JPH0470776B2 - - Google Patents

Info

Publication number
JPH0470776B2
JPH0470776B2 JP63103957A JP10395788A JPH0470776B2 JP H0470776 B2 JPH0470776 B2 JP H0470776B2 JP 63103957 A JP63103957 A JP 63103957A JP 10395788 A JP10395788 A JP 10395788A JP H0470776 B2 JPH0470776 B2 JP H0470776B2
Authority
JP
Japan
Prior art keywords
beryllium
sintered body
aluminum nitride
semiconductor device
room temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63103957A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63313842A (ja
Inventor
Yukio Takeda
Satoru Ogiwara
Mitsuru Ura
Kosuke Nakamura
Tadamichi Asai
Tokio Oogoshi
Yasuo Matsushita
Kunihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63103957A priority Critical patent/JPS63313842A/ja
Publication of JPS63313842A publication Critical patent/JPS63313842A/ja
Publication of JPH0470776B2 publication Critical patent/JPH0470776B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/381—
    • H10W72/884—

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
JP63103957A 1988-04-28 1988-04-28 半導体装置搭載用基板及び半導体装置 Granted JPS63313842A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63103957A JPS63313842A (ja) 1988-04-28 1988-04-28 半導体装置搭載用基板及び半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63103957A JPS63313842A (ja) 1988-04-28 1988-04-28 半導体装置搭載用基板及び半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56066376A Division JPS57181356A (en) 1981-04-30 1981-04-30 Sintered aluminum nitride body with high heat conductivity

Publications (2)

Publication Number Publication Date
JPS63313842A JPS63313842A (ja) 1988-12-21
JPH0470776B2 true JPH0470776B2 (enExample) 1992-11-11

Family

ID=14367879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63103957A Granted JPS63313842A (ja) 1988-04-28 1988-04-28 半導体装置搭載用基板及び半導体装置

Country Status (1)

Country Link
JP (1) JPS63313842A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811390B2 (ja) * 1977-02-18 1983-03-02 株式会社東芝 熱伝導性基板の製造方法

Also Published As

Publication number Publication date
JPS63313842A (ja) 1988-12-21

Similar Documents

Publication Publication Date Title
US4585706A (en) Sintered aluminum nitride semi-conductor device
US4571610A (en) Semiconductor device having electrically insulating substrate of SiC
US4672046A (en) Sintered aluminum nitride body
JPH054950B2 (enExample)
JPS5832073A (ja) 焼結体
JPS6337065B2 (enExample)
JPH1067560A (ja) 高熱伝導率セラミックスおよびその製造方法
JPS5831755B2 (ja) 電気絶縁用基体
JPS6331434B2 (enExample)
JPH0470776B2 (enExample)
JPS5969473A (ja) 電気絶縁性焼結材用炭化けい素粉末組成物
JPS61146764A (ja) 窒化アルミニウム焼結体およびその製造方法
JPS5815953B2 (ja) 電気的装置用基板
JPH0247856B2 (enExample)
JPS6236988B2 (enExample)
JPS61261270A (ja) 窒化アルミニウム焼結体の製造方法
JPS6330372A (ja) 窒化アルミニウム焼結体の製法
JP2851712B2 (ja) 窒化アルミニウム質回路基板
JPH0522670B2 (enExample)
JPS61201669A (ja) 窒化アルミニウム焼結体及びその製造方法
JPH01188472A (ja) 窒化アルミニウム焼結体の製造方法
JPS61232274A (ja) 窒化アルミニウム焼結体の製造方法
JPH0660060B2 (ja) 窒化アルミニウム焼結体の製造方法
JPS631268B2 (enExample)
JPS62235262A (ja) 窒化アルミニウム焼結体の製造方法