JPH0466393B2 - - Google Patents
Info
- Publication number
- JPH0466393B2 JPH0466393B2 JP61290421A JP29042186A JPH0466393B2 JP H0466393 B2 JPH0466393 B2 JP H0466393B2 JP 61290421 A JP61290421 A JP 61290421A JP 29042186 A JP29042186 A JP 29042186A JP H0466393 B2 JPH0466393 B2 JP H0466393B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- light
- junction
- solar cell
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000005215 recombination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290421A JPS63143876A (ja) | 1986-12-08 | 1986-12-08 | 太陽電池の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290421A JPS63143876A (ja) | 1986-12-08 | 1986-12-08 | 太陽電池の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63143876A JPS63143876A (ja) | 1988-06-16 |
| JPH0466393B2 true JPH0466393B2 (zh) | 1992-10-23 |
Family
ID=17755811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61290421A Granted JPS63143876A (ja) | 1986-12-08 | 1986-12-08 | 太陽電池の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63143876A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100543535B1 (ko) * | 2003-05-07 | 2006-01-20 | 준 신 이 | 누설전류 저감 기법을 이용한 다결정 실리콘 태양전지의 제조방법 |
| DE102005061820B4 (de) * | 2005-12-23 | 2014-09-04 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer Solarzelle |
| CN102099870A (zh) | 2008-06-11 | 2011-06-15 | 因特瓦克公司 | 用于在太阳能电池制作中使用的专用注入系统和方法 |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| WO2013070978A2 (en) | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Substrate processing system and method |
| MY178951A (en) | 2012-12-19 | 2020-10-23 | Intevac Inc | Grid for plasma ion implant |
-
1986
- 1986-12-08 JP JP61290421A patent/JPS63143876A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63143876A (ja) | 1988-06-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |