JPH047102B2 - - Google Patents
Info
- Publication number
- JPH047102B2 JPH047102B2 JP3954383A JP3954383A JPH047102B2 JP H047102 B2 JPH047102 B2 JP H047102B2 JP 3954383 A JP3954383 A JP 3954383A JP 3954383 A JP3954383 A JP 3954383A JP H047102 B2 JPH047102 B2 JP H047102B2
- Authority
- JP
- Japan
- Prior art keywords
- frame
- inert gas
- lead frame
- bonding
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011261 inert gas Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000001603 reducing effect Effects 0.000 description 5
- 238000007664 blowing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はボンデイング部において行なわれる
半導体素子とリードフレームとを接続するワイヤ
ボンデイング工程において、ワイヤボンデイング
のボンデイング性を向上させることができる還元
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a reduction method that can improve the bonding performance of wire bonding in a wire bonding process for connecting a semiconductor element and a lead frame performed in a bonding section.
第１図を用いて従来のワイヤボンデイング工程
における還元方法について説明する。第１図Ａは
ボンデイング装置の平面図、第１図Ｂはその断面
図である。第１図において、薄板移送装置（図示
せず）から順次送られてきたリードフレーム１は
ボンデイング部において、リードフレーム１にマ
ウントされた半導体素子２とリードフレーム１と
をワイヤボンデイングされるが、その雰囲気は還
元性雰囲気にて行なわれる。これはリードフレー
ム１の酸化を防ぎ、リードフレーム１とワイヤと
の接続を良くするための処理である。このような
還元方法は、不活性ガスをリードフレーム１に吹
きつけることにより行なわれる。つまり、これは
半導体素子２とリードフレーム１を接続するワイ
ヤボンデイング時にヒータブロツク３とフレーム
押え蓋４との間に不活性ガスを流すことにより行
なわれる。このような不活性ガスの流路は矢印Ａ
に示すようにしてヒータブロツク３内を流れる不
活性ガスは、ヒータブロツク３内を通過すること
により温められて、ヒータブロツク上蓋５で集め
られて、このヒータブロツク上蓋５に設けられた
複数の孔６より上方に吹き出される。そして、孔
６より上方に吹き出された不活性ガスはリードフ
レーム１を通過してフレーム押え蓋４で受けとら
れてフレーム押え上蓋７に入る。そして、このフ
レーム押え上蓋７において不活性ガスは循環され
て、リードフレーム１にある半導体素子２に開孔
８を通して噴射されていた。このようにして、ワ
イヤボンデイング時の還元を行なつていた。
A reduction method in a conventional wire bonding process will be explained using FIG. FIG. 1A is a plan view of the bonding apparatus, and FIG. 1B is a sectional view thereof. In FIG. 1, lead frames 1 are sequentially sent from a thin plate transfer device (not shown), and in a bonding section, a semiconductor element 2 mounted on the lead frame 1 is wire-bonded to the lead frame 1. The atmosphere is a reducing atmosphere. This is a treatment for preventing oxidation of the lead frame 1 and improving the connection between the lead frame 1 and the wire. Such a reduction method is performed by blowing an inert gas onto the lead frame 1. That is, this is done by flowing an inert gas between the heater block 3 and the frame holding lid 4 during wire bonding to connect the semiconductor element 2 and the lead frame 1. This type of inert gas flow path is indicated by arrow A.
The inert gas flowing through the heater block 3 as shown in FIG. It is blown upward from 6. The inert gas blown upward from the hole 6 passes through the lead frame 1, is received by the frame presser cover 4, and enters the frame presser upper cover 7. The inert gas was circulated in the frame holding upper cover 7 and injected into the semiconductor element 2 in the lead frame 1 through the opening 8. In this way, reduction was performed during wire bonding.
しかし、第１図を用いて説明したような従来の
還元方法は以下に記述するような欠点があつた。
However, the conventional reduction method as explained using FIG. 1 has the following drawbacks.
(1) リードフレーム１の厚さが厚くなる（例え
ば、ヒートシンクなど）と、ヒータブロツク３
とフレーム押え蓋４とのすき間が広くなり、ヒ
ータブロツク３で温められた不活性ガスがその
すき間を通して外に吹き出てしまうため、フレ
ーム押え蓋４には集積されない。このため、不
活性ガスによる還元効果が減少し、リードフレ
ーム１とボンデイングワイヤとの接着性を著し
く低下させる。(1) If the lead frame 1 becomes thicker (for example, a heat sink), the heater block 3
The gap between the inert gas and the frame retainer lid 4 becomes wider, and the inert gas heated by the heater block 3 blows out through the gap, so that it is not accumulated on the frame retainer lid 4. Therefore, the reducing effect of the inert gas is reduced, and the adhesion between the lead frame 1 and the bonding wire is significantly reduced.
(2) また、上記した第１項で述べたリードフレー
ム１とボンデイングワイヤとの接着性を維持す
るためには不活性ガスの量を多くしなければな
らないため、不経済である。(2) Furthermore, in order to maintain the adhesiveness between the lead frame 1 and the bonding wire as described in the above-mentioned item 1, it is necessary to increase the amount of inert gas, which is uneconomical.
(3) ヒータブロツク３とフレーム押え蓋４との間
に熱的移動があり、リードフレーム１上の半導
体素子２の最適温度を下げてしまい、ボンデイ
ング性を著しく低下させる。(3) There is thermal movement between the heater block 3 and the frame holding lid 4, lowering the optimum temperature of the semiconductor element 2 on the lead frame 1, and significantly reducing bonding performance.
この発明は上記の点に鑑みてなされたもので、
その目的はボンデイング部において行なわれる半
導体素子とリードフレームとを接続するワイヤボ
ンデイング工程において、ボンデイングワイヤと
リードフレームとの接着性の向上、不活性ガスの
節約及び温度差の是正を行なうことができる還元
方法を提供することにある。
This invention was made in view of the above points,
Its purpose is to improve the adhesion between the bonding wire and the lead frame, save inert gas, and correct temperature differences in the wire bonding process that connects the semiconductor element and lead frame in the bonding section. The purpose is to provide a method.
フレーム押え蓋にヒータと不活性ガス流路を設
け、そのヒータによりフレーム押え蓋を温める。
そして、不活性ガス流路を通して流れる不活性ガ
スは温められたフレーム押え蓋により温められ
て、フレーム押え上蓋から半導体素子がマウント
されているリードフレームに吹きつけられる。従
つて、リードフレームが厚くなつてヒータブロツ
クとフレーム押え蓋とのすき間が大きくなつても
不活性ガスは上方より供給されるため、還元性雰
囲気を保つことができる。
A heater and an inert gas flow path are provided in the frame retainer lid, and the frame retainer lid is heated by the heater.
Then, the inert gas flowing through the inert gas flow path is heated by the heated frame presser cover, and is blown from the frame presser upper cover onto the lead frame on which the semiconductor element is mounted. Therefore, even if the lead frame becomes thicker and the gap between the heater block and the frame holding lid becomes larger, the inert gas is supplied from above, so that a reducing atmosphere can be maintained.
以下、図面を参照してこの発明の一実施例を説
明する。第２図はこの発明に係る還元方法が用い
られるボンデイング装置を示す。第２図Ａはボン
デイング装置の平面図、第２図Ｂはその断面図で
ある。第２図において、第１図と同一名称には同
一番号を付することにする。１１はフレーム押え
蓋４に取つけられたヒータで、このヒータ１１に
より上記フレーム押え蓋４及びフレーム押え下蓋
１２が温められる。上記フレーム押え蓋４には不
活性ガス経路Ｂ、Ｃが設けられており、この不活
性ガス経路Ｂ、Ｃを通る不活性ガスは上記ヒータ
１１により温められる。そして、上記不活性ガス
経路Ｂ、Ｃを通つた不活性ガスはフレーム押え蓋
４の開孔８のまわりを循環して、フレーム押え下
蓋１２とフレーム押え蓋４との隙間を流れて、リ
ードフレーム１及びリードフレーム１上にマウン
トされている半導体素子２に噴射される。
Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 2 shows a bonding apparatus in which the reduction method according to the present invention is used. FIG. 2A is a plan view of the bonding device, and FIG. 2B is a sectional view thereof. In FIG. 2, the same names as in FIG. 1 are given the same numbers. Reference numeral 11 denotes a heater attached to the frame presser cover 4, and the frame presser cover 4 and the frame presser lower cover 12 are warmed by this heater 11. The frame holding lid 4 is provided with inert gas paths B and C, and the inert gas passing through the inert gas paths B and C is heated by the heater 11. The inert gas that has passed through the inert gas paths B and C circulates around the opening 8 of the frame presser cover 4, flows through the gap between the frame presser lower cover 12 and the frame presser cover 4, and leads to the It is sprayed onto the frame 1 and the semiconductor element 2 mounted on the lead frame 1.
