JPH0474421U - - Google Patents
Info
- Publication number
- JPH0474421U JPH0474421U JP11812890U JP11812890U JPH0474421U JP H0474421 U JPH0474421 U JP H0474421U JP 11812890 U JP11812890 U JP 11812890U JP 11812890 U JP11812890 U JP 11812890U JP H0474421 U JPH0474421 U JP H0474421U
- Authority
- JP
- Japan
- Prior art keywords
- secondary electrons
- ion beam
- workpiece
- etching apparatus
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 3
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の一実施例のイオンエツチング
装置の模式断面図である。
１……イオン源、２……コンデンサレンズ、３
……マスフイルタ、４……対物レンズ、５……デ
イフレクタ、６……被加工物、７……フイラメン
ト、８……ターゲツト。
FIG. 1 is a schematic sectional view of an ion etching apparatus according to an embodiment of the present invention. 1...Ion source, 2...Condenser lens, 3
... Mass filter, 4 ... Objective lens, 5 ... Deflector, 6 ... Workpiece, 7 ... Filament, 8 ... Target.
Claims (1)
びコンデンサレンズと、この加速されたイオンビ
ームより不要のイオンを除外するマスフイルタと
、不要イオンが除外されたイオンビームを収束す
る収束レンズと、この収束されたイオンビームを
被加工物面に偏向走査するデイフレクタと、前記
被加工物より発生する二次電子を捕捉するととも
にこの二次電子を取り込み画像処理する観察手段
とを有するイオンエツチング装置において、前記
被加工物と前記デイフレクタとの間に配置される
とともに熱電子を発生するカソードと、このカソ
ードに対向する位置に配置されるダーゲツトとを
有し、前記熱電子を加速して前記ターゲツトに衝
突させて別の二次電子を発生し、かつこの別の二
次電子を前記被加工物に浴びせることを特徴とす
るイオンエツチング装置。 An ion source and a condenser lens that generate an accelerated ion beam, a mass filter that excludes unnecessary ions from this accelerated ion beam, a converging lens that converges the ion beam from which unnecessary ions have been removed, and In the ion etching apparatus, the ion etching apparatus includes a deflector that deflects and scans an ion beam onto the surface of the workpiece, and an observation means that captures secondary electrons generated from the workpiece and captures the secondary electrons for image processing. It has a cathode that is placed between an object and the deflector and generates thermoelectrons, and a target that is placed opposite to the cathode, and accelerates the thermal electrons to collide with the target and separate them. An ion etching apparatus characterized in that it generates secondary electrons and bombards the workpiece with the other secondary electrons.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11812890U JPH0474421U (en) | 1990-11-09 | 1990-11-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11812890U JPH0474421U (en) | 1990-11-09 | 1990-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0474421U true JPH0474421U (en) | 1992-06-30 |
Family
ID=31866037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11812890U Pending JPH0474421U (en) | 1990-11-09 | 1990-11-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0474421U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017519364A (en) * | 2014-06-30 | 2017-07-13 | 東京エレクトロン株式会社 | Neutral beam etching of Cu-containing layers in organic gas environments |
-
1990
- 1990-11-09 JP JP11812890U patent/JPH0474421U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017519364A (en) * | 2014-06-30 | 2017-07-13 | 東京エレクトロン株式会社 | Neutral beam etching of Cu-containing layers in organic gas environments |
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