JPH0476234B2 - - Google Patents

Info

Publication number
JPH0476234B2
JPH0476234B2 JP59222695A JP22269584A JPH0476234B2 JP H0476234 B2 JPH0476234 B2 JP H0476234B2 JP 59222695 A JP59222695 A JP 59222695A JP 22269584 A JP22269584 A JP 22269584A JP H0476234 B2 JPH0476234 B2 JP H0476234B2
Authority
JP
Japan
Prior art keywords
layer
electrode
radiation detector
crystal
cdte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59222695A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61100978A (ja
Inventor
Juzo Ozaki
Haruo Hosomatsu
Morio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP59222695A priority Critical patent/JPS61100978A/ja
Publication of JPS61100978A publication Critical patent/JPS61100978A/ja
Publication of JPH0476234B2 publication Critical patent/JPH0476234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP59222695A 1984-10-23 1984-10-23 放射線検出器及び製造方法 Granted JPS61100978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59222695A JPS61100978A (ja) 1984-10-23 1984-10-23 放射線検出器及び製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59222695A JPS61100978A (ja) 1984-10-23 1984-10-23 放射線検出器及び製造方法

Publications (2)

Publication Number Publication Date
JPS61100978A JPS61100978A (ja) 1986-05-19
JPH0476234B2 true JPH0476234B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=16786465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59222695A Granted JPS61100978A (ja) 1984-10-23 1984-10-23 放射線検出器及び製造方法

Country Status (1)

Country Link
JP (1) JPS61100978A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts

Also Published As

Publication number Publication date
JPS61100978A (ja) 1986-05-19

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