to form an adhesive layer on the joint surface of the casing or spacer.
このとき接着剤層は必要な場所に正確に形成できるから
、従来のように余分のものが剥離してゴミとなり、クリ
ーン度を低下させることはない。At this time, since the adhesive layer can be formed exactly where it is needed, there is no need for excess material to peel off and become dust, which degrades the cleanliness, as in the case of the conventional method.
本発明の半導体装置パッケージの製造方法は、半導体素
子等の被封止物を収容したケーシングまたはリッドの接
合面に、上記により得られた接合部材の接着剤層を対向
させて圧着し、加熱、加圧により接着剤層を硬化させ、
気密封止型の半導体装置パッケージを形成する。The method for manufacturing a semiconductor device package of the present invention includes pressing the adhesive layer of the bonding member obtained above against the bonding surface of a casing or a lid containing an object to be sealed such as a semiconductor element, heating, The adhesive layer is cured by applying pressure.
A hermetically sealed semiconductor device package is formed.
このとき接合部材の接着剤層は横断面円弧状になってお
り、その頂部がケーシングまたはリッドに当った状態で
加熱、加圧されると硬化するため。At this time, the adhesive layer of the bonding member has an arcuate cross section, and it hardens when heated and pressurized while the top part is in contact with the casing or lid.
接着剤層から溶剤等のガスが揮散しやすく、硬化に要す
る時間が短くなって１作業性が良くなるとともに、放出
されたガスや空気が残留しにくく、気密封止性の高いパ
ッケージが得られる。Gases such as solvents can easily volatilize from the adhesive layer, shortening the time required for curing, improving workability, and making it difficult for released gases and air to remain, resulting in a highly airtight package. .
こうして形成された気密封止型の半導体装置パッケージ
は、接合面が接着剤層により気密封止状に接着されてい
るので、ゴミ、その他の異物および水分の侵入が防止さ
れ、気密封止性、特に耐湿性およびクリーン度が高くな
る。In the thus formed hermetically sealed semiconductor device package, the bonding surfaces are hermetically sealed with an adhesive layer, which prevents the intrusion of dust, other foreign matter, and moisture, and improves hermetic sealability. In particular, moisture resistance and cleanliness are improved.
以下、本発明を図面の実施例について説明する。 Hereinafter, the present invention will be described with reference to embodiments shown in the drawings.
第１図は実施例の半導体装置パッケージの製造方法を示
す分解断面図、第２図は半導体装置パッケージ用接合部
材の下面図、第３図はそのＡ−Ａ断面図、第４図は半導
体装置パッケージ用接合部材の製造方法を示す断面図で
あり、第５図および第６図と同一符号は同一または相当
部分を示す。FIG. 1 is an exploded sectional view showing a method for manufacturing a semiconductor device package according to an embodiment, FIG. 2 is a bottom view of a bonding member for a semiconductor device package, FIG. 3 is a sectional view taken along line A-A, and FIG. 4 is a semiconductor device FIG. 6 is a cross-sectional view showing a method of manufacturing a bonding member for a package, in which the same reference numerals as in FIGS. 5 and 6 indicate the same or corresponding parts.
第１図ないし第４図において、接合部材１１は、透明な
材料からなるリッド（蓋）７の裏面の周辺部に形成され
る接合面の全周にわたって横断面円弧状の接着剤層８が
形成されている。In FIGS. 1 to 4, the bonding member 11 has an adhesive layer 8 having an arc-shaped cross section over the entire circumference of the bonding surface formed on the periphery of the back surface of a lid 7 made of a transparent material. has been done.
第４図において、１２はディスペンサーであり。In FIG. 4, 12 is a dispenser.
円筒状のリザーバ１３内に貯留された接着剤１４が、ノ
ズル１５から定量吐出されるようになっている。Adhesive 14 stored in a cylindrical reservoir 13 is discharged in a fixed amount from a nozzle 15.
上記の接合部材１１は、リッド７の接合面に、第４図に
示すように、ディスペンサー１２から接着剤１４を吐出
して接着剤層８を形成して製造される。The bonding member 11 described above is manufactured by discharging an adhesive 14 from a dispenser 12 to form an adhesive layer 8 on the bonding surface of the lid 7, as shown in FIG.
