JPH0480047U - - Google Patents
Info
- Publication number
- JPH0480047U JPH0480047U JP12538990U JP12538990U JPH0480047U JP H0480047 U JPH0480047 U JP H0480047U JP 12538990 U JP12538990 U JP 12538990U JP 12538990 U JP12538990 U JP 12538990U JP H0480047 U JPH0480047 U JP H0480047U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- damper diode
- base
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図はこの考案の一実施例のトランジスタの
エミツタボンデイングパツド部の断面図である。
第２図は第１図の構造を有するトランジスタの等
価回路図である。第３図は従来のダンパーダイオ
ードを形成したトランジスタのエミツタボンデイ
ングパツド部の断面図である。第４図は第３図の
構造を有するトランジスタの等価回路図である。
１……コレクタ、２……ベース、２ａ……ダン
パーダイオード部のベース、３……エミツタ、４
……エミツタ金属電極、１０……トランジスタ、
１１……ダンパーダイオード。
FIG. 1 is a sectional view of the emitter bonding pad portion of a transistor according to an embodiment of the invention.
FIG. 2 is an equivalent circuit diagram of a transistor having the structure shown in FIG. FIG. 3 is a sectional view of the emitter bonding pad portion of a transistor in which a conventional damper diode is formed. FIG. 4 is an equivalent circuit diagram of a transistor having the structure shown in FIG. 1... Collector, 2... Base, 2a... Base of damper diode section, 3... Emitter, 4
... Emitter metal electrode, 10 ... Transistor,
11...damper diode.
Claims (1)
有するトランジスタにおいて、 ダンパーダイオードを構成するベースをトラン
ジスタのベースから分離して形成した構造を有す
ることを特徴とするトランジスタ。[Claims for Utility Model Registration] A transistor having a damper diode between the collector and emitter, characterized in that the transistor has a structure in which the base constituting the damper diode is separated from the base of the transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990125389U JPH087629Y2 (en) | 1990-11-27 | 1990-11-27 | Transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990125389U JPH087629Y2 (en) | 1990-11-27 | 1990-11-27 | Transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0480047U true JPH0480047U (en) | 1992-07-13 |
| JPH087629Y2 JPH087629Y2 (en) | 1996-03-04 |
Family
ID=31872989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990125389U Expired - Lifetime JPH087629Y2 (en) | 1990-11-27 | 1990-11-27 | Transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087629Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61107773A (en) * | 1984-10-30 | 1986-05-26 | Mitsubishi Electric Corp | Semiconductor device |
| JPS62263674A (en) * | 1986-05-12 | 1987-11-16 | Toshiba Corp | Semiconductor device |
-
1990
- 1990-11-27 JP JP1990125389U patent/JPH087629Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61107773A (en) * | 1984-10-30 | 1986-05-26 | Mitsubishi Electric Corp | Semiconductor device |
| JPS62263674A (en) * | 1986-05-12 | 1987-11-16 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH087629Y2 (en) | 1996-03-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |