JPH03210323A - Sealing resin composition and semiconductor device - Google Patents
Sealing resin composition and semiconductor deviceInfo
- Publication number
- JPH03210323A JPH03210323A JP433690A JP433690A JPH03210323A JP H03210323 A JPH03210323 A JP H03210323A JP 433690 A JP433690 A JP 433690A JP 433690 A JP433690 A JP 433690A JP H03210323 A JPH03210323 A JP H03210323A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- resin
- silica powder
- semiconductor device
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000011342 resin composition Substances 0.000 title claims abstract description 23
- 238000007789 sealing Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000843 powder Substances 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 239000003822 epoxy resin Substances 0.000 claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 18
- 229920003986 novolac Polymers 0.000 claims abstract description 14
- 239000005011 phenolic resin Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims 2
- 238000005476 soldering Methods 0.000 abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 229920001568 phenolic resin Polymers 0.000 abstract description 4
- 239000012778 molding material Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000010680 novolac-type phenolic resin Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000001993 wax Substances 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- -1 carbon black Chemical compound 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000006082 mold release agent Chemical class 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000005480 straight-chain fatty acid group Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的１
（産業上の利用分野）
本発明は、耐湿性、半田耐熱性に優れた封止用樹脂組成
物および半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention 1 (Field of Industrial Application) The present invention relates to a sealing resin composition and a semiconductor device having excellent moisture resistance and soldering heat resistance.
（従来の技術）
近年、半導体集積回路の分野において、高集積化、高信
頼性化の技術開発と同時に半導体装置の実装工程の自動
化が推進されている。 例えばフ／
ラットパッケージ型の半導体装置を回路基板に取り付け
る場合に、従来リードビン毎に半田付けを行っていたが
、最近では半田浸漬方式や半田リフロ一方式が採用され
ている。(Prior Art) In recent years, in the field of semiconductor integrated circuits, the automation of the mounting process of semiconductor devices has been promoted at the same time as the development of technologies for higher integration and higher reliability. For example, when attaching a flat/flat package type semiconductor device to a circuit board, soldering was conventionally performed for each lead bin, but recently solder immersion methods and solder reflow one-way methods have been adopted.
（発明が解決しようとする課題）
従来のノボラック型などのエポキシ樹脂、ノボラック型
フェノール樹脂およびシリカ粉末からなる樹脂組成物で
封止した半導体装置は、装置全体の半田浴浸漬を行うと
耐湿性が低下するという欠点があった。 特に吸湿した
半導体装置を浸漬すると、封止樹脂と半導体チップおよ
び封止樹脂とリードフレームとの間の剥がれや、内部樹
脂クラックが生じて著しい耐湿性劣化を起こし、電極の
腐食による断線や水分によるリーク電流を生じ、その結
果、半導体装置は、長期間の信頼性を保証することがで
きないという欠点があった。(Problems to be Solved by the Invention) A semiconductor device sealed with a conventional resin composition consisting of a novolac type epoxy resin, a novolac type phenol resin, and silica powder loses moisture resistance when the entire device is immersed in a solder bath. The disadvantage was that it decreased. In particular, if a semiconductor device that has absorbed moisture is immersed, peeling between the encapsulating resin and the semiconductor chip, between the encapsulating resin and the lead frame, and internal resin cracks will occur, resulting in a significant deterioration of moisture resistance. A leakage current is generated, and as a result, the semiconductor device has the disadvantage that long-term reliability cannot be guaranteed.
本発明は、上記の欠点を解消するためになされたもので
、吸湿の影響が少なく、特に半田浸漬後の耐湿性、半田
耐熱性に優れ、封止樹脂と半導体チップあるいは封止樹
脂とリードフレームとの剥がれや内部樹脂クラックの発
生がなく、また電極の腐食による断線や水分によるリー
ク電流の発生もなく、長期信頼性を保証できる封止用樹
脂組成物および半導体装置を提供しようとするものであ
る。The present invention has been made in order to eliminate the above-mentioned drawbacks, and has little influence of moisture absorption, particularly excellent moisture resistance after soldering immersion, and soldering heat resistance, and is capable of connecting a sealing resin to a semiconductor chip or a sealing resin to a lead frame. The objective is to provide an encapsulating resin composition and a semiconductor device that can guarantee long-term reliability without peeling off or internal resin cracks, and without disconnection due to electrode corrosion or leakage current due to moisture. be.