このとき接着剤層８は必要な場所に正確に形成できるか
ら、従来のように余分のものが剥離してゴミとなり、ク
リーン度を低下させることはない。At this time, since the adhesive layer 8 can be formed precisely at the required location, the excess material does not peel off and become dust, which degrades the cleanliness, as in the conventional case.
半導体装置パッケージ１０の製造方法は、第１図に示す
ように半導体素子４、リード６等の被封止物を収容した
ケーシング２の接合面に、上記により得られた接合部材
１１の接着剤層８を対向させて圧着し、加熱、加圧によ
り接着剤層８を硬化させ、第５図に示す気密封止型のパ
ッケージ１０を形成する。As shown in FIG. 1, the method for manufacturing the semiconductor device package 10 includes applying an adhesive layer of the bonding member 11 obtained as described above to the bonding surface of the casing 2 that houses objects to be sealed such as the semiconductor element 4 and the leads 6. 8 are opposed to each other and pressed together, and the adhesive layer 8 is cured by heating and pressure to form a hermetically sealed package 10 shown in FIG.
このとき接合部材１１の接着剤層８は横断面円弧状にな
っており、その頂部がケーシング２の接合面に当った状
態で加熱、加圧され、その後硬化するため、接着剤層８
から溶剤等のガスが揮散しやすく、硬化に要する時間が
短くなって、作業性が良くなるとともに、放出されたガ
スや空気が残留しにくく、気密封止性の高いパッケージ
１０が得られる。At this time, the adhesive layer 8 of the bonding member 11 has an arcuate cross section, and is heated and pressurized with its top portion in contact with the bonding surface of the casing 2, and then cured, so that the adhesive layer 8
Gases such as solvents are easily volatilized, the time required for curing is shortened, workability is improved, and the released gas and air are less likely to remain, resulting in a package 10 with high hermetic sealability.
こうして形成された気密封止型の半導体装置パッケージ
１０は、接合面が接着剤層８により気密封止状に接着さ
れているので、ゴミ、その他の異物および水分の侵入が
防止され、気密封止性、特に耐湿性およびクリーン度が
高くなり、異物の付着や水分の結露がなくなる。In the thus formed hermetically sealed semiconductor device package 10, the bonding surface is hermetically sealed by the adhesive layer 8, so that the intrusion of dust, other foreign matter, and moisture is prevented, and the airtight seal is achieved. In particular, moisture resistance and cleanliness are improved, and there is no adhesion of foreign matter or moisture condensation.
なお、以上の実施例は光学特性を有する半導体装置に関
するものであったが、一般の半導体装置の気密封止パッ
ケージ、あるいは他の被封止物の気密封止パッケージに
も同様に適用可能である。Although the above embodiments are related to semiconductor devices having optical characteristics, they are equally applicable to hermetically sealed packages for general semiconductor devices or hermetically sealed packages for other objects to be sealed. .
また接合部材１１として、リッド７に接着剤層８を形成
した例を示したが、ケーシング２またはスペーサに接着
剤層８を形成したものを接合部材１１とすることもでき
る。Further, although an example in which the adhesive layer 8 is formed on the lid 7 is shown as the bonding member 11, the bonding member 11 may also be one in which the adhesive layer 8 is formed on the casing 2 or the spacer.
以上の通り、本発明によれば、接合部材に横断面円弧状
の接着剤層を形成し、ケーシングまたはリッドと接合し
てパッケージを形成するようにしたので、作業性および
接合後の気密封止性に優れ。As described above, according to the present invention, an adhesive layer having an arc-shaped cross section is formed on the bonding member, and the adhesive layer is bonded to the casing or lid to form a package, which improves workability and improves airtight sealing after bonding. Excellent in sex.
特に耐湿性およびクリーン度の高い半導体装置パッケー
ジを製造することができる。In particular, a semiconductor device package with high moisture resistance and high cleanliness can be manufactured.
