JPH0476202B2 - - Google Patents
Info
- Publication number
- JPH0476202B2 JPH0476202B2 JP17074683A JP17074683A JPH0476202B2 JP H0476202 B2 JPH0476202 B2 JP H0476202B2 JP 17074683 A JP17074683 A JP 17074683A JP 17074683 A JP17074683 A JP 17074683A JP H0476202 B2 JPH0476202 B2 JP H0476202B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- thickness
- mixed crystal
- lattice
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17074683A JPS6062109A (ja) | 1983-09-16 | 1983-09-16 | 化合物半導体材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17074683A JPS6062109A (ja) | 1983-09-16 | 1983-09-16 | 化合物半導体材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6062109A JPS6062109A (ja) | 1985-04-10 |
| JPH0476202B2 true JPH0476202B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Family
ID=15910618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17074683A Granted JPS6062109A (ja) | 1983-09-16 | 1983-09-16 | 化合物半導体材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6062109A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0418796Y2 (enrdf_load_stackoverflow) * | 1985-04-25 | 1992-04-27 | ||
| JP2013187309A (ja) * | 2012-03-07 | 2013-09-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
1983
- 1983-09-16 JP JP17074683A patent/JPS6062109A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6062109A (ja) | 1985-04-10 |
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