JPH0481550B2 - - Google Patents
Info
- Publication number
- JPH0481550B2 JPH0481550B2 JP14579785A JP14579785A JPH0481550B2 JP H0481550 B2 JPH0481550 B2 JP H0481550B2 JP 14579785 A JP14579785 A JP 14579785A JP 14579785 A JP14579785 A JP 14579785A JP H0481550 B2 JPH0481550 B2 JP H0481550B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- mixed crystal
- solution
- solution reservoir
- reservoir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 46
- 239000007788 liquid Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000007791 liquid phase Substances 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 10
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14579785A JPS627696A (ja) | 1985-07-04 | 1985-07-04 | 液相エピタキシャル成長方法及びその装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14579785A JPS627696A (ja) | 1985-07-04 | 1985-07-04 | 液相エピタキシャル成長方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS627696A JPS627696A (ja) | 1987-01-14 |
JPH0481550B2 true JPH0481550B2 (de) | 1992-12-24 |
Family
ID=15393370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14579785A Granted JPS627696A (ja) | 1985-07-04 | 1985-07-04 | 液相エピタキシャル成長方法及びその装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS627696A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6221792A (ja) * | 1985-07-18 | 1987-01-30 | Hitachi Cable Ltd | 液相エピタキシヤル成長装置 |
-
1985
- 1985-07-04 JP JP14579785A patent/JPS627696A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS627696A (ja) | 1987-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3632431A (en) | Method of crystallizing a binary semiconductor compound | |
US3715245A (en) | Selective liquid phase epitaxial growth process | |
US4088514A (en) | Method for epitaxial growth of thin semiconductor layer from solution | |
DE102006035377A1 (de) | Verfahren zur Herstellung eines Halbleiterkristalls | |
JPH0481550B2 (de) | ||
US4149914A (en) | Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy | |
US3785884A (en) | Method for depositing a semiconductor material on the substrate from the liquid phase | |
US3810794A (en) | Preparation of gap-si heterojunction by liquid phase epitaxy | |
US4427464A (en) | Liquid phase epitaxy | |
JP2008300603A (ja) | 半導体製造装置 | |
US7048797B2 (en) | Liquid-phase growth process and liquid-phase growth apparatus | |
CN88201086U (zh) | 新型水平滑动石墨舟 | |
KR100980822B1 (ko) | 압전성 단결정 성장 방법 | |
JPS6311597A (ja) | 液相エピタキシヤル成長方法及びその装置 | |
KR890004545B1 (ko) | 혼합반도체의 액상 에피택시를 위한 보우트 | |
van Oirschot et al. | LPE growth of DH laser structures with the double source method | |
JPS63144191A (ja) | 化合物半導体単結晶の製造方法と装置 | |
KR890004544B1 (ko) | 혼합 반도체의 액상 에피택시를 위한 보우트 | |
JPH0369587A (ja) | 液相エピタキシャル成長装置 | |
JPS5841798A (ja) | 液相エピタキシヤル成長法 | |
JPS6221792A (ja) | 液相エピタキシヤル成長装置 | |
JPH0818099A (ja) | 半導体発光素子の製造方法 | |
JPH0519516B2 (de) | ||
JPH06279178A (ja) | 半導体装置の製造方法およびその装置 | |
JPH08203838A (ja) | 化合物半導体の製造方法 |