JPH0473638B2 - - Google Patents

Info

Publication number
JPH0473638B2
JPH0473638B2 JP59281765A JP28176584A JPH0473638B2 JP H0473638 B2 JPH0473638 B2 JP H0473638B2 JP 59281765 A JP59281765 A JP 59281765A JP 28176584 A JP28176584 A JP 28176584A JP H0473638 B2 JPH0473638 B2 JP H0473638B2
Authority
JP
Japan
Prior art keywords
layer
tellurium
type
germanium
conduction electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59281765A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61156727A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59281765A priority Critical patent/JPS61156727A/ja
Publication of JPS61156727A publication Critical patent/JPS61156727A/ja
Publication of JPH0473638B2 publication Critical patent/JPH0473638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP59281765A 1984-12-27 1984-12-27 化合物半導体装置およびその製法 Granted JPS61156727A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281765A JPS61156727A (ja) 1984-12-27 1984-12-27 化合物半導体装置およびその製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281765A JPS61156727A (ja) 1984-12-27 1984-12-27 化合物半導体装置およびその製法

Publications (2)

Publication Number Publication Date
JPS61156727A JPS61156727A (ja) 1986-07-16
JPH0473638B2 true JPH0473638B2 (enrdf_load_stackoverflow) 1992-11-24

Family

ID=17643655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281765A Granted JPS61156727A (ja) 1984-12-27 1984-12-27 化合物半導体装置およびその製法

Country Status (1)

Country Link
JP (1) JPS61156727A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598910A (en) * 1993-11-01 1997-02-04 Kabushikikaisha Equos Research Clutch mechanism
EP1653103A3 (de) 2004-10-26 2007-09-26 LuK Lamellen und Kupplungsbau Beteiligungs KG Kupplungsscheibenanordnung für eine Mehrscheibenkupplung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388A (en) * 1976-06-24 1978-01-05 Hitachi Ltd Iii-v group chemical compound semiconductor element and its manufacture
JPS59169186A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 発光ダイオ−ドの製造方法

Also Published As

Publication number Publication date
JPS61156727A (ja) 1986-07-16

Similar Documents

Publication Publication Date Title
CA1049127A (en) Semiconductor devices with improved heat radiation and current concentration
US4479222A (en) Diffusion barrier for long wavelength laser diodes
JPH0274088A (ja) 半導体レーザ装置
JP2908815B2 (ja) 少なくとも１．４電子ボルトの禁止帯幅を有する広禁止帯幅半導体の結晶のドーピング方法
US3600240A (en) Epitaxial growth from solution with amphoteric dopant
EP0301893B1 (en) A light-emitting semiconductor device
JP2579326B2 (ja) エピタキシャル・ウエハ及び発光ダイオード
JPH0473638B2 (enrdf_load_stackoverflow)
US5323027A (en) Light emitting device with double heterostructure
JPH055191B2 (enrdf_load_stackoverflow)
JPS59225580A (ja) 半導体発光ダイオ−ドおよびその製造方法
JPH08139358A (ja) エピタキシャルウエーハ
JPH02110983A (ja) 発光半導体素子用エピタキシャルウェーハの製造方法
RU2031477C1 (ru) СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ СТРУКТУР НА ОСНОВЕ СОЕДИНЕНИЙ AIII и BV МЕТОДОМ ЖИДКОФАЗНОЙ ЭПИТАКСИИ
JPH02202085A (ja) 半導体レーザ装置の製造方法
JPS6244717B2 (enrdf_load_stackoverflow)
JPH0658976B2 (ja) 化合物半導体装置の製造方法
JPH0351674B2 (enrdf_load_stackoverflow)
US6794731B2 (en) Minority carrier semiconductor devices with improved reliability
JPS6244716B2 (enrdf_load_stackoverflow)
JPS6381852A (ja) 半導体ヘテロ接合バイポ−ラデバイス
JP2841849B2 (ja) エピタキシャルウェハの製造方法
JPH0242771A (ja) 発光半導体素子基板及びその製造方法
JPH0464456B2 (enrdf_load_stackoverflow)
JPH0214317B2 (enrdf_load_stackoverflow)