JPH0469436B2 - - Google Patents

Info

Publication number
JPH0469436B2
JPH0469436B2 JP58216186A JP21618683A JPH0469436B2 JP H0469436 B2 JPH0469436 B2 JP H0469436B2 JP 58216186 A JP58216186 A JP 58216186A JP 21618683 A JP21618683 A JP 21618683A JP H0469436 B2 JPH0469436 B2 JP H0469436B2
Authority
JP
Japan
Prior art keywords
receiving device
light receiving
electrode
oxide
photoconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58216186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59112663A (ja
Inventor
Eiichi Maruyama
Yoshinori Imamura
Saburo Adaka
Kyohisa Inao
Yukio Takasaki
Toshihisa Tsukada
Tadaaki Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58216186A priority Critical patent/JPS59112663A/ja
Publication of JPS59112663A publication Critical patent/JPS59112663A/ja
Publication of JPH0469436B2 publication Critical patent/JPH0469436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58216186A 1983-11-18 1983-11-18 受光装置 Granted JPS59112663A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58216186A JPS59112663A (ja) 1983-11-18 1983-11-18 受光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58216186A JPS59112663A (ja) 1983-11-18 1983-11-18 受光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5893478A Division JPS54150995A (en) 1978-05-19 1978-05-19 Photo detector

Publications (2)

Publication Number Publication Date
JPS59112663A JPS59112663A (ja) 1984-06-29
JPH0469436B2 true JPH0469436B2 (enrdf_load_stackoverflow) 1992-11-06

Family

ID=16684633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58216186A Granted JPS59112663A (ja) 1983-11-18 1983-11-18 受光装置

Country Status (1)

Country Link
JP (1) JPS59112663A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658951B2 (ja) * 1985-07-17 1994-08-03 オリンパス光学工業株式会社 積層型固体撮像装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010083A (enrdf_load_stackoverflow) * 1973-05-23 1975-02-01
JPS521575B2 (enrdf_load_stackoverflow) * 1973-07-16 1977-01-17
JPS52144992A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Light receiving element
JPS535523A (en) * 1976-07-05 1978-01-19 Hitachi Ltd Pickup tube target

Also Published As

Publication number Publication date
JPS59112663A (ja) 1984-06-29

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