JPH0475654B2 - - Google Patents
Info
- Publication number
- JPH0475654B2 JPH0475654B2 JP58113751A JP11375183A JPH0475654B2 JP H0475654 B2 JPH0475654 B2 JP H0475654B2 JP 58113751 A JP58113751 A JP 58113751A JP 11375183 A JP11375183 A JP 11375183A JP H0475654 B2 JPH0475654 B2 JP H0475654B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- semiconductor wafer
- carbon electrode
- plasma cvd
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/60—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113751A JPS607134A (ja) | 1983-06-24 | 1983-06-24 | プラズマcvd装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113751A JPS607134A (ja) | 1983-06-24 | 1983-06-24 | プラズマcvd装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS607134A JPS607134A (ja) | 1985-01-14 |
| JPH0475654B2 true JPH0475654B2 (enExample) | 1992-12-01 |
Family
ID=14620196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58113751A Granted JPS607134A (ja) | 1983-06-24 | 1983-06-24 | プラズマcvd装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607134A (enExample) |
-
1983
- 1983-06-24 JP JP58113751A patent/JPS607134A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS607134A (ja) | 1985-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI857541B (zh) | 改良的鍺蝕刻系統及方法 | |
| US6071797A (en) | Method for forming amorphous carbon thin film by plasma chemical vapor deposition | |
| EP0658918B1 (en) | Plasma processing apparatus | |
| KR20090125039A (ko) | 사전 시즌된 샤워헤드를 갖는 플라즈마 반응 장치 및 그 제조 방법 | |
| CN103534383B (zh) | 薄膜形成装置 | |
| US5861059A (en) | Method for selective growth of silicon epitaxial film | |
| JP2000260721A (ja) | 化学的気相成長装置、化学的気相成長方法および化学的気相成長装置のクリーニング方法 | |
| JP3631903B2 (ja) | プラズマ化学蒸着装置 | |
| JPH0475654B2 (enExample) | ||
| JPH07142400A (ja) | プラズマ処理方法及び装置 | |
| JPS6331110A (ja) | 半導体装置の製造方法 | |
| JP3259452B2 (ja) | プラズマcvd装置に用いる電極及びプラズマcvd装置 | |
| JPH04277627A (ja) | 枚葉型プラズマ化学気相成長装置 | |
| JP3259453B2 (ja) | プラズマcvd装置に用いる電極及びプラズマcvd装置 | |
| JPS5941773B2 (ja) | 気相成長方法及び装置 | |
| JP3261795B2 (ja) | プラズマ処理装置 | |
| JPH01188678A (ja) | プラズマ気相成長装置 | |
| JPS6140770Y2 (enExample) | ||
| JPH0891987A (ja) | プラズマ化学蒸着装置 | |
| JP2800248B2 (ja) | 化学気相成長装置及び化学気相成長方法 | |
| JPS6128372B2 (enExample) | ||
| JP2609844B2 (ja) | エピタキシヤル成長方法 | |
| JP2617328B2 (ja) | 炭素膜のエッチング方法 | |
| JPH06101458B2 (ja) | プラズマ気相成長装置 | |
| KR100372537B1 (ko) | 플라즈마성막방법 및 반도체장치의 제조장치 |