JPH0480876B2 - - Google Patents
Info
- Publication number
- JPH0480876B2 JPH0480876B2 JP59270742A JP27074284A JPH0480876B2 JP H0480876 B2 JPH0480876 B2 JP H0480876B2 JP 59270742 A JP59270742 A JP 59270742A JP 27074284 A JP27074284 A JP 27074284A JP H0480876 B2 JPH0480876 B2 JP H0480876B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- synthesis
- particles
- seeds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 83
- 229910003460 diamond Inorganic materials 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000003786 synthesis reaction Methods 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000010419 fine particle Substances 0.000 claims description 10
- 239000012808 vapor phase Substances 0.000 claims description 6
- 238000001308 synthesis method Methods 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000002706 hydrostatic effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59270742A JPS61151095A (ja) | 1984-12-24 | 1984-12-24 | ダイヤモンド合成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59270742A JPS61151095A (ja) | 1984-12-24 | 1984-12-24 | ダイヤモンド合成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61151095A JPS61151095A (ja) | 1986-07-09 |
| JPH0480876B2 true JPH0480876B2 (enrdf_load_stackoverflow) | 1992-12-21 |
Family
ID=17490338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59270742A Granted JPS61151095A (ja) | 1984-12-24 | 1984-12-24 | ダイヤモンド合成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61151095A (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0717479B2 (ja) * | 1985-12-09 | 1995-03-01 | 京セラ株式会社 | ダイヤモンド膜の製造方法 |
| US5275798A (en) * | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
| US5284709A (en) * | 1987-03-30 | 1994-02-08 | Crystallume | Diamond materials with enhanced heat conductivity |
| US5413772A (en) * | 1987-03-30 | 1995-05-09 | Crystallume | Diamond film and solid particle composite structure and methods for fabricating same |
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| US5273825A (en) * | 1987-03-30 | 1993-12-28 | Crystallume | Article comprising regions of high thermal conductivity diamond on substrates |
| US5270114A (en) * | 1987-03-30 | 1993-12-14 | Crystallume | High thermal conductivity diamond/non-diamond composite materials |
| JPH0623430B2 (ja) * | 1987-07-13 | 1994-03-30 | 株式会社半導体エネルギ−研究所 | 炭素作製方法 |
| US5183685A (en) * | 1987-07-13 | 1993-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Diamond film deposition by ECR CVD using a catalyst gas |
| DE69131846T2 (de) * | 1990-10-05 | 2000-05-18 | Sumitomo Electric Industries, Ltd. | Hartmaterial mit diamant bekleidet, wegwerfeinsatz, und methode zum herstellen dieses materials und einsatzes |
| US5298286A (en) * | 1992-11-09 | 1994-03-29 | North Carolina State University | Method for fabricating diamond films on nondiamond substrates and related structures |
| US5503104A (en) * | 1995-03-27 | 1996-04-02 | General Electric Company | Synthetic diamond product |
-
1984
- 1984-12-24 JP JP59270742A patent/JPS61151095A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61151095A (ja) | 1986-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4228142A (en) | Process for producing diamond-like carbon | |
| CN1053455C (zh) | 制备磨料制品的方法 | |
| JPH0480876B2 (enrdf_load_stackoverflow) | ||
| US4547257A (en) | Method for growing diamond crystals | |
| Khmelnitskiy | Prospects for the synthesis of large single-crystal diamonds | |
| JP2001081564A (ja) | 化学気相蒸着装置およびこれを用いたカーボンナノチューブ合成方法 | |
| JPH0288497A (ja) | 単結晶ダイヤモンド粒子の製造方法 | |
| JP3121102B2 (ja) | 平板ダイヤモンド結晶、及びその形成方法 | |
| JPS61158898A (ja) | 装飾用ダイヤモンドの製造方法 | |
| US5268201A (en) | Composite diamond grain and method for production thereof | |
| JPH0253396B2 (enrdf_load_stackoverflow) | ||
| JP3296134B2 (ja) | ダイヤモンドウエハ−とその製造方法 | |
| JPS62119B2 (enrdf_load_stackoverflow) | ||
| JPS631280B2 (enrdf_load_stackoverflow) | ||
| JP3209789B2 (ja) | ポリシリコン薄膜堆積物およびその製法 | |
| JPS61201698A (ja) | ダイヤモンド膜およびその製造法 | |
| JPH01317111A (ja) | 多結晶質ダイヤモンド砥粒及びその製法 | |
| JPH06271398A (ja) | ダイヤモンド単結晶膜の形成方法 | |
| Huh et al. | Enhanced nucleation of diamond on polycrystalline Ni by dc glow discharge in hot filament CVD | |
| JP2614870B2 (ja) | 多結晶質ダイヤモンド焼結体の製造法 | |
| JPH01242490A (ja) | 粗粒の人工ダイヤモンド結晶の製造法 | |
| JPH01103987A (ja) | 気相法によるダイヤモンド合成法 | |
| JPS6344719B2 (enrdf_load_stackoverflow) | ||
| CA2110414A1 (en) | Electrode for use in plasma etching | |
| JPH052369B2 (enrdf_load_stackoverflow) |