JPH0470773B2 - - Google Patents
Info
- Publication number
- JPH0470773B2 JPH0470773B2 JP3659083A JP3659083A JPH0470773B2 JP H0470773 B2 JPH0470773 B2 JP H0470773B2 JP 3659083 A JP3659083 A JP 3659083A JP 3659083 A JP3659083 A JP 3659083A JP H0470773 B2 JPH0470773 B2 JP H0470773B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- amorphous semiconductor
- electrode
- source
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 239000007772 electrode material Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 description 24
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 208000011726 slow pulse Diseases 0.000 description 1
Classifications
-
- H01L29/78—
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3659083A JPS59163868A (ja) | 1983-03-08 | 1983-03-08 | 自己整合型薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3659083A JPS59163868A (ja) | 1983-03-08 | 1983-03-08 | 自己整合型薄膜トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59163868A JPS59163868A (ja) | 1984-09-14 |
| JPH0470773B2 true JPH0470773B2 (de) | 1992-11-11 |
Family
ID=12473988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3659083A Granted JPS59163868A (ja) | 1983-03-08 | 1983-03-08 | 自己整合型薄膜トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59163868A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439065A (en) * | 1987-08-04 | 1989-02-09 | Nec Corp | Thin film field-effect transistor |
| JPH01155663A (ja) * | 1987-12-14 | 1989-06-19 | Hitachi Ltd | 非晶質シリコン薄膜トランジスタ |
-
1983
- 1983-03-08 JP JP3659083A patent/JPS59163868A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59163868A (ja) | 1984-09-14 |
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