JPH0481336B2 - - Google Patents
Info
- Publication number
- JPH0481336B2 JPH0481336B2 JP57105411A JP10541182A JPH0481336B2 JP H0481336 B2 JPH0481336 B2 JP H0481336B2 JP 57105411 A JP57105411 A JP 57105411A JP 10541182 A JP10541182 A JP 10541182A JP H0481336 B2 JPH0481336 B2 JP H0481336B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- region
- polysilicon
- forming
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000010030 laminating Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57105411A JPS58222556A (ja) | 1982-06-21 | 1982-06-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57105411A JPS58222556A (ja) | 1982-06-21 | 1982-06-21 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58222556A JPS58222556A (ja) | 1983-12-24 |
| JPH0481336B2 true JPH0481336B2 (US20020051482A1-20020502-M00020.png) | 1992-12-22 |
Family
ID=14406861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57105411A Granted JPS58222556A (ja) | 1982-06-21 | 1982-06-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58222556A (US20020051482A1-20020502-M00020.png) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0712064B2 (ja) * | 1985-10-11 | 1995-02-08 | 松下電子工業株式会社 | 半導体集積回路の製造方法 |
| DE3706278A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung und herstellungsverfahren hierfuer |
| JPH0734452B2 (ja) * | 1986-07-24 | 1995-04-12 | 三菱電機株式会社 | 半導体集積回路装置の製造方法 |
| JPH04229648A (ja) * | 1990-07-30 | 1992-08-19 | Nippon Motoroola Kk | 所定のエミッタ領域を有するトランジスタおよびその製作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591857A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55157257A (en) * | 1979-05-25 | 1980-12-06 | Nec Corp | Manufacture of mos integrated circuit |
| JPS567462A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
-
1982
- 1982-06-21 JP JP57105411A patent/JPS58222556A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591857A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55157257A (en) * | 1979-05-25 | 1980-12-06 | Nec Corp | Manufacture of mos integrated circuit |
| JPS567462A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58222556A (ja) | 1983-12-24 |
