JPH0474421U - - Google Patents
Info
- Publication number
- JPH0474421U JPH0474421U JP11812890U JP11812890U JPH0474421U JP H0474421 U JPH0474421 U JP H0474421U JP 11812890 U JP11812890 U JP 11812890U JP 11812890 U JP11812890 U JP 11812890U JP H0474421 U JPH0474421 U JP H0474421U
- Authority
- JP
- Japan
- Prior art keywords
- secondary electrons
- ion beam
- workpiece
- etching apparatus
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 3
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11812890U JPH0474421U (https=) | 1990-11-09 | 1990-11-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11812890U JPH0474421U (https=) | 1990-11-09 | 1990-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0474421U true JPH0474421U (https=) | 1992-06-30 |
Family
ID=31866037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11812890U Pending JPH0474421U (https=) | 1990-11-09 | 1990-11-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0474421U (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017519364A (ja) * | 2014-06-30 | 2017-07-13 | 東京エレクトロン株式会社 | 有機化合物ガス環境中でのCu含有層の中性ビームエッチング |
-
1990
- 1990-11-09 JP JP11812890U patent/JPH0474421U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017519364A (ja) * | 2014-06-30 | 2017-07-13 | 東京エレクトロン株式会社 | 有機化合物ガス環境中でのCu含有層の中性ビームエッチング |
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