JPH0534610B2 - - Google Patents

Info

Publication number
JPH0534610B2
JPH0534610B2 JP62503110A JP50311087A JPH0534610B2 JP H0534610 B2 JPH0534610 B2 JP H0534610B2 JP 62503110 A JP62503110 A JP 62503110A JP 50311087 A JP50311087 A JP 50311087A JP H0534610 B2 JPH0534610 B2 JP H0534610B2
Authority
JP
Japan
Prior art keywords
layer
detector
radiation
contact
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62503110A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01500536A (ja
Inventor
Buruin Yohanesu Bii De
Merii Jei Heuitsuto
Jeemusu Dei Fuiritsupu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Publication of JPH01500536A publication Critical patent/JPH01500536A/ja
Publication of JPH0534610B2 publication Critical patent/JPH0534610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
JP62503110A 1986-06-26 1987-05-15 半導体放射線検出器 Granted JPH01500536A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87894686A 1986-06-26 1986-06-26
US878,946 1986-06-26

Publications (2)

Publication Number Publication Date
JPH01500536A JPH01500536A (ja) 1989-02-23
JPH0534610B2 true JPH0534610B2 (enrdf_load_stackoverflow) 1993-05-24

Family

ID=25373136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62503110A Granted JPH01500536A (ja) 1986-06-26 1987-05-15 半導体放射線検出器

Country Status (4)

Country Link
EP (1) EP0271522A1 (enrdf_load_stackoverflow)
JP (1) JPH01500536A (enrdf_load_stackoverflow)
IL (1) IL82600A (enrdf_load_stackoverflow)
WO (1) WO1988000397A1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001532A (en) * 1989-09-06 1991-03-19 Rockwell International Corporation Impurity band conduction detector having photoluminescent layer
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
JPH0485961A (ja) * 1990-07-30 1992-03-18 Mitsubishi Electric Corp 光検知装置
DE102009023807A1 (de) 2009-06-03 2010-12-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren
CN102280456B (zh) * 2011-05-11 2013-06-26 北京大学 一种红外焦平面阵列探测器集成结构及制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451842A (en) * 1980-12-29 1984-05-29 Rockwell International Corporation Large scale integrated focal plane
US4507674A (en) * 1982-06-07 1985-03-26 Hughes Aircraft Company Backside illuminated blocked impurity band infrared detector
JPS5925164A (ja) * 1982-07-30 1984-02-09 Kanai Hiroyuki アルカリ電池用セパレ−タ

Also Published As

Publication number Publication date
JPH01500536A (ja) 1989-02-23
EP0271522A1 (en) 1988-06-22
IL82600A (en) 1991-06-30
WO1988000397A1 (en) 1988-01-14

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