JPH0473638B2 - - Google Patents
Info
- Publication number
- JPH0473638B2 JPH0473638B2 JP59281765A JP28176584A JPH0473638B2 JP H0473638 B2 JPH0473638 B2 JP H0473638B2 JP 59281765 A JP59281765 A JP 59281765A JP 28176584 A JP28176584 A JP 28176584A JP H0473638 B2 JPH0473638 B2 JP H0473638B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tellurium
- type
- germanium
- conduction electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P14/2911—
-
- H10P14/263—
-
- H10P14/265—
-
- H10P14/3421—
-
- H10P14/3442—
-
- H10P14/3444—
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59281765A JPS61156727A (ja) | 1984-12-27 | 1984-12-27 | 化合物半導体装置およびその製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59281765A JPS61156727A (ja) | 1984-12-27 | 1984-12-27 | 化合物半導体装置およびその製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61156727A JPS61156727A (ja) | 1986-07-16 |
| JPH0473638B2 true JPH0473638B2 (show.php) | 1992-11-24 |
Family
ID=17643655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59281765A Granted JPS61156727A (ja) | 1984-12-27 | 1984-12-27 | 化合物半導体装置およびその製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156727A (show.php) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5598910A (en) * | 1993-11-01 | 1997-02-04 | Kabushikikaisha Equos Research | Clutch mechanism |
| EP1653103A3 (de) | 2004-10-26 | 2007-09-26 | LuK Lamellen und Kupplungsbau Beteiligungs KG | Kupplungsscheibenanordnung für eine Mehrscheibenkupplung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5388A (en) * | 1976-06-24 | 1978-01-05 | Hitachi Ltd | Iii-v group chemical compound semiconductor element and its manufacture |
| JPS59169186A (ja) * | 1983-03-16 | 1984-09-25 | Toshiba Corp | 発光ダイオ−ドの製造方法 |
-
1984
- 1984-12-27 JP JP59281765A patent/JPS61156727A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61156727A (ja) | 1986-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0274088A (ja) | 半導体レーザ装置 | |
| CA1049127A (en) | Semiconductor devices with improved heat radiation and current concentration | |
| US4479222A (en) | Diffusion barrier for long wavelength laser diodes | |
| JP2908815B2 (ja) | 少なくとも1.4電子ボルトの禁止帯幅を有する広禁止帯幅半導体の結晶のドーピング方法 | |
| GB2284705A (en) | Light emitting diodes with modified window layers | |
| US3600240A (en) | Epitaxial growth from solution with amphoteric dopant | |
| JP2579326B2 (ja) | エピタキシャル・ウエハ及び発光ダイオード | |
| JPH0473638B2 (show.php) | ||
| US5323027A (en) | Light emitting device with double heterostructure | |
| JPH055191B2 (show.php) | ||
| JPS59225580A (ja) | 半導体発光ダイオ−ドおよびその製造方法 | |
| JPH08139358A (ja) | エピタキシャルウエーハ | |
| JPH02202085A (ja) | 半導体レーザ装置の製造方法 | |
| JPH02110983A (ja) | 発光半導体素子用エピタキシャルウェーハの製造方法 | |
| RU2031477C1 (ru) | СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ СТРУКТУР НА ОСНОВЕ СОЕДИНЕНИЙ AIII и BV МЕТОДОМ ЖИДКОФАЗНОЙ ЭПИТАКСИИ | |
| JPS6244717B2 (show.php) | ||
| JPH0658976B2 (ja) | 化合物半導体装置の製造方法 | |
| JPS6381852A (ja) | 半導体ヘテロ接合バイポ−ラデバイス | |
| JPH0351674B2 (show.php) | ||
| US6794731B2 (en) | Minority carrier semiconductor devices with improved reliability | |
| JPS6244716B2 (show.php) | ||
| JP2841849B2 (ja) | エピタキシャルウェハの製造方法 | |
| JPH0242771A (ja) | 発光半導体素子基板及びその製造方法 | |
| JPH0464456B2 (show.php) | ||
| JPH0214317B2 (show.php) |