JPH0475649B2 - - Google Patents

Info

Publication number
JPH0475649B2
JPH0475649B2 JP58250046A JP25004683A JPH0475649B2 JP H0475649 B2 JPH0475649 B2 JP H0475649B2 JP 58250046 A JP58250046 A JP 58250046A JP 25004683 A JP25004683 A JP 25004683A JP H0475649 B2 JPH0475649 B2 JP H0475649B2
Authority
JP
Japan
Prior art keywords
film
silicon
crystal
growing
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58250046A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60140813A (ja
Inventor
Ryoichi Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58250046A priority Critical patent/JPS60140813A/ja
Publication of JPS60140813A publication Critical patent/JPS60140813A/ja
Publication of JPH0475649B2 publication Critical patent/JPH0475649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
JP58250046A 1983-12-28 1983-12-28 半導体装置の製造方法 Granted JPS60140813A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58250046A JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58250046A JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60140813A JPS60140813A (ja) 1985-07-25
JPH0475649B2 true JPH0475649B2 (enExample) 1992-12-01

Family

ID=17202005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58250046A Granted JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60140813A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111610A (ja) * 1986-10-30 1988-05-16 Sharp Corp 半導体基板
US5173443A (en) * 1987-02-13 1992-12-22 Northrop Corporation Method of manufacture of optically transparent electrically conductive semiconductor windows
JP2813978B2 (ja) * 1987-05-25 1998-10-22 シャープ株式会社 半導体基板
JP2828980B2 (ja) * 1987-12-11 1998-11-25 株式会社日立製作所 半導体結晶の製造方法
US5250452A (en) * 1990-04-27 1993-10-05 North Carolina State University Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
CN102171789A (zh) * 2008-10-02 2011-08-31 住友化学株式会社 半导体基板，电子器件，以及半导体基板的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT *

Also Published As

Publication number Publication date
JPS60140813A (ja) 1985-07-25

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