JPH0474876B2 - - Google Patents
Info
- Publication number
- JPH0474876B2 JPH0474876B2 JP57108706A JP10870682A JPH0474876B2 JP H0474876 B2 JPH0474876 B2 JP H0474876B2 JP 57108706 A JP57108706 A JP 57108706A JP 10870682 A JP10870682 A JP 10870682A JP H0474876 B2 JPH0474876 B2 JP H0474876B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- window
- region
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000010355 oscillation Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10870682A JPS58225681A (ja) | 1982-06-23 | 1982-06-23 | 半導体レ−ザ素子 |
| US06/476,844 US4546481A (en) | 1982-05-28 | 1983-03-18 | Window structure semiconductor laser |
| DE8383301600T DE3376936D1 (en) | 1982-05-28 | 1983-03-22 | Semiconductor laser |
| EP83301600A EP0095826B1 (de) | 1982-05-28 | 1983-03-22 | Halbleiterlaser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10870682A JPS58225681A (ja) | 1982-06-23 | 1982-06-23 | 半導体レ−ザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58225681A JPS58225681A (ja) | 1983-12-27 |
| JPH0474876B2 true JPH0474876B2 (de) | 1992-11-27 |
Family
ID=14491540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10870682A Granted JPS58225681A (ja) | 1982-05-28 | 1982-06-23 | 半導体レ−ザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58225681A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61289689A (ja) * | 1985-06-18 | 1986-12-19 | Mitsubishi Electric Corp | 半導体発光装置 |
| JP2823228B2 (ja) * | 1988-11-29 | 1998-11-11 | 三洋電機株式会社 | 半導体レーザ装置及びその製造方法 |
| JPH02148786A (ja) * | 1988-11-29 | 1990-06-07 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
| EP0402556B1 (de) * | 1989-06-16 | 1993-10-06 | International Business Machines Corporation | Methode zur Verbesserung der Ebenheit geätzter Spiegelfacetten |
| JP2009105184A (ja) | 2007-10-23 | 2009-05-14 | Sharp Corp | 窒化物系半導体レーザ素子とその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150288A (en) * | 1979-05-10 | 1980-11-22 | Sony Corp | Semiconductor laser |
-
1982
- 1982-06-23 JP JP10870682A patent/JPS58225681A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150288A (en) * | 1979-05-10 | 1980-11-22 | Sony Corp | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58225681A (ja) | 1983-12-27 |
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