JPH03296523A - Resin composition for sealing and semiconductor device sealed therewith - Google Patents
Resin composition for sealing and semiconductor device sealed therewithInfo
- Publication number
- JPH03296523A JPH03296523A JP9755490A JP9755490A JPH03296523A JP H03296523 A JPH03296523 A JP H03296523A JP 9755490 A JP9755490 A JP 9755490A JP 9755490 A JP9755490 A JP 9755490A JP H03296523 A JPH03296523 A JP H03296523A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- sealing
- resin composition
- resin
- compsn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000007789 sealing Methods 0.000 title claims abstract description 26
- 239000011342 resin composition Substances 0.000 title claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000003822 epoxy resin Substances 0.000 claims abstract description 22
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 22
- 239000005011 phenolic resin Substances 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000000843 powder Substances 0.000 claims description 14
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 6
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 229920003986 novolac Polymers 0.000 abstract description 8
- 238000005476 soldering Methods 0.000 abstract description 8
- 239000003086 colorant Substances 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract description 2
- 239000003063 flame retardant Substances 0.000 abstract description 2
- 239000006082 mold release agent Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract 1
- 229930185605 Bisphenol Natural products 0.000 abstract 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 abstract 1
- 238000013329 compounding Methods 0.000 abstract 1
- 239000012778 molding material Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000001993 wax Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- -1 and others Substances 0.000 description 1
- QEZIKGQWAWNWIR-UHFFFAOYSA-N antimony(3+) antimony(5+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Sb+3].[Sb+5] QEZIKGQWAWNWIR-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、耐湿性、半田耐熱性に潰れた封止用樹脂組成
物および半導体封止装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a sealing resin composition with excellent moisture resistance and soldering heat resistance, and a semiconductor sealing device.
（従来の技術）
近年、半導体集積回路の分野において、高集積化、高信
頼性化の技術開発と同時に半導体装置の実装工程の自動
化が推進されている。 例えばフラットパッケージ型の
半導体装置を回路基板に取り付ける場合に、従来リード
ビン毎に半田付けを行っていたが、最近では半田浸漬方
式や半田リフロ一方式が採用されている。(Prior Art) In recent years, in the field of semiconductor integrated circuits, the automation of the mounting process of semiconductor devices has been promoted at the same time as the development of technologies for higher integration and higher reliability. For example, when attaching a flat package type semiconductor device to a circuit board, soldering was conventionally performed for each lead bin, but recently a solder dipping method or a solder reflow method has been adopted.
（発明が解決しようとする課ｊＪｉ ）従来のノボラッ
ク型などのエポキシ樹脂、ノボラック型フェノール樹脂
およびシリカ粉末からなる樹脂組成物で封止した半導体
装置は、装置全体の半田浴浸漬を行うと耐湿性が低下す
るという欠点があった。 特に吸湿した半導体装置を浸
漬すると、封止樹脂と半導体チップおよび封止樹脂とリ
ードフレームとの間の剥がれや、内部樹脂クラックが生
じて著しい耐湿性劣化を起こし、電極の腐食による断線
や水分によるリーク電流を生じ、その結果、半導体装置
は、長期間の信頼性を保証することができないという欠
点があった。(Issues to be Solved by the Invention) A semiconductor device sealed with a conventional resin composition consisting of a novolac type epoxy resin, a novolac type phenol resin, and silica powder becomes moisture resistant when the entire device is immersed in a solder bath. The disadvantage was that it decreased. In particular, if a semiconductor device that has absorbed moisture is immersed, peeling between the encapsulating resin and the semiconductor chip, between the encapsulating resin and the lead frame, and internal resin cracks will occur, resulting in a significant deterioration of moisture resistance. A leakage current is generated, and as a result, the semiconductor device has the disadvantage that long-term reliability cannot be guaranteed.
本発明は、上記の欠点を解消するためになされたもので
、吸湿の影響が少なく、特に半田浸漬後の耐湿性、半田
耐熱性に優れ、封止樹脂と半導体チップあるいは封止樹
脂とリードフレームとの剥がれや内部樹脂クラックの発
生がなく、また電極の腐食による断線や水分によるリー
ク電流の発生もなく、長期信頼性を保証できる封止用樹
脂組成物および半導体封止装置を提供しようとするもの
である。The present invention has been made in order to eliminate the above-mentioned drawbacks, and has little influence of moisture absorption, particularly excellent moisture resistance after soldering immersion, and soldering heat resistance, and is capable of connecting a sealing resin to a semiconductor chip or a sealing resin to a lead frame. An object of the present invention is to provide a resin composition for sealing and a semiconductor sealing device that can guarantee long-term reliability without peeling or internal resin cracks, and without disconnection due to electrode corrosion or leakage current due to moisture. It is something.
［発明の構成コ
（課題を解決するための手段）
本発明者らは、上記の目的を達成しようと鋭意研究を重
ねた結果、特定のエポキシ樹脂と特定の多官能フェノー
ル樹脂を用いることによって、耐湿性、半田耐熱性に優
れた樹脂組成物が得られることを見いだし、本発明を完
成したものである。[Configuration of the Invention (Means for Solving the Problems) As a result of extensive research aimed at achieving the above object, the present inventors have found that by using a specific epoxy resin and a specific polyfunctional phenol resin, The present invention was completed by discovering that a resin composition having excellent moisture resistance and soldering heat resistance can be obtained.
すなわち、本発明の封止用樹脂組成物は、（Ａ）次の一
般式で示されるエポキシ樹脂、（但し、式中１は０又は
１以上の整数を、ｎは１以上の整数をそれぞれ表す）
（Ｂ）次の一般式（Ｉ）又は（Ｉｆ）で示される多官能
フェノール樹脂、および
（但し、式中ＲはＣＩＩ Ｈ２ｍ＋１を、ｎ、ｎは０又
は１以上の整数を表す）
（Ｃ）シリカ粉末
を必須成分とし、樹脂組成物に対して前記（Ｃ）のシリ
カ粉末を５０〜９０重量％含有してなることを特徴とす
る封止用樹脂組成物である。 また、この封止用樹脂組
成物を用いて半導体素子を封止してなることを特徴とす
る半導体封止装置である。That is, the sealing resin composition of the present invention comprises (A) an epoxy resin represented by the following general formula, (wherein 1 represents 0 or an integer of 1 or more, and n represents an integer of 1 or more. ) (B) A polyfunctional phenolic resin represented by the following general formula (I) or (If), and (wherein, R represents CII H2m+1, and n and n represent an integer of 0 or 1 or more) (C ) A sealing resin composition comprising silica powder as an essential component and containing 50 to 90% by weight of the silica powder (C) based on the resin composition. The present invention also provides a semiconductor encapsulation device characterized in that a semiconductor element is encapsulated using this encapsulation resin composition.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に用いる（Ａ）エポキシ樹脂としては、次の一般
式で示されるものであれば
（但し、式中Ｉは０又は１以上の整数を、ｎは１以上の
整数をそれぞれ表す）
分子量など特に制限されることはなく、広く使用するこ
とができる。 また、このエポキシ樹脂にノボラック型
エポキシ樹脂やエピビス系エポキシ樹脂を併用すること
ができる。The epoxy resin (A) used in the present invention may be one represented by the following general formula (where I represents an integer of 0 or 1 or more, and n represents an integer of 1 or more): Molecular weight, etc. There are no particular restrictions and it can be used widely. Moreover, a novolac type epoxy resin or an epibis type epoxy resin can be used in combination with this epoxy resin.
本発明に用いる（Ｂ）多官能フェノール樹脂としては、
次の一般式で示されるもので、（但し、式中ＲはＣＢ
Ｈ２Ｈ＋１を、１．ｎは０又は１以上の整数を表す）
少なくとも三官能又は四官能のフェノール樹脂であるか
ぎり、分子構造、分子量などに制限されることなく広く
包含することができる。As the (B) polyfunctional phenol resin used in the present invention,
It is represented by the following general formula (wherein R is CB
H2H+1, 1. (n represents an integer of 0 or 1 or more) As long as it is at least a trifunctional or tetrafunctional phenol resin, it can be broadly included without being limited by its molecular structure, molecular weight, etc.
具体的な多官能フェノール樹脂としては、例え等が挙げ
られ、これらは単独又は２種以上混合して使用すること
ができる。 さらに、前記の多官能フェノール樹脂の他
に、フェノール、アルキルフェノール等のフェノール類
と、ホルムアルデヒドあるいはバラホルムアルデヒドと
を反応させて得られるノボラック型フェノール樹脂およ
びこれらの変性樹脂を混合して使用することができる。Examples of specific polyfunctional phenol resins include examples, and these can be used alone or in a mixture of two or more. Furthermore, in addition to the above-mentioned polyfunctional phenol resins, novolac-type phenol resins obtained by reacting phenols such as phenol and alkylphenols with formaldehyde or paraformaldehyde, and modified resins thereof can be mixed and used. .
本発明に用いる（Ｃ）シリカ粉末としては、般に使用さ
れているものが広く使用されるが、それらの中でも不純
物濃度が低く、平均粒径５０μｍ以下のものが好ましい
、 平均粒径が５０μｍを超えると耐湿性および成形性
が劣り好ましくない。As the silica powder (C) used in the present invention, commonly used silica powders are widely used, but among them, those with a low impurity concentration and an average particle size of 50 μm or less are preferable. If it exceeds this, moisture resistance and moldability will deteriorate, which is undesirable.
シリカ粉末の配合割合は、全体の樹脂組成物に対して５
０〜９０重量％含有することが好ましい、 その割合が
５０重量％未満では樹脂組成物の吸湿性が高く、半田浸
漬後の耐湿性に劣り、また９０重量％を超えると１ｇ７
１ｖ／Ａに流動性が悪くなり成形性に劣り好ましくない
。The blending ratio of silica powder is 5% to the total resin composition.
It is preferable to contain 0 to 90% by weight. If the proportion is less than 50% by weight, the resin composition will have high hygroscopicity and will have poor moisture resistance after solder immersion, and if it exceeds 90% by weight, 1g7
The fluidity becomes poor at 1v/A and the moldability is poor, which is not preferable.
本発明の封止用樹脂組成物は、前述した特定のエポキシ
樹脂、多官能フェノール樹脂、およびシリカ粉末を必須
成分とするが、本発明の目的に反しない限度において、
また必要に応じて、例えば天然ワックス類、合成ワック
ス類、直鎖脂肪酸の金属塩、酸アミド、エステル類、パ
ラフィンなどの離型剤、二酸化アンチモンなどの難燃剤
、カーボンブラックなどの着色剤、シランカップリング
剤、種々の硬化促進剤、ゴム系やシリコーン系の低応力
付与剤等を適宜添加・配合することができる。The sealing resin composition of the present invention contains the above-mentioned specific epoxy resin, polyfunctional phenol resin, and silica powder as essential components, but within the range not contrary to the purpose of the present invention,
In addition, if necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, mold release agents such as paraffin, flame retardants such as antimony dioxide, colorants such as carbon black, silanes, etc. Coupling agents, various curing accelerators, rubber-based or silicone-based low stress imparting agents, etc. can be added and blended as appropriate.
本発明の封止用樹脂組成物を成形材料として調製する場
合の一般的方法は、前述のエポキシ樹脂、多官能フェノ
ール樹脂、およびシリカ粉末その他を配合し、ミキサー
等によって十分均一に混合した後、さらに熱ロールによ
る溶融混合処理又はニーダ等による混合処理を行い、次
いで冷却固化させ適当な大きさに粉砕して成形材料とす
ることができる。 この成形材料を用いて半導体素子を
セットした金型内にトランスファー注入して硬化させて
本発明の半導体封止装置を製造することができる。The general method for preparing the sealing resin composition of the present invention as a molding material is to blend the above-mentioned epoxy resin, polyfunctional phenol resin, silica powder, and others, mix thoroughly and uniformly with a mixer, etc., and then Further, the mixture can be melted and mixed using hot rolls or mixed using a kneader, etc., and then cooled and solidified to be crushed into a suitable size to obtain a molding material. The semiconductor sealing device of the present invention can be manufactured by transfer-injecting this molding material into a mold in which a semiconductor element is set and curing it.
本発明の半導体封止装置は、上記の封止用樹脂組成物を
用いて、半導体素子を封止することにより容易に製造す
ることができる。 封止を行う半導体素子としては、例
えば集積回路、大規模集積回路、トランジスタ、サイリ
スタ、ダイオード等で特に限定されるものではない、
封止の最も一般的な方法としては、低圧トランスファー
成形法があるが、射出成形、圧縮成形、注型等による封
止も可能である。 封止用樹脂組成物は封止の際に加熱
して硬化させ、最終的にはこの組成物の硬化物によって
封止された半導体封止装置が得られる。 加熱による硬
化は１５０℃以上に加熱して硬化させることが望ましい
、 成形材料は半導体素子の封止の他に電子部品、ある
いは電気部品の封止また被覆・絶縁等にも使用すること
ができ、それらに優れた特性を付与することができる。The semiconductor encapsulation device of the present invention can be easily manufactured by encapsulating a semiconductor element using the above-mentioned encapsulation resin composition. Semiconductor elements to be sealed include, but are not particularly limited to, integrated circuits, large-scale integrated circuits, transistors, thyristors, diodes, etc.
The most common method for sealing is low-pressure transfer molding, but sealing by injection molding, compression molding, casting, etc. is also possible. The sealing resin composition is heated and cured during sealing, and a semiconductor sealing device sealed with a cured product of this composition is finally obtained. For curing by heating, it is desirable to cure by heating to 150°C or higher.In addition to sealing semiconductor elements, the molding material can also be used for sealed coatings and insulation of electronic parts or electrical parts. It is possible to impart excellent properties to them.
（作用）
本発明において、特定のエポキシ樹脂、特定の多官能フ
ェノール樹脂を用いることによって樹脂組成物のガラス
転移温度を上昇させ、熱機械的特性と低応力性を向上さ
せることができた。 その結果、半田浸漬、半田リフロ
ー後の樹脂クラックの発生がなくなり耐湿性劣化が減少
した封止用樹脂組成物および半導体封止装置を製造する
ことができるものである。(Function) In the present invention, by using a specific epoxy resin and a specific polyfunctional phenol resin, it was possible to increase the glass transition temperature of the resin composition and improve the thermomechanical properties and low stress properties. As a result, it is possible to produce a sealing resin composition and a semiconductor sealing device in which resin cracks do not occur after solder immersion and solder reflow, and moisture resistance deterioration is reduced.
（実施例）
次に本発明の実施例について説明するが、本発明は以下
の実施例に限定されるものではない。(Examples) Next, examples of the present invention will be described, but the present invention is not limited to the following examples.
以下の実施例および比較例において「％」とは「重量％
」を意味する。In the following Examples and Comparative Examples, "%" means "% by weight".
” means.
実施例 １
前述した特定のエポキシ樹脂１７％、次式に示した多官
能フェノール樹脂１０％、
シリカ粉末７２％、イミダゾール系硬化促進剤Ｃ，，Ｚ
Ｏ，１％、エステルワックス０．３％およびシランカッ
プリング剤０．４％を常温で混合し、さらに９０〜９５
℃で混練し、冷却した後粉砕して成形材料［Ａ］を製造
した。Example 1 17% of the specific epoxy resin mentioned above, 10% of the polyfunctional phenol resin shown in the following formula, 72% of silica powder, imidazole curing accelerator C,,Z
O, 1%, ester wax 0.3% and silane coupling agent 0.4% are mixed at room temperature, and further 90-95%
The mixture was kneaded at °C, cooled, and then ground to produce a molding material [A].
実施例 ２
実施例１で用いたエポキシ樹脂９％および多官能フェノ
ール樹脂８％、並びにオルソクレゾールノボラック型エ
ポキシ樹脂８％、シリカ粉末７４％、イミダゾール系硬
化促進剤Ｃ１７２０，１％、エステルワックス０．３％
およびシランカップリング剤０．４％を常温で混合し、
さらに９０〜９５℃で混練冷却した後、粉砕して成形材
料［Ｂ］を製造した。Example 2 9% of the epoxy resin and 8% of the polyfunctional phenol resin used in Example 1, 8% of orthocresol novolac type epoxy resin, 74% of silica powder, 1% of imidazole curing accelerator C1720, and 0.0% of ester wax. 3%
and 0.4% of silane coupling agent are mixed at room temperature,
After further kneading and cooling at 90 to 95°C, the mixture was pulverized to produce a molding material [B].
比較例 １
オルソクレゾールノボラック型エポキシ樹脂１７％、ノ
ボラック型フェノール樹脂８％、シリカ粉末７４％、硬
化促進剤０．３％、エステル系ワックス０．３％および
シランカップリング剤０．４％を混合し、実施例１と同
様にして成形材料［Ｃ］を製造した。Comparative Example 1 Mixing of 17% orthocresol novolak epoxy resin, 8% novolac phenol resin, 74% silica powder, 0.3% curing accelerator, 0.3% ester wax, and 0.4% silane coupling agent. A molding material [C] was produced in the same manner as in Example 1.
比較例 ２
エビビス型エポキシ樹脂（エポキシ当量４５０）２０％
、ノボラック型フェノール樹脂５％、シリカ粉末７４％
、硬化促進剤０．３％、エステル系ワックス０．３％お
よびシランカップリング剤０．４％を混合し、実施例１
と同様にして成形材料［Ｄ］を製造した。Comparative example 2 Ebibis type epoxy resin (epoxy equivalent: 450) 20%
, novolac type phenolic resin 5%, silica powder 74%
, 0.3% curing accelerator, 0.3% ester wax and 0.4% silane coupling agent were mixed, and Example 1
Molding material [D] was produced in the same manner as above.
こうして製造した成形材料［Ａ］〜［Ｄ］を用いて １
７０℃に加熱した金型内にトランスファー注入し、硬化
させて半導体素子を封止した半導体封止装置を製造した
。 これらの半導体装置の諸特性を試験したのでその結
果を第１表に示したが、本発明の封止用樹脂組成物およ
び半導体封止装置は耐湿性、半田耐熱性に優れており、
本発明の顕著な効果を確認することができた。Using the molding materials [A] to [D] thus produced, 1
A semiconductor sealing device was manufactured in which the semiconductor element was sealed by transfer injection into a mold heated to 70°C and cured. Various characteristics of these semiconductor devices were tested and the results are shown in Table 1. The encapsulating resin composition and semiconductor encapsulating device of the present invention have excellent moisture resistance and soldering heat resistance.
It was possible to confirm the remarkable effects of the present invention.
第１表
＊１ ニドランスファー成形によって直径５０ｎｎ、厚
さ３１１１１の成形品を作り、これを１２７°Ｃ１２，
５気圧の飽和水蒸気中に２４時間放置し、増加した重量
によって測定した。Table 1 *1 A molded product with a diameter of 50 nn and a thickness of 31111 mm was made by Nidor transfer molding, and this was heated at 127°C12.
The sample was left in saturated steam at 5 atm for 24 hours, and the weight increase was measured.
＊２：吸水率の場合と同様な成形品を作り、１７５℃で
８時間の後硬化を行い、適当な大きさの試験片とし、熱
機械分析装置を用いて測定した。*2: A molded article similar to that for water absorption was made and post-cured at 175°C for 8 hours to obtain a test piece of an appropriate size, and measured using a thermomechanical analyzer.
＊３ ： Ｊ Ｉ Ｓ−に−６９１１に準じて試験した
。*3: Tested according to JIS-6911.
＊４：成形材料を用いて、２本以上のアルミニウム配線
を有するシリコン製チップを、通常の４２アロイフレー
ムに接着し、１７５°Ｃで２分間トランスファー成形し
た後、１７５℃８時間後硬化を行った。 こうして得た
成形品を予め、４０°Ｃ１９０％ＲＨ，１００時間の吸
湿処理をした後、２５０℃の半田浴に１０秒間浸漬した
。 その後、１２７”Ｃ２，５気圧の飽和水蒸気中でプ
レッシャークツカーテストを行い、アルミニウムの腐食
による断線を不良として評価した。*4: Using a molding material, a silicon chip with two or more aluminum wirings is adhered to a regular 42 alloy frame, transfer molded at 175°C for 2 minutes, and then cured at 175°C for 8 hours. Ta. The thus obtained molded product was previously subjected to a moisture absorption treatment at 40° C., 190% RH for 100 hours, and then immersed in a 250° C. solder bath for 10 seconds. Thereafter, a pressure puller test was conducted in saturated steam at 127"C2.5 atm, and disconnection due to corrosion of aluminum was evaluated as a failure.
＊５：８ｘ８ＩＩＩｍタミーチップをＱ−ＦＰ （１４
ｘ１４ｘ１．４ｍｍ）パッケージに納め、成形材料を用
いて １７５℃で２分間トランスファー成形した後、
１７５’Ｃ，８時間後硬化を行った。*5: 8x8IIIm tummy chip Q-FP (14
x14x1.4mm) package and transfer molded using molding material at 175℃ for 2 minutes,
Post-curing was performed at 175'C for 8 hours.
こうして製造した半導体封止装置を８５℃。The semiconductor sealing device manufactured in this way was heated to 85°C.
８５％、２４時間の吸湿処理をしな後２４０″Ｃの半田
浴に１分間浸漬した。 その後、実体顕微鏡でパッケー
ジ表面を観察し、外部樹脂クラックの発生の有無を評価
した。After 85% moisture absorption treatment for 24 hours, it was immersed in a solder bath at 240''C for 1 minute.The package surface was then observed with a stereomicroscope to evaluate the presence or absence of external resin cracks.
［発明の効果コ
以上の説明および第１表から明らかなように、本発明の
封止用樹脂組成物および半導体封止装置は、耐湿性、半
田耐熱性に優れ、吸湿による影響が少なく、電極の腐食
による断線や水分によるリーク電流の発生などを著しく
低減することができ、しかも長期間にわたって信頼性を
保証することができる。[Effects of the Invention] As is clear from the above description and Table 1, the encapsulating resin composition and semiconductor encapsulating device of the present invention have excellent moisture resistance and soldering heat resistance, are less affected by moisture absorption, and have excellent electrode resistance. It is possible to significantly reduce the occurrence of wire breakage due to corrosion and leakage current due to moisture, and furthermore, it is possible to guarantee reliability over a long period of time.
Claims (1)
、化学式、表等があります▼ （但し、式中ｍは０又は１以上の整数を、 ｎは１以上の整数をそれぞれ表す） （Ｂ）次の一般式（ I ）又は（II）で示さ れる多官能フェノール樹脂、および ▲数式、化学式、表等があります▼・・・（ I ） ▲数式、化学式、表等があります▼・・・（II） （但し、式中ＲはＣ＿ｍＨ＿２＿ｍ＿＋＿１を、ｍ、ｎ
は０又は１以上の整数を表す） （Ｃ）シリカ粉末 を必須成分とし、樹脂組成物に対して前記 （Ｃ）のシリカ粉末を５０〜９０重量％含有してなるこ
とを特徴とする封止用樹脂組成物。 ２ （Ａ）次の一般式で示されるエポキシ樹脂、▲数式
、化学式、表等があります▼ （但し、式中ｍは０又は１以上の整数を、 ｎは１以上の整数をそれぞれ表す） （Ｂ）次の一般式（ I ）又は（II）で示さ れる多官能フェノール樹脂、および ▲数式、化学式、表等があります▼・・・（ I ） ▲数式、化学式、表等があります▼・・・（II） （但し、式中ＲはＣ＿ｍＨ＿２＿ｍ＿＋＿１を、ｍ、ｎ
は０又は１以上の整数を表す） （Ｃ）シリカ粉末 を必須成分とし、樹脂組成物に対して前記 （Ｃ）のシリカ粉末を５０〜９０重量％含有する封止用
樹脂組成物によって、半導体素子を封止してなることを
特徴とする半導体封止装置。[Scope of Claims] 1 (A) Epoxy resin represented by the following general formula, ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (However, in the formula, m is 0 or an integer of 1 or more, and n is 1 or more. (B) Polyfunctional phenolic resin represented by the following general formula (I) or (II), and ▲Mathematical formulas, chemical formulas, tables, etc.▼...(I) ▲Mathematical formulas, chemical formulas, tables, etc. etc.▼...(II) (However, in the formula, R is C_mH_2_m_+_1, m, n
(represents an integer of 0 or 1 or more) (C) A sealing comprising silica powder as an essential component and containing 50 to 90% by weight of the silica powder of (C) based on the resin composition. Resin composition for use. 2 (A) Epoxy resin represented by the following general formula, ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (However, in the formula, m represents an integer of 0 or 1 or more, and n represents an integer of 1 or more.) B) Multifunctional phenolic resin represented by the following general formula (I) or (II), and ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...・(II) (However, in the formula, R represents C_mH_2_m_+_1, m, n
(represents an integer of 0 or 1 or more) (C) Semiconductor A semiconductor sealing device characterized by sealing an element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9755490A JPH03296523A (en) | 1990-04-16 | 1990-04-16 | Resin composition for sealing and semiconductor device sealed therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9755490A JPH03296523A (en) | 1990-04-16 | 1990-04-16 | Resin composition for sealing and semiconductor device sealed therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03296523A true JPH03296523A (en) | 1991-12-27 |
Family
ID=14195462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9755490A Pending JPH03296523A (en) | 1990-04-16 | 1990-04-16 | Resin composition for sealing and semiconductor device sealed therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03296523A (en) |
-
1990
- 1990-04-16 JP JP9755490A patent/JPH03296523A/en active Pending
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