JPH0470626B2 - - Google Patents
Info
- Publication number
- JPH0470626B2 JPH0470626B2 JP58153818A JP15381883A JPH0470626B2 JP H0470626 B2 JPH0470626 B2 JP H0470626B2 JP 58153818 A JP58153818 A JP 58153818A JP 15381883 A JP15381883 A JP 15381883A JP H0470626 B2 JPH0470626 B2 JP H0470626B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- pattern
- film
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15381883A JPS6045242A (ja) | 1983-08-23 | 1983-08-23 | パターン形成方法 |
| US06/594,481 US4609615A (en) | 1983-03-31 | 1984-03-27 | Process for forming pattern with negative resist using quinone diazide compound |
| EP84302145A EP0124265B1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| DE8484302145T DE3466741D1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| CA000450963A CA1214679A (en) | 1983-03-31 | 1984-03-30 | Process for forming pattern with negative resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15381883A JPS6045242A (ja) | 1983-08-23 | 1983-08-23 | パターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6045242A JPS6045242A (ja) | 1985-03-11 |
| JPH0470626B2 true JPH0470626B2 (enrdf_load_stackoverflow) | 1992-11-11 |
Family
ID=15570756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15381883A Granted JPS6045242A (ja) | 1983-03-31 | 1983-08-23 | パターン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6045242A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625241A (ja) * | 1985-06-29 | 1987-01-12 | Oki Electric Ind Co Ltd | フオトマスクの製造方法 |
| JPH0246046Y2 (enrdf_load_stackoverflow) * | 1986-09-02 | 1990-12-05 | ||
| JPH02250006A (ja) * | 1989-03-24 | 1990-10-05 | Fujitsu Ltd | レジストの剥離方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029936B2 (ja) * | 1979-12-27 | 1985-07-13 | 富士通株式会社 | パタ−ン形成法 |
-
1983
- 1983-08-23 JP JP15381883A patent/JPS6045242A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6045242A (ja) | 1985-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5277749A (en) | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps | |
| US4353778A (en) | Method of etching polyimide | |
| JPS61220328A (ja) | リフト・オフ・マスクの製造方法 | |
| US5503961A (en) | Process for forming multilayer lift-off structures | |
| JPH0470626B2 (enrdf_load_stackoverflow) | ||
| CN118588537A (zh) | 一种基于干膜图形化的剥离工艺 | |
| EP0030604A2 (en) | Photoresist image hardening process | |
| CN118625611A (zh) | 一种光刻剥离方法 | |
| JP2002529802A (ja) | 間接的なレジストのレーザパタニング | |
| CN114792651A (zh) | 一种改善溅射层lift-off工艺图形异常的方法 | |
| JPH0458170B2 (enrdf_load_stackoverflow) | ||
| JPS5880638A (ja) | ポジ型フオトレジスト用剥離液 | |
| JPH07168368A (ja) | レジストパターンおよび薄膜金属パターンの形成方法 | |
| JPH041492B2 (enrdf_load_stackoverflow) | ||
| JPS60182134A (ja) | パタ−ン形成方法 | |
| JP2003158062A (ja) | レジストパターンの形成方法、配線形成方法及び電子部品 | |
| JPS60130829A (ja) | レジストパタ−ンの形成方法 | |
| JPS5857908B2 (ja) | 薄膜構造体の形成方法 | |
| JPS6045244A (ja) | レジストパタ−ンの形成方法 | |
| JP3147835B2 (ja) | 半導体装置の製造方法 | |
| JPS58145126A (ja) | 半導体装置の製造方法 | |
| JPS62179122A (ja) | 絶縁膜形成法 | |
| JP2001168096A (ja) | 配線パターン形成方法 | |
| JPS589140A (ja) | フオトレジストの付着性を改善する方法 | |
| JPS62279630A (ja) | レジストの塗布方法 |