JPH0483231A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0483231A JPH0483231A JP2200250A JP20025090A JPH0483231A JP H0483231 A JPH0483231 A JP H0483231A JP 2200250 A JP2200250 A JP 2200250A JP 20025090 A JP20025090 A JP 20025090A JP H0483231 A JPH0483231 A JP H0483231A
- Authority
- JP
- Japan
- Prior art keywords
- pixel electrode
- electrode
- lower electrode
- slit
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000003860 storage Methods 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 16
- 230000007547 defect Effects 0.000 abstract description 13
- 239000011229 interlayer Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 abstract description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、蓄積容量を具備ししかも平面的にアレイ状に
多数配置される順スタが一部及び逆スタが一型薄膜トラ
ンジスタに間し、特に蓄積容量部の眉間短絡不良を低減
させて高画品質を具備する液晶パネル等を高製造歩留ま
りで提供することのできる半導体装置に間する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Fields] The present invention provides a single-type thin film transistor in which a number of forward stars and reverse stars, each having a storage capacitance and arranged in an array on a plane, are interposed in a one-type thin film transistor. In particular, the present invention is intended for semiconductor devices that can reduce glabellar short-circuit defects in the storage capacitor section and provide liquid crystal panels and the like with high image quality at a high manufacturing yield.
［従来の技術］
従来、この種の半導体装置は、例えば逆スタが一型薄膜
トランジスタを備えたものとして第３図に模式的平面図
及び第４図に模式的断面図を示すように、ガラス基板１
上にＩＴＯやクロム等の膜を所望の形状に付着形成させ
てゲート電極２を形成すると共に蓄積容量のための下部
電極８をも形成する。次に、ゲート絶縁膜及び蓄積容量
のための絶縁膜として二酸化シリコンや窒化シリコン等
の眉間絶縁膜３を所望の厚みに付着形成させ、しかる後
に能動素子として機能する非晶質シリコン４あるいは多
結晶シリコン、さらには次工程で形成されるドレイン５
やソース６等の電極とオーミックコンタクトを得るため
の高濃度のリンやボロン等を含むシリコン薄膜（図示省
略）を所望の形状に付着させて薄膜トランジスタ祁を形
成する。[Prior Art] Conventionally, this type of semiconductor device has a glass substrate, as shown in a schematic plan view in FIG. 3 and a schematic cross-sectional view in FIG. 1
A film of ITO, chromium, etc. is deposited thereon in a desired shape to form the gate electrode 2 and also the lower electrode 8 for storage capacitance. Next, a glabellar insulating film 3 of silicon dioxide, silicon nitride, etc. is deposited to a desired thickness as an insulating film for a gate insulating film and a storage capacitor, and then amorphous silicon 4 or polycrystalline silicon 4 that functions as an active element is formed. Silicon, and also the drain 5 formed in the next step
A thin film transistor is formed by depositing a silicon thin film (not shown) containing a high concentration of phosphorus, boron, etc. in a desired shape to obtain ohmic contact with electrodes such as the source 6 and the source 6.
薄膜トランジスタ部のドレイン電極５やソース電極６の
ための金属材料は一般に良導電体で不透明なりロムスパ
ッタ膜で構成され、液晶を表示するためのピクセル電極
７は、例えばソース電極６に電気的に接続されたスパッ
タＩＴＯ膜、酸化スズ等の透明電極で構成される。この
ピクセル電極７の一部領域は絶縁膜３を介して下部電極
８を対向しており、ピクセル電極７と蓄積容量下部電極
８との積Ｎ額域に挟まれた層間絶縁膜３の領域が蓄積容
量として機能し、薄膜トランジスタの動作によってドレ
イン電極５からソース電極６へ移送された電荷を長時間
ソース電極（ピクセル電極）に保存する機能を担う。The metal material for the drain electrode 5 and source electrode 6 of the thin film transistor section is generally a good conductor, opaque, and composed of a ROM sputtered film, and the pixel electrode 7 for displaying liquid crystal is electrically connected to the source electrode 6, for example. It consists of a sputtered ITO film, a transparent electrode made of tin oxide, etc. A part of the pixel electrode 7 faces the lower electrode 8 via the insulating film 3, and a region of the interlayer insulating film 3 sandwiched between the product N area of the pixel electrode 7 and the storage capacitor lower electrode 8 is It functions as a storage capacitor and has the function of storing charges transferred from the drain electrode 5 to the source electrode 6 by the operation of the thin film transistor in the source electrode (pixel electrode) for a long time.
［発明が解決しようとする課題］
上述した従来の半導体装置は、例えば蓄積容量形成領域
の眉間絶縁膜３に欠陥があった場合には容易に下部電極
８とピクセル電極７とが電気的に短絡し、ドレイン電極
からソース電極（ピクセル電極）へ書き込まれた電荷が
この結果として容易にピクセル電極部７から失われるも
のであった。[Problems to be Solved by the Invention] In the conventional semiconductor device described above, for example, if there is a defect in the glabellar insulating film 3 in the storage capacitor formation region, the lower electrode 8 and the pixel electrode 7 can easily be electrically shorted. However, as a result, charges written from the drain electrode to the source electrode (pixel electrode) are easily lost from the pixel electrode section 7.
従って、これらの欠陥を具備する半導体装置を用いて液
晶パネルを駆動させた際に、例えば「黒」の画面をパネ
ル全体に表示させた場合には、上記の欠陥蓄積容量部を
具備する薄膜トランジスタ相当部は「白」の画面を表示
することになり、液晶パネルの画像品質は著しく低下す
るものであった。Therefore, when driving a liquid crystal panel using a semiconductor device with these defects, for example, if a "black" screen is displayed on the entire panel, a semiconductor device with the above-mentioned defect storage capacitance section equivalent to a thin film transistor will be displayed. The LCD panel displayed a "white" screen, and the image quality of the liquid crystal panel was significantly degraded.
これらの画像品質低下は、人間の視覚に直接的に訴える
液晶パネルの場合にはぜひとも避けなければならない課
題であった。This deterioration in image quality is a problem that must be avoided at all costs in the case of liquid crystal panels that directly appeal to human vision.
しかも、前記絶縁膜３は一般に下部電極８やピクセル電
極７と共に透明な材料となっており、たとえ特定の薄膜
トランジスタの蓄積容量部に欠陥が存在することが電気
的に確認されたとしても、材質の透明性故に下層の下部
電極８の欠陥部確認や絶縁膜３の欠損部の固定が困難と
なるものであった。Moreover, the insulating film 3 is generally made of a transparent material along with the lower electrode 8 and the pixel electrode 7, so even if it is electrically confirmed that there is a defect in the storage capacitor part of a particular thin film transistor, the material Due to its transparency, it is difficult to confirm the defective portion of the lower electrode 8 in the lower layer and to fix the defective portion of the insulating film 3.
［課題を解決するための手段］
本発明の半導体装置は、薄膜トランジスタを介してデー
タ信号線に接続されるピクセル電極と、ピクセル電極の
一部領域と絶縁膜を介して対向する蓄積容量用の下部電
極とを有する半導体装置において、前記ピクセル電極の
下部電極と重なる領域の境界部にスリットを設けたこと
を特徴とする。[Means for Solving the Problems] A semiconductor device of the present invention includes a pixel electrode connected to a data signal line via a thin film transistor, and a lower portion for a storage capacitor that faces a partial region of the pixel electrode with an insulating film interposed therebetween. In the semiconductor device having an electrode, a slit is provided at a boundary of a region of the pixel electrode overlapping with a lower electrode.
すなわち、前記蓄積容量用下部電極近傍上のピクセル電
極部にスリットを設けることを特徴とするものであり、
蓄積容量を提供する下部電極とピクセル電極とが絶縁膜
等の欠陥によって電気的に短絡した場合には、このスリ
ット部によって狭くなったピクセル電極を切断して短絡
不良の影響を低減させるものである。すなわち、透明な
下部電極上に積層された透明な絶縁膜と透明なピクセル
電極部とからなる蓄積容量部近傍においては、最も上層
に配置されたピクセル電極が最も視認性が高くなる。従
って、ピクセル電極のスリット部を下層の視認性の低い
下部電極に対応した位置近傍に配置することによって、
容易に下部電極の存在位置を推定することが可能になる
。それ故、ピクセル電極に設けられたスリット部を切断
することによって、下部電極を損傷させることなくピク
セル電極と下部電極とを電気的に分離することができる
。これは取りも直さず前記の下部電極とピクセル電極と
の電気的短絡を修復したことに外ならない。このように
修復した薄膜トランジスタは蓄積容量を失ったために、
ピクセル電極上の電荷保持時間が正常晶の半分程度に短
くなるものの、液晶パネルの全黒表示面においては灰黒
色の表示を示すために、欠陥による画像品質の低下は最
小に抑えられる。That is, it is characterized in that a slit is provided in the pixel electrode portion near the storage capacitor lower electrode,
If the lower electrode, which provides storage capacity, and the pixel electrode are electrically short-circuited due to a defect in the insulating film, etc., this slit section cuts the narrowed pixel electrode to reduce the effects of the short-circuit failure. . That is, in the vicinity of the storage capacitor section which is composed of a transparent insulating film laminated on a transparent lower electrode and a transparent pixel electrode section, the pixel electrode disposed in the uppermost layer has the highest visibility. Therefore, by arranging the slit portion of the pixel electrode near the position corresponding to the lower layer lower electrode with low visibility,
It becomes possible to easily estimate the location of the lower electrode. Therefore, by cutting the slit provided in the pixel electrode, the pixel electrode and the lower electrode can be electrically separated from each other without damaging the lower electrode. This is nothing but repairing the electrical short circuit between the lower electrode and the pixel electrode. Since the thin film transistor repaired in this way has lost its storage capacity,
Although the charge retention time on the pixel electrode is shortened to about half that of normal crystal, since the all-black display surface of the liquid crystal panel shows a gray-black display, the deterioration in image quality due to defects is suppressed to a minimum.
［実施例コ 次に本発明について図面を参照して説明する。[Example code] Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の平面図である。蓄積容量の
ための下部電極８及び下部電極パスライン８′として厚
み］ ０ＯＯＡのＩＴＯ膜をガラス基板上に所望の形状
に付着形成させ、次にゲート電極２及びゲート電極パス
ライン２′として厚み２０００へのクロムを所望の形状
に付着形成させる。しかる後にゲート絶縁膜及び層間絶
縁膜として厚み２００ＯＡの二酸化シリコンと厚み５０
００Ａの窒化シリコンを積層させて所望の形状に付着形
成させる（図示省略）。能動素子領域には厚み５００Ｏ
Ａの非晶質シリコン薄膜４、並びに次工程で形成される
トレイン電極とソース電極とのコンタクト用としてのリ
ンを含有する厚み１０００へのシリコン薄ｇ（図示省略
）を付着させ所望の形状に形成する。次にドレイン電極
５及びデータ信号線としてのトレイン電極パスライン５
′さらにはソース電極６として厚み２０００へのクロム
薄膜を所望の形状に付着形成させ、更にスリット９を具
備する厚み１０００へのＩＴＯ膜をソース電極と一部積
層させて所望の形状に付着形成されてピクセル電極７を
構成する。このスリット９はピクセル電極７の下部電極
８と重なる領域の境界部に設けられている。FIG. 1 is a plan view of one embodiment of the present invention. Thickness of lower electrode 8 and lower electrode pass line 8' for storage capacitance] An ITO film of 0OOA is deposited in a desired shape on a glass substrate, and then a thickness of 2000 mm is formed as gate electrode 2 and gate electrode pass line 2'. Chromium is deposited and formed into the desired shape. After that, silicon dioxide with a thickness of 200 OA and a silicon dioxide with a thickness of 50 OA are used as a gate insulating film and an interlayer insulating film.
00A silicon nitride is laminated and deposited in a desired shape (not shown). The active element area has a thickness of 5000
A thin g of silicon (not shown) is deposited on the amorphous silicon thin film 4 of A and a thickness of 1000 mm containing phosphorus for contact between the train electrode and source electrode to be formed in the next step and formed into a desired shape. do. Next, a drain electrode 5 and a train electrode pass line 5 as a data signal line.
'Furthermore, a thin chromium film with a thickness of 2000 mm is deposited in a desired shape as the source electrode 6, and an ITO film with a thickness of 1000 mm with slits 9 is partially laminated with the source electrode to form a desired shape. The pixel electrode 7 is constituted by the pixel electrode 7. This slit 9 is provided at the boundary of the region of the pixel electrode 7 overlapping with the lower electrode 8 .
さて第１図において、蓄積容量部の下部電極８とピクセ
ル電極７とが層間短絡している場合には、前記スリット
部９においてピクセル電極７を図中矢印で示す方向にレ
ーザ光によって切断する。この操作によってピクセル電
極７と下部電極８との眉間短絡不良は修復される。Now, in FIG. 1, if there is an interlayer short circuit between the lower electrode 8 of the storage capacitor section and the pixel electrode 7, the pixel electrode 7 is cut at the slit section 9 in the direction indicated by the arrow in the figure by a laser beam. By this operation, the glabellar short circuit between the pixel electrode 7 and the lower electrode 8 is repaired.
第２図は本発明の他の実施例を示す平面図である。本発
明においてはピクセル電極７に設けたスリット部９を２
箇所としたものであり、第】の実施例に較べてピクセル
電極７の切断位置を更に明確にしたものである。FIG. 2 is a plan view showing another embodiment of the invention. In the present invention, the slit portion 9 provided in the pixel electrode 7 is
The cutting position of the pixel electrode 7 is made clearer than in the second embodiment.
