JPH0467773B2 - - Google Patents
Info
- Publication number
- JPH0467773B2 JPH0467773B2 JP60140244A JP14024485A JPH0467773B2 JP H0467773 B2 JPH0467773 B2 JP H0467773B2 JP 60140244 A JP60140244 A JP 60140244A JP 14024485 A JP14024485 A JP 14024485A JP H0467773 B2 JPH0467773 B2 JP H0467773B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- wavelength
- atm
- pressure
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60140244A JPS622541A (ja) | 1985-06-28 | 1985-06-28 | フオトリソグラフイ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60140244A JPS622541A (ja) | 1985-06-28 | 1985-06-28 | フオトリソグラフイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS622541A JPS622541A (ja) | 1987-01-08 |
JPH0467773B2 true JPH0467773B2 (enrdf_load_stackoverflow) | 1992-10-29 |
Family
ID=15264262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60140244A Granted JPS622541A (ja) | 1985-06-28 | 1985-06-28 | フオトリソグラフイ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS622541A (enrdf_load_stackoverflow) |
-
1985
- 1985-06-28 JP JP60140244A patent/JPS622541A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS622541A (ja) | 1987-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7026629B2 (en) | Lithographic apparatus and device manufacturing method | |
JPH0317213B2 (enrdf_load_stackoverflow) | ||
TWI325519B (en) | Lithographic apparatus and device manufacturing method | |
JP2001056544A (ja) | ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法 | |
US5147742A (en) | Photomask and fabrication of the same | |
JPH0467773B2 (enrdf_load_stackoverflow) | ||
US20110020752A1 (en) | Extreme ultraviolet radiation source and method for producing extreme ultraviolet radiation | |
JPS622443A (ja) | フオトリソグラフイ | |
EP0209152B1 (en) | Pre-exposure method for increased sensitivity in high contrast resist development | |
JPS62211646A (ja) | レジスト処理方法 | |
JPS61154128A (ja) | 露光装置 | |
JP3115822B2 (ja) | 紫外線照射装置およびその照射方法 | |
JPS6055624A (ja) | X線露光装置 | |
JPH01106049A (ja) | パターン形成方法 | |
JP2975159B2 (ja) | フォトリソグラフィー | |
JP4176162B2 (ja) | 化学増幅系フォトレジストの光反応解析方法および装置 | |
US20030071983A1 (en) | Method for improving resolution limits of a stepper | |
JPS63266821A (ja) | 紫外線露光装置 | |
JPH05100435A (ja) | 薄膜除去方法 | |
JPH044554A (ja) | ショートアーク型水銀蒸気放電灯 | |
JPH059933B2 (enrdf_load_stackoverflow) | ||
JP6590252B2 (ja) | 露光装置 | |
JPH087835A (ja) | 半導体露光用放電ランプ | |
JPS5680043A (en) | Far ultraviolet exposing method | |
JPS61208831A (ja) | パタ−ン転写装置 |