なお、例えばリードフレーム１にヒートシンク
などがあつた場合には熱伝導性を上げるためにヒ
ータブロツク３に溝を作り、ヒートシンクとリー
ドフレーム１との両方を温めるようにすればよ
い。 For example, if a heat sink or the like is attached to the lead frame 1, grooves may be formed in the heater block 3 to increase thermal conductivity so that both the heat sink and the lead frame 1 can be heated.
以上詳述したようにこの発明によれば、ボンデ
イング部において行なわれる半導体素子とリード
フレームとを接続するワイヤボンデイング工程に
おいて、リードフレームの厚さに関係なく、還元
性雰囲気を作りだすことができる。つまり、不活
性ガスを上方に供給源を持つようにしたので、リ
ードフレームが厚くなつてフレーム押え蓋とヒー
タブロツクとの隙間が大きくなつても無関係にリ
ードフレーム及び半導体素子に不活性ガスを吹き
つけることができる。さらに、従来のようにフレ
ーム押え蓋とヒータブロツクとの隙間があつた場
合に不活性ガスが無駄に吹き出すような不活性ガ
スの無駄を防止することができる。さらに、フレ
ーム押え蓋にもヒータを内蔵させたので、フレー
ム押え蓋とヒータとの間の温度差をなくすことが
できるので、ワイヤボンデイングの接着性を向上
させることができる。
As described in detail above, according to the present invention, a reducing atmosphere can be created regardless of the thickness of the lead frame in the wire bonding process for connecting the semiconductor element and the lead frame, which is performed in the bonding section. In other words, since the inert gas supply source is located above, even if the lead frame becomes thicker and the gap between the frame holding cover and the heater block becomes larger, the inert gas can be blown onto the lead frame and semiconductor elements regardless of the thickness of the lead frame. You can attach it. Furthermore, it is possible to prevent inert gas from being wasted, such as in the conventional case where there is a gap between the frame presser lid and the heater block, in which the inert gas is blown out unnecessarily. Furthermore, since the frame holding lid also has a built-in heater, it is possible to eliminate the temperature difference between the frame holding lid and the heater, thereby improving the adhesion of wire bonding.
第１図Ａは従来の還元方法を用いたボンデイン
グ装置の平面図、第１図Ｂはその断面図、第２図
Ａはこの発明の一実施例に係る還元方法を用いた
ボンデイング装置の平面図、第２図Ｂはその断面
図である。
１……リードフレーム、３……ヒータブロツ
ク、４……フレーム押え蓋、１１……ヒータ、１
２……フレーム押え下蓋。
FIG. 1A is a plan view of a bonding apparatus using a conventional reduction method, FIG. 1B is a sectional view thereof, and FIG. 2A is a plan view of a bonding apparatus using a reduction method according to an embodiment of the present invention. , FIG. 2B is a cross-sectional view thereof. 1...Lead frame, 3...Heater block, 4...Frame holding lid, 11...Heater, 1
2...Frame presser foot lower cover.
Claims (1)
イヤボンデイング工程に用いられる還元方法にお
いて、ボンデイング部のリードフレームの上方に
設けられるフレーム押え蓋にヒータを内蔵し、上
記フレーム押え蓋内に不活性ガス経路を設けてボ
ンデイング部に不活性ガスを供給するようにした
ことを特徴とする還元方法。1. In a reduction method used in the wire bonding process for connecting a semiconductor element and a lead frame, a heater is built into a frame holding lid provided above the lead frame in the bonding part, and an inert gas path is provided in the frame holding lid. A reduction method characterized in that an inert gas is supplied to a bonding section by providing an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039543A JPS59165429A (en) | 1983-03-10 | 1983-03-10 | Reduction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039543A JPS59165429A (en) | 1983-03-10 | 1983-03-10 | Reduction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59165429A JPS59165429A (en) | 1984-09-18 |
| JPH047102B2 true JPH047102B2 (en) | 1992-02-07 |
Family
ID=12555963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58039543A Granted JPS59165429A (en) | 1983-03-10 | 1983-03-10 | Reduction method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165429A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9415456B2 (en) | 2012-10-05 | 2016-08-16 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140848U (en) * | 1989-04-25 | 1990-11-26 |
-
1983
- 1983-03-10 JP JP58039543A patent/JPS59165429A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9415456B2 (en) | 2012-10-05 | 2016-08-16 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
| JPWO2014054305A1 (en) * | 2012-10-05 | 2016-08-25 | 株式会社新川 | Antioxidant gas blowing unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59165429A (en) | 1984-09-18 |
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