尚、本発明が上記した効果を呈するものであれば、本発
明の半導体装置は発明の範囲を逸脱しない範囲で形状や
寸法、材料等の制限を受けるものではない。また本発明
においては逆スタが一型薄膜トランジスタを例にとって
説明したが、本発明は当然のことながら順スタが一型薄
膜トランジスタに対しても適用することができる。さら
にはまた、本発明のスリット部のピクセル電極切断を液
晶が充填されたパネル内において実施した場合には、切
断によるピクセル電極材料の液晶中への混合量が少なく
てすみ、液晶の物理的特性の劣化が最小となる効果も現
れる。It should be noted that, as long as the present invention exhibits the above-described effects, the semiconductor device of the present invention is not subject to any limitations in shape, size, material, etc., without departing from the scope of the invention. Furthermore, although the present invention has been explained using a single type reverse star type thin film transistor as an example, the present invention can of course be applied to a single type forward type thin film transistor. Furthermore, when the pixel electrode cutting at the slit portion of the present invention is carried out in a panel filled with liquid crystal, the amount of pixel electrode material mixed into the liquid crystal due to cutting can be reduced, and the physical characteristics of the liquid crystal There is also an effect that the deterioration of is minimized.
［発明の効果］
以上説明したように本発明は、透明な蓄積容量用下部電
極の存在する近傍上の透明なピクセル電極部にスリット
を設けたので、上層に配置されしかもスリットを備えた
ピクセル電極部の視認性は下部電極の視認性よりも高く
なっている。従ってそのスリット部の位置から容易に下
部電極の存在位置を推定することができる。その故、本
発明の半導体装置は視認性の困難な蓄積−容量用下部電
極を損傷することなく、スリット部の切断によってピク
セル電極の最も小さな面積の領域だけ無機能電極として
切断することができるという効果を有する。すなわち本
発明の薄膜トランジスタを液晶パネル駆動用に応用した
場合には、ドレインからソースへ注入された電荷を保持
するピクセル電極は対向するカラーフィルタ電極との間
にコンデンサを形成し、このコンデンサ領域内に存在す
る液晶はピクセル電極上の電荷に応じて液晶パネル内に
おいて配向する。従って、ピクセル電極の面積が大きい
ほど、駆動する液晶の領域が広がって液晶駆動効率は増
す。一方、前記蓄積容量部の絶縁膜に視認性の困難な欠
損部が存在してピクセル電極部の電荷が流出する場合に
は、修復の安全性を高めるためにピクセル電極のできる
だけ広い面積の領域を無機能電極として切断することが
必要になる。本発明の薄膜トランジスタはこれら相矛盾
する両者の要求を共に満足させる効果があり、例えば、
本発明の半導体装置を用いた液晶パネルは全黒表示画面
において白点欠陥が著しく少なくなり、高画像品質を提
供するものである。[Effects of the Invention] As explained above, the present invention provides a slit in the transparent pixel electrode section near where the transparent storage capacitor lower electrode exists, so that the pixel electrode disposed in the upper layer and provided with the slit The visibility of the lower electrode is higher than that of the lower electrode. Therefore, the position of the lower electrode can be easily estimated from the position of the slit portion. Therefore, in the semiconductor device of the present invention, only the smallest area of the pixel electrode can be cut off as a non-functional electrode by cutting the slit portion, without damaging the storage-capacitance lower electrode, which is difficult to see. have an effect. That is, when the thin film transistor of the present invention is applied to drive a liquid crystal panel, a capacitor is formed between the pixel electrode that holds charge injected from the drain to the source and the opposing color filter electrode, and a capacitor is formed within this capacitor region. The liquid crystals present align within the liquid crystal panel depending on the charge on the pixel electrodes. Therefore, the larger the area of the pixel electrode, the wider the region of the liquid crystal to be driven and the higher the liquid crystal driving efficiency. On the other hand, if there is a defect in the insulating film of the storage capacitor part that is difficult to see and the charge in the pixel electrode part flows out, in order to improve the safety of repair, the area of the pixel electrode should be as wide as possible. It becomes necessary to cut it as a non-functional electrode. The thin film transistor of the present invention has the effect of satisfying both of these contradictory demands, for example:
A liquid crystal panel using the semiconductor device of the present invention has significantly fewer white spot defects on an all-black display screen and provides high image quality.
第１図は本発明の一実施例を模式的に表す平面図、第２
図は本発明の他の一実施例を模式的に表す平面図、第３
図は従来例を模式的に表す平面図、第４図は第３図中の
ＩＶ−ＩＶ線断面図である。
２・・・・・・・・・ゲート電極、
２′ ・・・・・・・・ゲート電極パスライン、３・・
・・・・・・・ゲート絶縁膜、層間絶縁膜、４・・・・
・・・・・非晶質シリコン、５・・・・・・・・・ドレ
イン電極、
５′ ・・・・・・・・ドレイン電極パスライン、６・
・・・・・・・・ソース電極、
７・・・・・・・・・ピクセル電極、
８ ・
・下部電極、
８′
・下部電極パスライン、
・スリット部。FIG. 1 is a plan view schematically showing one embodiment of the present invention, and FIG.
The figure is a plan view schematically showing another embodiment of the present invention.
The figure is a plan view schematically showing a conventional example, and FIG. 4 is a sectional view taken along the line IV--IV in FIG. 3. 2...Gate electrode, 2'...Gate electrode pass line, 3...
・・・・・・Gate insulating film, interlayer insulating film, 4...
......Amorphous silicon, 5...Drain electrode, 5'...Drain electrode pass line, 6.
...... Source electrode, 7... Pixel electrode, 8... Lower electrode, 8' - Lower electrode pass line, - Slit portion.
Claims (1)
ピクセル電極と、ピクセル電極の一部領域と絶縁膜を介
して対向する蓄積容量用の下部電極とを有する半導体装
置において、前記ピクセル電極の下部電極と重なる領域
の境界部にスリットを設けたことを特徴とする半導体装
置。In a semiconductor device having a pixel electrode connected to a data signal line via a thin film transistor, and a lower electrode for a storage capacitor facing a partial region of the pixel electrode with an insulating film interposed therebetween, the lower electrode overlaps with the lower electrode of the pixel electrode. A semiconductor device characterized in that a slit is provided at a boundary between regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2200250A JPH0483231A (en) | 1990-07-26 | 1990-07-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2200250A JPH0483231A (en) | 1990-07-26 | 1990-07-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0483231A true JPH0483231A (en) | 1992-03-17 |
Family
ID=16421268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2200250A Pending JPH0483231A (en) | 1990-07-26 | 1990-07-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0483231A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5520676A (en) * | 1991-10-01 | 1996-05-28 | The Procter & Gamble Company | Absorbent article having a unitary release member joined to a flap retaining member |
| US5578026A (en) * | 1992-06-30 | 1996-11-26 | The Procter & Gamble Company | Absorbent article having a unitary release material |
| WO2003014817A1 (en) * | 2001-08-08 | 2003-02-20 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display device |
| JP2006047957A (en) * | 2004-08-05 | 2006-02-16 | Au Optronics Corp | Thin film transistor array substrate and repairing method thereof |
| US7733433B2 (en) | 2005-09-15 | 2010-06-08 | Samsung Electronics Co., Ltd. | Liquid crystal display having a reduced number of data driving circuit chips |
-
1990
- 1990-07-26 JP JP2200250A patent/JPH0483231A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5520676A (en) * | 1991-10-01 | 1996-05-28 | The Procter & Gamble Company | Absorbent article having a unitary release member joined to a flap retaining member |
| US5578026A (en) * | 1992-06-30 | 1996-11-26 | The Procter & Gamble Company | Absorbent article having a unitary release material |
| WO2003014817A1 (en) * | 2001-08-08 | 2003-02-20 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display device |
| US7061572B2 (en) | 2001-08-08 | 2006-06-13 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display device with pixel electrode connecting portion and storage capacitor electrode performing initialization process |
| JP2006047957A (en) * | 2004-08-05 | 2006-02-16 | Au Optronics Corp | Thin film transistor array substrate and repairing method thereof |
| US7733433B2 (en) | 2005-09-15 | 2010-06-08 | Samsung Electronics Co., Ltd. | Liquid crystal display having a reduced number of data driving circuit chips |
| USRE44181E1 (en) | 2005-09-15 | 2013-04-30 | Samsung Display Co., Ltd. | Liquid crystal display having a reduced number of data driving circuit chips |
| USRE45187E1 (en) | 2005-09-15 | 2014-10-14 | Samsung Display Co., Ltd. | Liquid crystal display having a reduced number of data driving circuit chips |
| USRE46035E1 (en) | 2005-09-15 | 2016-06-21 | Samsung Display Co., Ltd. | Liquid crystal display having a reduced number of data driving circuit chips |
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