第１図は実施例の半導体装置パッケージの製造方法を示
す分解断面図、第２図は半導体装置パッケージ用接合部
材の下面図、第３図はそのＡ−Ａ断面図、第４図は半導
体装置パッケージ用接合部材の製造方法を示す断面図、
第５図は半導体装置の断面図、第６図は従来の接合部材
を示す断面図である。
各図中、同一符号は同一または相当部分を示し、１は半
導体装置、２はケーシング、３はダイパッド、４は半導
体素子、５はボンディングワイヤ、６はリード、７はリ
ッド、８は接着剤層、９は封止空間、１０はパッケージ
、１１は接合部材、１２はディスペンサー、１４は接着
剤である。
代理人 弁理士 柳 原 成
第２図
１：半導体装置
２：ケーシング
３：ダイパッド
４：半導体素子
５：ボンディングワイヤ
６：リード
７：リッド
８：接着剤層
９：封止空間
１０：パッケージ
１１：接合部材
１２：ディスペンサー
１４：接着剤
第１図FIG. 1 is an exploded sectional view showing a method for manufacturing a semiconductor device package according to an embodiment, FIG. 2 is a bottom view of a bonding member for a semiconductor device package, FIG. 3 is a sectional view taken along line A-A, and FIG. 4 is a semiconductor device A cross-sectional view showing a method of manufacturing a bonding member for a package,
FIG. 5 is a sectional view of a semiconductor device, and FIG. 6 is a sectional view of a conventional bonding member. In each figure, the same reference numerals indicate the same or equivalent parts, 1 is a semiconductor device, 2 is a casing, 3 is a die pad, 4 is a semiconductor element, 5 is a bonding wire, 6 is a lead, 7 is a lid, 8 is an adhesive layer , 9 is a sealed space, 10 is a package, 11 is a joining member, 12 is a dispenser, and 14 is an adhesive. Agent Patent Attorney Sei Yanagihara Figure 2 1: Semiconductor device 2: Casing 3: Die pad 4: Semiconductor element 5: Bonding wire 6: Lead 7: Lid 8: Adhesive layer 9: Sealing space 10: Package 11: Bonding Member 12: Dispenser 14: Adhesive Figure 1
Claims (4)
ングの開口部に接合されて封止空間を形成するリッドと
、前記ケーシングおよびリッド間に形成された接着剤層
とからなる半導体装置パッケージの製造方法において、
前記ケーシングもしくはリッドに接合されるリッド、ケ
ーシングまたはスペーサの接合面に横断面円弧状の接着
剤層を形成した接合部材を、ケーシングまたはリッドと
接合してパッケージを形成することを特徴とする半導体
装置パッケージの製造方法。(1) A method for manufacturing a semiconductor device package comprising a casing forming a package, a lid joined to an opening of the casing to form a sealed space, and an adhesive layer formed between the casing and the lid. ,
A semiconductor device characterized in that a package is formed by bonding a lid to be bonded to the casing or lid, and a bonding member in which an adhesive layer having an arcuate cross section is formed on the bonding surface of the casing or spacer to the casing or lid. How the package is manufactured.
を接合部材に形成するようにした請求項（１）記載の半
導体装置パッケージの製造方法。(2) The method for manufacturing a semiconductor device package according to claim (1), wherein the adhesive layer is formed on the bonding member by discharging the adhesive using a dispenser.
成する半導体装置パッケージを製造するための接合部材
であって、リッド、ケーシングまたはスペーサの接合面
に横断面円弧状に形成された接着剤層を有することを特
徴とする半導体装置パッケージ用接合部材。(3) A bonding member for manufacturing a semiconductor device package that is bonded to a casing or a lid to form a sealed space, the adhesive layer having an arcuate cross section on the bonding surface of the lid, casing, or spacer. A bonding member for a semiconductor device package, comprising:
て形成されたものである請求項（３）記載の半導体装置
パッケージ用接合部材。(4) The bonding member for a semiconductor device package according to claim (3), wherein the adhesive layer is formed by discharging adhesive from a dispenser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19878590A JP2890731B2 (en) | 1990-07-26 | 1990-07-26 | Method of manufacturing semiconductor device package and bonding member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19878590A JP2890731B2 (en) | 1990-07-26 | 1990-07-26 | Method of manufacturing semiconductor device package and bonding member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0485857A true JPH0485857A (en) | 1992-03-18 |
| JP2890731B2 JP2890731B2 (en) | 1999-05-17 |
Family
ID=16396875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19878590A Expired - Lifetime JP2890731B2 (en) | 1990-07-26 | 1990-07-26 | Method of manufacturing semiconductor device package and bonding member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890731B2 (en) |
-
1990
- 1990-07-26 JP JP19878590A patent/JP2890731B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2890731B2 (en) | 1999-05-17 |
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