JPH0485321A - Sealing resin composition and semiconductor device sealed therewith - Google Patents
Sealing resin composition and semiconductor device sealed therewithInfo
- Publication number
- JPH0485321A JPH0485321A JP20009990A JP20009990A JPH0485321A JP H0485321 A JPH0485321 A JP H0485321A JP 20009990 A JP20009990 A JP 20009990A JP 20009990 A JP20009990 A JP 20009990A JP H0485321 A JPH0485321 A JP H0485321A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- integer
- resin composition
- resin
- tables
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 29
- 239000011342 resin composition Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000005011 phenolic resin Substances 0.000 claims abstract description 23
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229920001568 phenolic resin Polymers 0.000 claims description 12
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 9
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 6
- -1 8-diazabicyclo[5,0,4]undecene Chemical compound 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 8
- 229920003986 novolac Polymers 0.000 abstract description 12
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000012778 molding material Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 6
- 239000001993 wax Substances 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 125000004663 dialkyl amino group Chemical group 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- KZMAWJRXKGLWGS-UHFFFAOYSA-N 2-chloro-n-[4-(4-methoxyphenyl)-1,3-thiazol-2-yl]-n-(3-methoxypropyl)acetamide Chemical compound S1C(N(C(=O)CCl)CCCOC)=NC(C=2C=CC(OC)=CC=2)=C1 KZMAWJRXKGLWGS-UHFFFAOYSA-N 0.000 description 1
- FHNCCAGEZMNIHZ-UHFFFAOYSA-N 3,4,5,5a,6,7,8,9-octahydro-2h-1,2-benzodiazepine Chemical compound N1CCCC2CCCCC2=N1 FHNCCAGEZMNIHZ-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Chemical group 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
「発明の目的〕
(産業上の利用分野)
本発明は、成形性が良く耐湿性、半田耐熱性に優れた封
止用樹脂組成物及び半導体封止装置に関する。DETAILED DESCRIPTION OF THE INVENTION OBJECTS OF THE INVENTION (Industrial Field of Application) The present invention relates to a sealing resin composition and a semiconductor sealing device that have good moldability and excellent moisture resistance and soldering heat resistance.
(従来の技術)
近年、半導体装置において、薄いパッケージの実用化か
推進されている。 例えは集積回路におけるフラットパ
ッケージや、S OP (5lall out−ne
pachage) 、T S OP (thin sn
+all outlinepachage ) 、また
パワートランジスタにおける絶縁型〈アイソレーション
タイプ)のパッケージ等は、半導体素子の上面や絶縁型
パッケージの裏面で、約0.1〜0.5n+Il程度と
いう薄肉の部分に樹脂を充填しなければならなくなって
いる。 一方、表面実装型のパッケージは、それを回路
基板に取り付ける場合に半田浸漬方式や半田リフロ一方
式か採用され、薄いパッケージの封止樹脂にとって一層
厳しい環境になっている6
従来の封止樹脂は、ノボラック型エポキシ樹脂、ノボラ
ック型フェノール樹脂、シリカ粉末およびその樹脂に適
した通常の硬化促進剤からなるものであるが、この従来
の封止樹脂で封止すると、薄肉の部分に樹脂が充填され
ず巣やフクロを生じる等成形性か悪く、耐湿性の低下や
外観不良を生じる欠点があった。 また、上記従来の封
止樹脂で封止した半導体装置は、装置全体の半田浴浸漬
等を行うと耐湿性か低下するという欠点かあった。(Prior Art) In recent years, the practical use of thin packages has been promoted in semiconductor devices. For example, flat packages in integrated circuits, SOP (5 lall out-ne
pachage), T S OP (thin sn
+all outline package), and insulation type packages for power transistors, etc., fill a thin part of about 0.1 to 0.5n+Il with resin on the top surface of the semiconductor element or the back surface of the insulation type package. It has become necessary. On the other hand, surface-mounted packages use a solder dipping method or a solder reflow method when attaching them to a circuit board, creating an even harsher environment for the sealing resin of thin packages6. , a novolac type epoxy resin, a novolac type phenolic resin, silica powder, and a normal curing accelerator suitable for the resin. When encapsulated with this conventional sealing resin, the thin part is filled with resin. It has disadvantages such as poor moldability such as the formation of cavities and bags, and a decrease in moisture resistance and poor appearance. Further, the semiconductor device sealed with the conventional sealing resin described above has a disadvantage in that moisture resistance decreases when the entire device is immersed in a solder bath.
特に吸湿した半導体装置を浸漬した場合には、封止樹脂
と半導体素子、封止樹脂とリードフレームとの間の剥か
れや、内部樹脂クラックか生じて著しい耐湿劣化を起こ
し、電極の腐食による断線や水分によるリーク電流を生
じる。 その結果、半導体装置は長期間の信頼性を保証
することかできないという欠点かあった。In particular, when a semiconductor device that has absorbed moisture is immersed, the sealing resin and the semiconductor element, the sealing resin and the lead frame may peel off, internal resin cracks may occur, resulting in a significant deterioration of moisture resistance, and wire breakage due to corrosion of the electrodes. leakage current due to water and moisture. As a result, semiconductor devices have had the disadvantage that long-term reliability cannot be guaranteed.
(発明が解決しようとする課題)
本発明は、上記の欠点を解消するためになされたもので
、薄肉部の成形性に優れ、また吸湿の影響か少なく、特
に半田浸漬後や半田リフロー後の耐湿性、半田耐熱性に
優れ、長期信頼性を保証できる封止用樹脂組成物及び半
導体封止装置を提供することを目的としている。(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned drawbacks, and has excellent formability in thin-walled parts, less influence of moisture absorption, and especially after solder immersion or solder reflow. The object of the present invention is to provide a sealing resin composition and a semiconductor sealing device that have excellent moisture resistance and soldering heat resistance and can guarantee long-term reliability.
「発明の構成」
(課題を解決するための手段)
本発明者らは、上記の目的を達成しようと装態研究を重
すた結果、後述するような組成物を用いることによって
、薄肉部の成形性、耐湿性、半田耐熱性に優れた封止用
樹脂組成物及び半導体封止装置か得られることを見いた
し、本発明を完成したものである6
すなわち、本発明は、
<A>次の式で示されるエポキシ樹脂
(但し、式中、nは1以上の整数を、tは0又は1以上
の整数を表す)
(B)次の一般式(I)又は(…)で示される多官能フ
ェノール樹脂
(但し、式中nは0又は1以上の整数を、RはC□H2
1,++、を、[は0又は1以上のM数を表す)(C)
ノボラック型フェノール樹脂
(D)次の一般式で示されるジアルキルアミノ1.8−
ジアザビシクロ[5,0,4]ウンデセン硬化促進(但
し、式中R’ 、R’はCn H)n ++を、nは0
又は1以上の整数を表す)
(E 、)シリカ粉末
を必須成分とし、前記(D)のジアルキルアミノ−1,
8−ジアザビシクロ(5,0,4]ウンデセン硬化促進
剤を樹脂組成物に対して0.01〜5重量%の割合に含
有してなることを特徴とする封止用樹脂組成物である。"Structure of the Invention" (Means for Solving the Problems) As a result of extensive research into device design in an attempt to achieve the above object, the present inventors have discovered that thin-walled parts can be improved by using a composition as described below. It has been found that a sealing resin composition and a semiconductor sealing device having excellent moldability, moisture resistance, and soldering heat resistance can be obtained, and the present invention has been completed.6 That is, the present invention includes the following: <A> Epoxy resin represented by the formula (wherein, n represents an integer of 1 or more, and t represents 0 or an integer of 1 or more) (B) Polymer represented by the following general formula (I) or (...) Functional phenolic resin (where n is an integer of 0 or 1 or more, R is C□H2
1, ++, [represents M number of 0 or 1 or more] (C)
Novolak type phenolic resin (D) dialkylamino 1.8- represented by the following general formula
Diazabicyclo[5,0,4]undecene curing acceleration (wherein R' and R' are CnH)n++, n is 0
or represents an integer of 1 or more) (E,) silica powder is an essential component, and the dialkylamino-1,
This is a resin composition for sealing, characterized in that it contains an 8-diazabicyclo(5,0,4]undecene curing accelerator in a proportion of 0.01 to 5% by weight based on the resin composition.
またこの封止用樹脂組成物の硬化物で、半導体装置を
封止してなることを特徴とする半導体封止装置である。Further, the present invention is a semiconductor sealing device characterized in that a semiconductor device is sealed with a cured product of this sealing resin composition.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に用いる(A)エポキシ樹脂としては、前記の式
で示されるものを使用する。 このエポキシ樹脂はグリ
シジルが四官能であり、分子中その骨格構造を有する限
り、その分子1等に制限されることはなく、広く使用す
ることができる4また、必要に応じてノボラック型エポ
キシ樹脂やエピビス系エポキシ樹脂を併用することもで
きる。As the epoxy resin (A) used in the present invention, one represented by the above formula is used. This epoxy resin has tetrafunctional glycidyl, and as long as it has the skeleton structure in the molecule, it is not limited to the molecule 1, and can be widely used4.In addition, novolak type epoxy resin Epibis epoxy resin can also be used in combination.
そして、これらのエポキシ樹脂は、単独又は2種以上使
用することができる。These epoxy resins can be used alone or in combination of two or more.
本発明に用いる(B)多官能フェノール樹脂は、前記(
I)、(n)の式で示されるとおり、ヒドロキシルがそ
れぞれ少なくとも三官能又は少なくとも四官能のフェノ
ール樹脂で、分子中に前記骨格構造を有する限り、分子
量等に特に制限されることはなく、広く使用することが
できる。 具体的な三官能フェノール樹脂および四官能
フェノール樹脂として、
等が挙げられ、これらは単独又は2種以上混合して使用
することができる。The polyfunctional phenol resin (B) used in the present invention is the above-mentioned (
As shown in the formulas I) and (n), as long as the hydroxyl is at least trifunctional or at least tetrafunctional phenolic resin and has the above-mentioned skeleton structure in the molecule, there is no particular restriction on molecular weight etc., and it can be widely used. can be used. Specific examples of trifunctional phenolic resins and tetrafunctional phenolic resins include the following, and these can be used alone or in a mixture of two or more.
本発明に用いる(C)ノボラ・ンク型フェノール樹脂と
しては、フェノール、アルキルフェノール等のフェノー
ル類と、ホルムアルデヒドあるいはパラホルムアルテヒ
ドとを反応させて得られるノボラック型フェノール樹脂
およびこれらの変性樹脂が広く使用でき、これらは単独
又は2種以上使用することができる。As the novolak type phenolic resin (C) used in the present invention, novolac type phenolic resins obtained by reacting phenols such as phenol and alkylphenols with formaldehyde or paraformaltehyde, and modified resins thereof are widely used. These can be used alone or in combination of two or more.
本発明に用いる(D)ジアルキルアミノ−1,8−ジア
ザビシクロ[5,0,4]ウンデセン硬化促進剤は、前
記の一般式を有するもので、1,8−ジアザビシクロ[
5,0,4]ウンデセン(DBUと略称される)をジア
ルキルアミノ基で買換したものである。 また、この(
D)硬化促進剤に公知のイミダゾール系促進剤、ジアル
キルアミノ基で置換しないDBU系促進剤、リン系促進
剤、その他の促進剤を併用することもできる。 <D
)硬化促進剤の配合割合は、樹脂組成物に対して0.0
1〜5重量%含有することが望ましい。 その割合が0
.01重量%未満では、樹脂組成物のゲルタイムが長く
、また硬化特性も悪く好ましくない。 5重量%を超
えると極端に流動性が悪くなり成形性に劣り、また電気
特性も悪くなり、耐湿性が劣り好ましくない。The dialkylamino-1,8-diazabicyclo[5,0,4]undecene curing accelerator (D) used in the present invention has the above general formula, and is 1,8-diazabicyclo[5,0,4]undecene.
5,0,4]undecene (abbreviated as DBU) is replaced with a dialkylamino group. Also, this (
D) As the curing accelerator, known imidazole accelerators, DBU accelerators not substituted with dialkylamino groups, phosphorus accelerators, and other accelerators can be used in combination. <D
) The blending ratio of the curing accelerator is 0.0 to the resin composition.
It is desirable to contain 1 to 5% by weight. The percentage is 0
.. If it is less than 0.01% by weight, the gel time of the resin composition is long and the curing properties are also poor, which is not preferable. If it exceeds 5% by weight, fluidity becomes extremely poor, resulting in poor moldability, as well as poor electrical properties and poor moisture resistance, which is undesirable.
本発明に用いる(E)シリカ粉末としては、般に使用さ
れているシリカ粉末か広く使用されるが、それらの中で
も不純物濃度が低く、平均粒径30μI以下のものが望
ましい。 平均粒径が30μ鵡を超えると耐湿性および
成形性が劣り好ま1−くない。As the silica powder (E) used in the present invention, commonly used silica powders are widely used, but among them, those with a low impurity concentration and an average particle size of 30 μI or less are preferable. If the average particle size exceeds 30 μm, the moisture resistance and moldability will be poor, and this is not preferred.
本発明の封止用樹脂組成物は、特定のエポキシ樹脂、多
官能フェノール樹脂、ノボラック型フェノール樹脂、ジ
アルキルアミツリ、8−ジアザビシクロ[5,0,41
ウンデセン硬化促進剤およびシリカ粉末を必須成分とす
るが、本発明の目的に反しない限度において、また必要
に応じて、例えば天然ワックス類、合成ワックス類、直
S脂肪酸の金属塩、酸アミド、エステル類、パラフィン
等の離型剤、三酸化アンチモン等の難燃剤、カーボンブ
ラック等の着色剤、シランカップリング剤、硬化促進剤
、ゴム系やシリコーン系の低応力付与剤等を適宜添加配
合することができる。The sealing resin composition of the present invention includes a specific epoxy resin, a polyfunctional phenolic resin, a novolak type phenolic resin, a dialkylamituri, 8-diazabicyclo[5,0,41
It contains an undecene curing accelerator and silica powder as essential components, but within the limits that do not contradict the purpose of the present invention, and as necessary, for example, natural waxes, synthetic waxes, metal salts of straight S fatty acids, acid amides, esters, etc. , a mold release agent such as paraffin, a flame retardant such as antimony trioxide, a colorant such as carbon black, a silane coupling agent, a curing accelerator, a rubber-based or silicone-based low stress imparting agent, etc. may be appropriately added and blended. I can do it.
本発明の封止用樹脂組成物を成形材料として調製する場
合の一般的方法は、前述した各成分、すなわち特定のエ
ポキシ樹脂、多官能フェノール樹脂、ノボラック型フェ
ノール樹脂、ジアルキルアミノ−1,8−ジアザビシク
ロ[5,0,4]ウンテセン硬化促進剤、シリカ粉末そ
の他を配合し、ミキサー等によって十分均一に混合する
。 更に熱ロールによる溶融混合処理又はニーダ等によ
る混合処理を行い、次いで冷却固化させ適当な大きさに
粉砕して成形材料とすることができる。 この成形材料
と電子部品あるいは電気部品の封止用として、また被覆
、絶縁等に適用し、優れた特性と信頼性を付与すること
ができる。The general method for preparing the sealing resin composition of the present invention as a molding material is to prepare the above-mentioned components, namely, a specific epoxy resin, a polyfunctional phenolic resin, a novolac type phenolic resin, and a dialkylamino-1,8- The diazabicyclo[5,0,4]unthecene curing accelerator, silica powder, and other ingredients are blended and mixed sufficiently uniformly using a mixer or the like. Further, the mixture can be melt-mixed using hot rolls or mixed using a kneader, etc., and then cooled and solidified and ground to an appropriate size to form a molding material. This molding material can be used for sealing electronic or electrical parts, as well as for coating, insulation, etc., and can provide excellent properties and reliability.
本発明の半導体封止装置は、上記の封止用樹脂組成物を
用いて、半導体装置を封止することにより製造すること
ができる。 封止を行う半導体装置としては、例えば、
集積回路、大規模集N回路、トランジスタ、サイリスタ
、ダイオード等で特に限定されるものではなく広く使用
できる。 封正の最も一般的な方法としては、低圧トラ
ンスファー成形法があるが、射出成形、圧縮成形、注型
等による封止も可能である。 封止用樹脂組成物は封止
の時に加熱して硬化させ、最終的にはこの組成物の硬化
物によって封止されな半導#装1か得られる。 加熱に
よる硬化は150℃以上の温度で硬化させることが望ま
しい。The semiconductor encapsulation device of the present invention can be manufactured by encapsulating a semiconductor device using the above-mentioned encapsulation resin composition. Examples of semiconductor devices to be sealed include:
It can be widely used in integrated circuits, large-scale integrated N circuits, transistors, thyristors, diodes, etc. without being particularly limited. The most common method for sealing is low-pressure transfer molding, but sealing by injection molding, compression molding, casting, etc. is also possible. The sealing resin composition is cured by heating during sealing, and finally an unsealed semiconductor device 1 is obtained by the cured product of this composition. Curing by heating is preferably performed at a temperature of 150° C. or higher.
(作用)
本発明の封止用mi組成物及び半導体封止装置は、特定
のエポキシ樹脂、多官能フェノール樹脂、ノボラック型
フェノール樹脂、ジアルキルアミノ−1,8−ジアザビ
シクロ[5,0,4]ウンデセン硬化促進剤を用いて反
応させることによって目的を達成したものである。 即
ち、ジアルキルアミノ−1゜8−ジアザビシクロ[5,
0,41ウンデセン硬化促進剤の所定量を配合し、樹脂
組成物のゲル化時間、流動性をコントロールしたので薄
肉部の充填性が良くなり耐湿性の向上とともに優れた成
形性を付与した。 また、特定のエポキシ樹脂、多官能
フェノール樹脂、ノボラック型フェノール樹脂とを反応
させることによって、カラス転移温度を上昇させ、熱時
の特性を向上させるとともに、特定のエポキシ樹脂と多
官能フェノール樹脂か含有するアルキル基は吸湿性を向
上させる。 その結果、樹脂組成物の吸湿性が少なくな
り、半田浸漬や半田リフローを行ってもm脂りラックの
発生がなくなり、耐湿性劣化がなくなるものである。(Function) The mi composition for encapsulation and the semiconductor encapsulation device of the present invention can be applied to a specific epoxy resin, a polyfunctional phenol resin, a novolac type phenol resin, dialkylamino-1,8-diazabicyclo[5,0,4]undecene This objective was achieved by reacting with a curing accelerator. That is, dialkylamino-1°8-diazabicyclo[5,
By blending a predetermined amount of a 0.41 undecene curing accelerator and controlling the gelation time and fluidity of the resin composition, filling properties in thin walled areas were improved, moisture resistance was improved, and excellent moldability was imparted. In addition, by reacting specific epoxy resins, polyfunctional phenolic resins, and novolac type phenolic resins, the glass transition temperature is raised and the properties at high temperatures are improved. The alkyl group improves hygroscopicity. As a result, the hygroscopicity of the resin composition is reduced, and even when solder immersion or solder reflow is performed, greasy racks do not occur, and deterioration of moisture resistance is eliminated.
(実施例)
次に本発明の実施例について説明するが、本発明はこれ
らの実施例によって限定されるものではない、 以下の
実施例および比較例において「%」とは「重量%」を意
味する。(Example) Next, Examples of the present invention will be described, but the present invention is not limited by these Examples. In the following Examples and Comparative Examples, "%" means "% by weight". do.
実施例 1
前記特定のエポキシ樹脂17%、前記の三官能フェノー
ル樹脂8%、ジアルキルアミノ −1,8−ジアザビシ
クロ[5,0,4]ウンデセン硬化促進剤0.3%、シ
リカ粉末74%、エステルワックス0.3%およびシラ
ンカップリング剤0.4%を常温で混合し、さらに90
〜95℃の温度で混練し、冷却した後粉砕して成形材料
(A>を製造した。Example 1 17% of the above specific epoxy resin, 8% of the above trifunctional phenol resin, 0.3% of dialkylamino-1,8-diazabicyclo[5,0,4]undecene curing accelerator, 74% of silica powder, ester 0.3% wax and 0.4% silane coupling agent were mixed at room temperature, and further 90%
The mixture was kneaded at a temperature of ~95°C, cooled, and then ground to produce a molding material (A>).
実施例 2
前記特定のエポキシ樹脂12%、前記の三官能フェノー
ル樹脂6%、ジアルキルアミノ −18−ジアザビシク
ロ[5,0,4]ウンデセン硬化促進jflI 013
%、シリカ粉末81%、エステルワックス0.3%およ
びシランカップリング剤0.4%を常温で混合し、さら
に90〜95℃の温度で混練+、、冷却j−た後粉砕+
。Example 2 12% of the above specific epoxy resin, 6% of the above trifunctional phenol resin, dialkylamino-18-diazabicyclo[5,0,4]undecene curing acceleration jflI 013
%, 81% silica powder, 0.3% ester wax and 0.4% silane coupling agent were mixed at room temperature, further kneaded at a temperature of 90 to 95°C, cooled and then ground.
.
て成形材料(B>を製造した。A molding material (B>) was produced.
比較例 1
オルソクレゾールノボラック型エポキシ樹脂17%、ノ
ボラック型フェノール樹脂8%、シリカ粉末74%、イ
ミダゾール系硬化促進i!fl10.3%、エステルワ
ックス0.3%およびシランカップリング剤0.4%を
実施例1と同様にi−て成形材料(C)を製造した。Comparative Example 1 17% orthocresol novolac type epoxy resin, 8% novolac type phenol resin, 74% silica powder, imidazole curing acceleration i! A molding material (C) was prepared in the same manner as in Example 1 using 10.3% fl, 0.3% ester wax, and 0.4% silane coupling agent.
比較例 2
オルソクレゾールノボラック型エポキシ樹脂12%、ノ
ボラック型フェノール樹脂6%、シリカ粉末81%、イ
ミダゾール系硬化促進剤0.3%、エステルワックス0
.3%およびシランカップリング剤0.4%を比較例1
と同様にして成形材料(D)を製造した。Comparative Example 2 12% orthocresol novolak epoxy resin, 6% novolak phenol resin, 81% silica powder, 0.3% imidazole curing accelerator, 0 ester wax
.. 3% and silane coupling agent 0.4% in Comparative Example 1
A molding material (D) was produced in the same manner as above.
実施例1〜2及び比較例1〜2で製造した成形材料(A
)〜(D)及びこれらを用いて製造した半導体封止装置
について、成形性及び耐湿性について試験したのでその
結果を第1表に示した。Molding materials (A
) to (D) and semiconductor encapsulation devices manufactured using these were tested for moldability and moisture resistance, and the results are shown in Table 1.
本発明はいずれも優れており、本発明のS著な効果を確
認することができた。The present invention was excellent in all cases, and the remarkable effect of the present invention on S could be confirmed.
第
表
(単位)
本1 :成形材料を用いて、175°Cの金型で100
k!77′C11’の圧力をかけスパイラルの流動圧
Mを測定した。Table (unit) Book 1: Using molding material, 100
k! A pressure of 77'C11' was applied and the flow pressure M of the spiral was measured.
*2:175°Cの熱板上で成形材料のゲル化するまで
の時間を測定した。*2: The time required for the molding material to gel was measured on a hot plate at 175°C.
ネコ:成形材料を用いて、175°Cの金型てづ00
kg/ r n 2の圧力をかけて、200μt、30
0μm、10μmのすき間を流れる流動距離を測定した
。Cat: Using molding material, mold 00 at 175°C
Applying a pressure of kg/rn2, 200μt, 30
The flow distance through gaps of 0 μm and 10 μm was measured.
*4 :成形材料を用いて、Q F P (14x 1
4X 141111)パッケージに8x8n+iのタミ
ーチップを納め、パッケージ500個の中でのチ・ツブ
1面の充填不良数を測定した。*4: Using molding material, Q F P (14 x 1
4X 141111) Tummy chips of 8x8n+i were placed in a package, and the number of filling defects on one side of the chip among 500 packages was measured.
*5 :成形材料を用いて、TO−220型パツケージ
にタミーチップを納め、パッケージ500個中での裏面
の充填不良数を測定1−な。*5: Using the molding material, place the tammy chip in a TO-220 type package and measure the number of filling defects on the back side of 500 packages.
*6 :成形材料を用いて、DIR−16ピンMO5I
Cテスト素子又はTO−220型テスト素子を封止した
半導体封止装置それぞれについてPC74気圧の条件で
アルミニウム配線のオープン不良か50%に達するまで
め時間を測定した。*6: Using molding material, DIR-16 pin MO5I
For each of the semiconductor sealing devices that sealed the C test element or the TO-220 type test element, the time required until the open failure of the aluminum wiring reached 50% was measured under the condition of 74 atmospheric pressure PC.
[発明の効果J
以上の説明および第1表から明らかなように本発明の封
止用樹脂組成物は、成形性に優れ、吸湿の影響が少なく
、半田浴浸漬後の耐湿性、半田耐熱性に優れているため
、薄肉部によく充填し、巣やフクロの発生がなく、樹脂
組成物と半導体装置あるいは樹脂組成物とリードフレー
ム間の剥がれや内部樹脂クラックの発生かなく、また電
極の腐食による断線や水分によるリーク電流の発生もな
い、優れた信頼性の高い半導体封止装置が得られた。[Effect of the invention J As is clear from the above explanation and Table 1, the encapsulating resin composition of the present invention has excellent moldability, is less affected by moisture absorption, and has excellent moisture resistance after immersion in a solder bath and soldering heat resistance. Because of its excellent performance, it can be easily filled into thin-walled areas, without forming cavities or flakes, without peeling between the resin composition and the semiconductor device or between the resin composition and the lead frame, without causing internal resin cracks, and without corrosion of electrodes. An excellent and highly reliable semiconductor encapsulation device was obtained, which did not cause wire breakage due to oxidation or leakage current due to moisture.
Claims (1)
の整数を表す) (B)次の一般式( I )又は(II)で示される多官能
フェノール樹脂 ▲数式、化学式、表等があります▼…( I ) ▲数式、化学式、表等があります▼…(II) (但し、式中nは0又は1以上の整数を、 RはC_mH_2_m_+_1を、mは0又は1以上の
整数を表す) (C)ノボラック型フェノール樹脂 (D)次の一般式で示されるジアルキルアミノ−1、8
−ジアザビシクロ[5、0、4]ウンデセン硬化促進剤 ▲数式、化学式、表等があります▼ (但し、式中R^1、R^2はC_nH_2_n_+_
1を、nは0又は1以上の整数を表す) (E)シリカ粉末 を必須成分とし、前記(D)のジアルキルアミノ−1、
8−ジアザビシクロ[5、0、4]ウンデセン硬化促進
剤を樹脂組成物に対して0.01〜5重量%の割合に含
有してなることを特徴とする封止用樹脂組成物。 2(A)次の式で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼ (但し、式中、nは1以上の整数を、mは0又は1以上
の整数を表す) (B)次の一般式( I )又は(II)で示される多官能
フェノール樹脂 ▲数式、化学式、表等があります▼( I ) ▲数式、化学式、表等があります▼(II) (但し、式中nは0又は1以上の整数を、 RはC_mH_2_m_+_1を、mは0又は1以上の
整数を表す) (C)ノボラック型フェノール樹脂 (D)次の一般式で示されるジアルキルアミノ−1、8
−ジアザビシクロ[5、0、4]ウンデセン硬化促進剤 ▲数式、化学式、表等があります▼ (但し、式中R^1、R^2はC_nH_2_n_+_
1を、nは0又は1以上の整数を表す) (E)シリカ粉末 を必須成分とし、前記(D)のジアルキルアミノ−1、
8−ジアザビシクロ[5、0、4]ウンデセン硬化促進
剤を樹脂組成物に対して0.01〜5重量%の割合に含
有した封止用樹脂組成物の硬化物で、半導体装置を封止
してなることを特徴とする半導体封止装置。[Claims] 1 (A) Epoxy resin represented by the following formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (However, in the formula, n is an integer of 1 or more, and m is 0 or an integer of 1 or more (B) Multifunctional phenolic resin represented by the following general formula (I) or (II)▲There are mathematical formulas, chemical formulas, tables, etc.▼…(I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼…( II) (However, in the formula, n represents an integer of 0 or 1 or more, R represents C_mH_2_m_+_1, and m represents an integer of 0 or 1 or more) (C) Novolac type phenolic resin (D) Represented by the following general formula dialkylamino-1,8
-Diazabicyclo[5,0,4]undecene curing accelerator▲There are mathematical formulas, chemical formulas, tables, etc.▼ (However, in the formula, R^1 and R^2 are C_nH_2_n_+_
1 and n represents an integer of 0 or 1 or more) (E) silica powder is an essential component, dialkylamino-1 of (D) above,
A sealing resin composition comprising an 8-diazabicyclo[5,0,4]undecene curing accelerator in an amount of 0.01 to 5% by weight based on the resin composition. 2 (A) Epoxy resin represented by the following formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (However, in the formula, n represents an integer of 1 or more, and m represents an integer of 0 or 1 or more) (B) Polyfunctional phenolic resin represented by the following general formula (I) or (II) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (I) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (II) (However, n in the formula represents an integer of 0 or more than 1, R represents C_mH_2_m_+_1, m represents an integer of 0 or more than 1) (C) Novolac type phenolic resin (D) Dialkyl amino-1, 8 represented by the following general formula
-Diazabicyclo[5,0,4]undecene curing accelerator▲There are mathematical formulas, chemical formulas, tables, etc.▼ (However, in the formula, R^1 and R^2 are C_nH_2_n_+_
1 and n represents an integer of 0 or 1 or more) (E) silica powder is an essential component, and the dialkylamino-1 of (D) above,
A semiconductor device is sealed with a cured product of a sealing resin composition containing an 8-diazabicyclo[5,0,4]undecene curing accelerator in a proportion of 0.01 to 5% by weight based on the resin composition. A semiconductor sealing device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20009990A JPH0485321A (en) | 1990-07-27 | 1990-07-27 | Sealing resin composition and semiconductor device sealed therewith |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20009990A JPH0485321A (en) | 1990-07-27 | 1990-07-27 | Sealing resin composition and semiconductor device sealed therewith |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0485321A true JPH0485321A (en) | 1992-03-18 |
Family
ID=16418830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20009990A Pending JPH0485321A (en) | 1990-07-27 | 1990-07-27 | Sealing resin composition and semiconductor device sealed therewith |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0485321A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495270B1 (en) | 1998-02-19 | 2002-12-17 | Hitachi Chemical Company, Ltd. | Compounds, hardening accelerator, resin composition, and electronic part device |
-
1990
- 1990-07-27 JP JP20009990A patent/JPH0485321A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495270B1 (en) | 1998-02-19 | 2002-12-17 | Hitachi Chemical Company, Ltd. | Compounds, hardening accelerator, resin composition, and electronic part device |
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