［発明の構成］
（課頭を解決するための手段）
本発明者らは、上記の目的を達成しようと鋭意研究を重
ねた結果、次の式で示すエポキシ樹脂およびノボラック
型フェノール樹脂を用いることによって、耐湿性、半田
耐熱性に優れた半導体装置の封止用樹脂組成物が得られ
ることを見いだし、本発明を完成したものである。[Structure of the Invention] (Means for Solving Problems) As a result of intensive research aimed at achieving the above object, the present inventors have discovered that an epoxy resin and a novolac type phenolic resin represented by the following formulas are used. It was discovered that a resin composition for sealing a semiconductor device having excellent moisture resistance and soldering heat resistance can be obtained by the method, and the present invention was completed.
すなわち、本発明の封止用樹脂組成物は、＜Ａ）次の式
で示されるエポキシ樹脂
（Ｂ）ノボラック型フェノール樹脂および（Ｃ）シリカ
粉末
を必須成分とし、樹脂組成物に対して前記（Ｃ）のシリ
カ粉末を５０〜９０重量％含有してなることを特徴とす
る。That is, the sealing resin composition of the present invention contains <A) an epoxy resin represented by the following formula, (B) a novolac type phenol resin, and (C) silica powder as essential components, and the resin composition has the above ( It is characterized by containing 50 to 90% by weight of the silica powder of C).
また、本発明の半導体装置は、
（Ａ）次の式で示されるエポキシ樹脂
（Ｂ）ノボラック型フェノール樹脂および（Ｃ）シリカ
粉末
を必須成分とし、樹脂組成物に対して前記（Ｃ）のシリ
カ粉末を５０〜９０重量％含有しこの封止用樹脂組成物
を用いて半導体素子を封止してなることを特徴とする。Further, the semiconductor device of the present invention includes (A) an epoxy resin represented by the following formula, (B) a novolac type phenol resin, and (C) silica powder as essential components, and the silica powder of (C) in the resin composition. It is characterized by containing 50 to 90% by weight of powder and sealing a semiconductor element using this sealing resin composition.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に用いる（Ａ）次の式で示されるエポキシ樹脂は
、
分子量など特に制限されることはなく、広く使用するこ
とができる。 また、このエポキシ樹脂にノボラック系
エポキシ樹脂やエビビス系エポキシ樹脂を併用すること
ができる。The epoxy resin (A) represented by the following formula used in the present invention is not particularly limited in terms of molecular weight, and can be widely used. Further, a novolac epoxy resin or an Ebisu epoxy resin can be used in combination with this epoxy resin.
本発明に用いるＣＢ）ノボラック型フェノール樹脂とし
ては、フェノール、アルキルフェノール等のフェノール
類と、ホルムアルデヒドあるいはバラホルムアルデヒド
とを反応させて得られるノボラック型フェノール樹脂お
よびこれらの変性樹脂、例えばエポキシ化もしくはブチ
ル化したノボラック型フェノール樹脂等が挙げられ、ノ
ボラック型フェノール樹脂である切り特に制限はなく広
く使用することができる。 そしてこれらのノボラッ
ク型フェノール樹脂は、単独又は２種以上混合して使用
することができる。CB) The novolak type phenolic resin used in the present invention includes novolak type phenol resins obtained by reacting phenols such as phenol and alkylphenols with formaldehyde or paraformaldehyde, and modified resins thereof, such as epoxidized or butylated resins. Novolac type phenolic resins are mentioned, and novolac type phenolic resins can be widely used without any particular restrictions. These novolac type phenolic resins can be used alone or in combination of two or more.
本発明に用いる（Ｃ）シリカ粉末としては、般に使用さ
れているものが広く使用されるが、それらの中でも不純
物濃度が低く、平均粒径３０μｍ以下のものが好ましい
、 平均粒径が３０μｍを超えると耐湿性および成形性
が劣り好ましくない。As the silica powder (C) used in the present invention, commonly used silica powders are widely used, but among them, those with a low impurity concentration and an average particle size of 30 μm or less are preferable. If it exceeds this, moisture resistance and moldability will deteriorate, which is undesirable.
シリカ粉末の配合割合は、全体の樹脂組成物に対して５
０〜９０重量％含有することが好ましい。 その割合が
５０重量％未満では樹脂組成物の吸湿性が高く、半田浸
漬後の耐湿性に劣り、また９０重量％を超えると極端に
流動性が悪くなり成形性に劣り好ましくない。The blending ratio of silica powder is 5% to the total resin composition.
The content is preferably 0 to 90% by weight. If the proportion is less than 50% by weight, the resin composition will have high hygroscopicity and will have poor moisture resistance after immersion in solder, and if it exceeds 90% by weight, fluidity will be extremely poor and moldability will be poor, which is not preferable.
本発明の封止用樹脂組成物は、前述した特定のエポキシ
樹脂、多官能フェノール樹脂、およびシリカ粉末を必須
成分とするが、本発明の目的に反しない限度において、
また必要に応じて、例えば天然ワックス類、合成ワック
ス順、直鎖脂肪酸の金属塩、酸アミド、エステル類、パ
ラフィンなどの離型剤、三酸化アンチモンなどの難燃剤
、カーボンブラックなどの着色剤、シランカップリング
剤、種々の硬化促進剤、ゴム系やシリコーン系の低応力
付与剤等を適宜添加・配合することができる。The sealing resin composition of the present invention contains the above-mentioned specific epoxy resin, polyfunctional phenol resin, and silica powder as essential components, but within the range not contrary to the purpose of the present invention,
In addition, if necessary, for example, natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, mold release agents such as paraffin, flame retardants such as antimony trioxide, colorants such as carbon black, etc. A silane coupling agent, various curing accelerators, rubber-based or silicone-based low stress imparting agents, etc. can be added and blended as appropriate.
本発明の封止用樹脂組成物を成形材料として調製する場
合の一般的方法は、前述のエポキシ樹脂、ノボラック型
フェノール樹脂、シリカ粉末その他を配合し、ミキサー
等によって十分均一に混合した後、更に熱ロールによる
溶融混合処理又はニーダ等による混合処理を行い、次い
で冷却固化させ適当な大きさに粉砕して成形材料とする
ことができる。 この成形材料を用いて半導体素子をセ
ットした金型内にトランスファー注入して硬化させて本
発明の半導体装置を製造することができる。The general method for preparing the sealing resin composition of the present invention as a molding material is to blend the above-mentioned epoxy resin, novolak type phenol resin, silica powder, etc., mix sufficiently uniformly with a mixer, etc., and then further A molding material can be obtained by melting and mixing using hot rolls or mixing using a kneader, etc., and then cooling and solidifying the mixture and pulverizing it into an appropriate size. The semiconductor device of the present invention can be manufactured by transfer-injecting this molding material into a mold in which a semiconductor element is set and curing it.
成形材料は半導体素子の封止の他に電子部品、或いは電
気部品の封止また被覆・絶縁等にも使用することができ
、それらに優れた特性を付与することができる。In addition to encapsulating semiconductor elements, the molding material can also be used for encapsulating and insulating electronic or electrical components, and can impart excellent properties to them.
（作用）
本発明の封止用樹脂組成物は、特定のエポキシ樹脂とノ
ボラック型フェノール樹脂を用いることによって、樹脂
組成物のガラス転移温度が上昇し、熱機械的特性と低応
力性が向上し、半田浸漬、半田リフロー後の樹脂クラッ
クの発生がなくなり耐湿性劣化が少なくなるものである
。(Function) By using a specific epoxy resin and a novolac type phenolic resin, the resin composition for sealing of the present invention increases the glass transition temperature of the resin composition and improves thermomechanical properties and low stress properties. , the occurrence of resin cracks after solder immersion and solder reflow is eliminated, and moisture resistance deterioration is reduced.
（実施例）
次に本発明の実施例について説明するが、本発明は以下
の実施例に限定されるものではない。(Examples) Next, examples of the present invention will be described, but the present invention is not limited to the following examples.
以下の実施例および比較例において１％」とは「重量％
」を意味する。In the following Examples and Comparative Examples, "1%" means "wt%
” means.
