JPH0480851B2 - - Google Patents

Info

Publication number

JPH0480851B2

JPH0480851B2 JP22226684A JP22226684A JPH0480851B2 JP H0480851 B2 JPH0480851 B2 JP H0480851B2 JP 22226684 A JP22226684 A JP 22226684A JP 22226684 A JP22226684 A JP 22226684A JP H0480851 B2 JPH0480851 B2 JP H0480851B2

Authority

JP

Japan

Prior art keywords

monosilane

trisilane

adsorption

disilane

type zeolite

Prior art date

1984-10-24

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

Links

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• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 34
• XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 30
• 238000000034 method Methods 0.000 claims description 21
• HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 15
• 239000010457 zeolite Substances 0.000 claims description 15
• 229910021536 Zeolite Inorganic materials 0.000 claims description 14
• 229910000077 silane Inorganic materials 0.000 claims description 14
• 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 11
• 239000007789 gas Substances 0.000 description 17
• 238000001179 sorption measurement Methods 0.000 description 14
• VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 13
• PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 12
• 239000012535 impurity Substances 0.000 description 12
• 238000005273 aeration Methods 0.000 description 5
• 229910052680 mordenite Inorganic materials 0.000 description 5
• 239000004065 semiconductor Substances 0.000 description 5
• 239000002994 raw material Substances 0.000 description 4
• HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
• 150000001768 cations Chemical class 0.000 description 3
• 238000010438 heat treatment Methods 0.000 description 3
• 238000005342 ion exchange Methods 0.000 description 3
• 238000000746 purification Methods 0.000 description 3
• 159000000000 sodium salts Chemical group 0.000 description 3
• 239000011701 zinc Substances 0.000 description 3
• 229910052725 zinc Inorganic materials 0.000 description 3
• OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
• 239000001257 hydrogen Substances 0.000 description 2
• 229910052739 hydrogen Inorganic materials 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 239000000203 mixture Substances 0.000 description 2
• 239000011734 sodium Substances 0.000 description 2
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
• UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
• DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
• VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• 230000004913 activation Effects 0.000 description 1
• 229910021417 amorphous silicon Inorganic materials 0.000 description 1
• RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
• 238000009835 boiling Methods 0.000 description 1
• 239000012611 container material Substances 0.000 description 1
• 229910021419 crystalline silicon Inorganic materials 0.000 description 1
• 238000010790 dilution Methods 0.000 description 1
• 239000012895 dilution Substances 0.000 description 1
• 238000004821 distillation Methods 0.000 description 1
• 239000001307 helium Substances 0.000 description 1
• 229910052734 helium Inorganic materials 0.000 description 1
• SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
• 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
• 239000011261 inert gas Substances 0.000 description 1
• 239000007788 liquid Substances 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1
• 229910052708 sodium Inorganic materials 0.000 description 1
• 239000000126 substance Substances 0.000 description 1
• -1 zinc is too large Chemical class 0.000 description 1