実施例 １
前述した特定のエポキシ樹脂１７％、ノボラック型フェ
ノール樹脂８％、シリカ粉末７４％、硬化促進剤０．３
％、エステルワックス０．３％およびシランカップリン
グ剤０．４％を常温で混合し、さらに９０〜９５°Ｃで
混練し、冷却した後粉砕して成形材料（Ａ）を製造した
。Example 1 17% of the specific epoxy resin mentioned above, 8% of novolak type phenolic resin, 74% of silica powder, 0.3 curing accelerator
%, ester wax 0.3%, and silane coupling agent 0.4% were mixed at room temperature, further kneaded at 90 to 95°C, cooled, and then crushed to produce a molding material (A).
実施例 ２
実施例１で用いたエポキシ樹脂９％およびノボラック型
フェノール樹脂８％、並びにオルソクレゾールノボラッ
ク型エポキシ樹脂８％、シリカ粉末７４％、硬化促進剤
０．３％、エステルワックス０．３％およびシランカッ
プリング剤０．４％を常温で混合し、さらに９０〜９５
℃で混練冷却した後、粉砕して成形材料（Ｂ）を製造し
な。Example 2 9% epoxy resin and 8% novolac type phenolic resin used in Example 1, 8% orthocresol novolac type epoxy resin, 74% silica powder, 0.3% curing accelerator, 0.3% ester wax and 0.4% of a silane coupling agent are mixed at room temperature, and further 90 to 95%
After kneading and cooling at °C, the mixture is pulverized to produce the molding material (B).
比較例 １
オルソクレゾールノボラック型エポキシ！４ ｔｆｆｌ
ｆ １７％、ノボラック型フェノール樹脂８％、シリカ
粉末７４％、硬化促進剤０．３％、エステル系ワックス
０．３％およびシランカヅリング剤０．４％を混合し、
実施ｇＩ４１と同様にして成形材料（Ｃ）を製造しな。Comparative Example 1 Orthocresol novolac type epoxy! 4 tffl
f 17%, novolac type phenolic resin 8%, silica powder 74%, curing accelerator 0.3%, ester wax 0.3% and silane curdling agent 0.4%,
Prepare the molding material (C) in the same manner as in Example gI41.
比較例 ２
エビビス型エポキシ樹脂（エポキシ当量４５０）２０％
、ノボラック型フェノール樹脂５％、シリカ粉末７４％
、硬化促進剤０．３％、エステル系ワックス０．３％お
よびシランカップリング剤０．４％を混合し、実施例１
と同様にして成形林料（Ｄ）を製造した。Comparative example 2 Ebibis type epoxy resin (epoxy equivalent: 450) 20%
, novolac type phenolic resin 5%, silica powder 74%
, 0.3% curing accelerator, 0.3% ester wax and 0.4% silane coupling agent were mixed, and Example 1
Molded forest material (D) was produced in the same manner as above.
こうして製造した成形材料＜Ａ）〜（Ｄ）を用いて １
７０℃に加熱した金型内にトランスファー注入し、硬化
させて半導体素子を封止した半導体装！を製造した。
これらの半導体装置の緒特性を試験したので、その結果
を第１表に示したが、本発明の封止用樹脂組成物および
半導体装置は耐湿性、半田耐熱性に優れており、本発明
の顕著な効果を確認することができな。Using the molding materials <A) to (D) thus produced, 1
A semiconductor device in which a semiconductor element is sealed by transfer injection into a mold heated to 70°C and cured! was manufactured.
The properties of these semiconductor devices were tested and the results are shown in Table 1. The encapsulating resin composition and semiconductor device of the present invention have excellent moisture resistance and soldering heat resistance, and the results are shown in Table 1. No significant effect could be confirmed.
第１表
＊１ ニドランスファー成形によって直径５０１肯、厚
さ３１の成形品を作り、これを１２７℃。Table 1 *1 A molded product with a diameter of 501mm and a thickness of 31mm was made by Nidor transfer molding and heated to 127℃.
２．５気圧の飽和水蒸気中に２４時間放置し、増加した
重量によって測定した。The sample was left in saturated steam at 2.5 atmospheres for 24 hours, and the weight increase was measured.
＊２：吸水率の場合と同様な成形品を作り、１７５℃で
８時間の後硬化を行い、適当な大きさの試験片とし、熱
機械分析装置を用いて測定した。*2: A molded article similar to that for water absorption was made and post-cured at 175°C for 8 hours to obtain a test piece of an appropriate size, and measured using a thermomechanical analyzer.
傘３ ：ＪＩＳ−に−６９１１に準じて試験しな。Umbrella 3: Tested according to JIS-6911.
＊４： ２本以上のアルミニウム配線を有するシリコン
製チップを、通常の４２７０イフレームに接着し、成形
材料を用いて １７５℃で２分間トランスファー成形し
た後、１７５℃、８時間後硬化を行った。 こうして得
な成形品を予め、４０℃、 ９０％ＲＨ，１００時間の
吸湿処理した後、２５０℃の半田浴に１０秒間浸漬しな
、 その後、１２７℃、２．５気圧の飽和水蒸気中でプ
レッシャークツカーテストを行い、アルミニウムの腐食
による断線を不良として評価しな。*4: A silicon chip with two or more aluminum wirings was glued to a regular 4270 frame, transfer molded using molding material at 175°C for 2 minutes, and then post-cured at 175°C for 8 hours. . The thus obtained molded product was previously subjected to moisture absorption treatment at 40°C, 90% RH for 100 hours, and then immersed in a solder bath at 250°C for 10 seconds.Then, it was heated in saturated steam at 127°C and 2.5 atm. Perform the Kutsuker test and evaluate disconnection due to aluminum corrosion as a defect.
ネ５ ： ８ｘ８ｒｇｗダミーチップをＱ−ＦＰ
（１４１４ｘ １．４）パッケージに納め成形材料を用
いて１７５℃で２分間トランスファー成形した後、１７
５℃、８時間後硬化を行った。 こうして製造した半導
体装置を８５℃、８５％。Ne5: Q-FP 8x8rgw dummy chip
(1414x 1.4) After transfer molding at 175℃ for 2 minutes using molding material, 17
Post-curing was performed at 5°C for 8 hours. The semiconductor device manufactured in this way was heated to 85°C and 85%.
２４時間の吸湿処理をした後２４０℃の半田浴に１分間
浸漬した。 その後、実体顕微鏡でバラゲージ表面を′
ａ察し、外部樹脂クラックの発生の有無を評価した。After 24 hours of moisture absorption treatment, it was immersed in a 240°C solder bath for 1 minute. Afterwards, examine the surface of the baggage with a stereomicroscope.
The presence or absence of external resin cracks was evaluated.
［発明の効果］
以上の説明および第１表から明らかなように、本発明封
止用樹脂組成物および半導体装置は、耐湿性、半田耐熱
性に優れ、吸湿による影響が少なく、電極の腐食による
断線や水分によるリーク電流の発生などを著しく低減す
ることができ、しかも長期間にわたって信頼性を保証す
ることができる。[Effects of the Invention] As is clear from the above explanation and Table 1, the encapsulating resin composition and semiconductor device of the present invention have excellent moisture resistance and soldering heat resistance, are less affected by moisture absorption, and are less susceptible to electrode corrosion. It is possible to significantly reduce the occurrence of leakage current due to disconnection and moisture, and furthermore, it is possible to guarantee reliability over a long period of time.
Claims (1)
とを特徴とする封止用樹脂組成物。 ２（Ａ）次の式で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼ （Ｂ）ノボラック型フェノール樹脂および （Ｃ）シリカ粉末 を必須成分とし、樹脂組成物に対して前記 （Ｃ）のシリカ粉末を５０〜９０重量％含有する封止用
樹脂組成物によって、半導体素子を封止してなることを
特徴とする半導体装置。[Claims] 1 (A) An epoxy resin represented by the following formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (B) A novolac type phenol resin and (C) silica powder as essential components, and On the other hand, a sealing resin composition containing 50 to 90% by weight of the silica powder (C). 2 (A) Epoxy resin represented by the following formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (B) Novolac type phenol resin and (C) silica powder are essential components, and the above (C) is added to the resin composition. 1. A semiconductor device comprising a semiconductor element sealed with a sealing resin composition containing 50 to 90% by weight of silica powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP433690A JPH03210323A (en) | 1990-01-11 | 1990-01-11 | Sealing resin composition and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP433690A JPH03210323A (en) | 1990-01-11 | 1990-01-11 | Sealing resin composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03210323A true JPH03210323A (en) | 1991-09-13 |
Family
ID=11581602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP433690A Pending JPH03210323A (en) | 1990-01-11 | 1990-01-11 | Sealing resin composition and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03210323A (en) |
-
1990
- 1990-01-11 JP JP433690A patent/JPH03210323A/en active Pending
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