JPH046097B2 - - Google Patents

Info

Publication number
JPH046097B2
JPH046097B2 JP56062272A JP6227281A JPH046097B2 JP H046097 B2 JPH046097 B2 JP H046097B2 JP 56062272 A JP56062272 A JP 56062272A JP 6227281 A JP6227281 A JP 6227281A JP H046097 B2 JPH046097 B2 JP H046097B2
Authority
JP
Japan
Prior art keywords
carrier
case
integrated circuit
microwave integrated
foil plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56062272A
Other languages
Japanese (ja)
Other versions
JPS57177544A (en
Inventor
Tadaaki Kurosaki
Yoichi Kawakami
Tadaoki Kamiu
Seizo Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56062272A priority Critical patent/JPS57177544A/en
Publication of JPS57177544A publication Critical patent/JPS57177544A/en
Publication of JPH046097B2 publication Critical patent/JPH046097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Waveguides (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 この発明は、マイクロ波集積回路装置に関し、
特にその特性改善に係るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave integrated circuit device,
In particular, it concerns the improvement of its characteristics.

従来この種のマイクロ波集積回路として第１図
に示すものがあつた。第１図において、イは平面
図、ロは側面図である。 A conventional microwave integrated circuit of this type is shown in FIG. In FIG. 1, A is a plan view and B is a side view.

図中、１はマイクロ波集積回路用のセラミツク
基板で、その上には、高周波回路用のパターン６
ａ，６ｂが形成されている。このセラミツク基板
１はコバール製のキヤリア２にハンダ付けされて
おり、これらはアルミニユームで作られたケース
３にネジ止め部７ａにてネジ止めされている。４
は高周波用素子であるトランジスタで、ケース３
にネジ止め部７ｂにてネジ止めされている。トラ
ンジスタ４の端子５は、パターン６ａ，６ｂにハ
ンダ付されている。８は高周波入力部、９は出力
部で、これらは通常ここには図示していない高周
波コネクタに接続されている。 In the figure, 1 is a ceramic substrate for a microwave integrated circuit, and on it is a pattern 6 for a high frequency circuit.
a and 6b are formed. This ceramic substrate 1 is soldered to a carrier 2 made of Kovar, and these are screwed to a case 3 made of aluminum with screws 7a. 4
is a transistor, which is a high frequency element, and case 3
It is screwed to the screw portion 7b. The terminal 5 of the transistor 4 is soldered to the patterns 6a and 6b. 8 is a high frequency input section, and 9 is an output section, which are normally connected to a high frequency connector not shown here.

第１図において、高周波増巾器として動作をさ
せる場合、出力部８に加えられた高周波はパター
ン６ａを通りトランジスタ４に加えられ、増巾さ
れる。増巾された高周波は、パターン６ｂを通り
出力部９に出てくる。 In FIG. 1, when operating as a high frequency amplifier, the high frequency applied to the output section 8 passes through the pattern 6a and is applied to the transistor 4, where it is amplified. The amplified high frequency wave passes through the pattern 6b and comes out to the output section 9.

従来のマイクロ波集積回路は、以上のように構
成されているので、動作中環境温度が変化した
り、トランジスタから発生する熱で、マイクロ波
集積回路全体の温度が変化したときに、セラミツ
ク基板１とコバール等のキヤリア２は膨脹係数が
同じであるが、アルミニウムのケース３とは膨脹
係数が異なるので、キヤリア２とケース３の間で
伸び縮みによる寸法変化が起りアース点が変化
し、特性が異常に変化するという欠点があつた。 Conventional microwave integrated circuits are configured as described above, so when the temperature of the entire microwave integrated circuit changes due to changes in the environmental temperature during operation or due to heat generated from transistors, the ceramic substrate 1 Carrier 2 and Kovar etc. have the same expansion coefficient, but the expansion coefficient is different from aluminum case 3, so a dimensional change due to expansion and contraction occurs between carrier 2 and case 3, and the ground point changes, causing the characteristics to change. The drawback was that it changed abnormally.

この発明は、上記のような従来の欠点を除去す
るためになされたもので、キヤリアの下にキヤリ
アより小さな銅箔等の箔板で構成された薄い膜を
敷き、キヤリアをネジ止め等により常に圧力を加
えることにより、キヤリアとケースの接触部（ア
ース）を変化させないようにし、特性の安定化を
はかつたマイクロ波集積回路を提供することを目
的としている。 This invention was made in order to eliminate the above-mentioned drawbacks of the conventional method.A thin film made of a foil plate such as copper foil smaller than the carrier is placed under the carrier, and the carrier is always fixed by screws etc. The purpose of this invention is to provide a microwave integrated circuit whose characteristics are stabilized by applying pressure so as not to change the contact area (earth) between the carrier and the case.

以下この発明の一実施例を図に基づいて詳細に
説明する。 An embodiment of the present invention will be described in detail below with reference to the drawings.

第２図において、イは平面図、ロは側面図で、
１〜９は従来の装置と同じである。２１は銅箔板
でキヤリア２とケース３の間に挿入している。こ
の銅箔板２１の形状は任意であるが、キヤリア２
をネジ止め部７ａにてネジ止めしたときに、過大
な力がセラミツク基板１に加えられないようにす
る必要がある。第２図の実施例ではセラミツク基
板１が正方形をしており、銅箔板２１も大きさの
異なる正方形としている。そして銅箔板２１はキ
ヤリア２に対して約45゜の角度ずらせて配置され
ている。キヤリア２はケース３にネジ止めされる
が、これによつて銅箔板２１は特にその角部２１
１〜２１４がキヤリア２とケース３とにより強く
押圧される。 In Figure 2, A is a plan view, B is a side view,
1 to 9 are the same as the conventional device. 21 is a copper foil plate inserted between the carrier 2 and the case 3. The shape of this copper foil plate 21 is arbitrary, but the shape of the carrier 2
It is necessary to prevent excessive force from being applied to the ceramic substrate 1 when the screws are screwed together using the screw fixing portions 7a. In the embodiment shown in FIG. 2, the ceramic substrate 1 has a square shape, and the copper foil plates 21 are also square shaped. The copper foil plate 21 is arranged at an angle of about 45° with respect to the carrier 2. The carrier 2 is screwed to the case 3, which allows the copper foil plate 21 to
1 to 214 are strongly pressed by the carrier 2 and the case 3.

マイクロ波集積回路としての作用、動作は、従
来技術のものと同じであるが、この発明によるマ
イクロ波集積回路は、温度試験をしたときにその
特徴を発揮する。 Although the functions and operations as a microwave integrated circuit are the same as those of the prior art, the microwave integrated circuit according to the present invention exhibits its characteristics when subjected to a temperature test.

つまり、第２図構成のマイクロ波集積回路は、
温度試験時に、環境温度が高温（＋60〜＋70℃）
になつても低温（−30〜−40℃）になつても、使
用材料の膨脹係数の差による寸法変化は銅箔板２
１が吸収してしまうため、特性の異常な変動が発
生しない。 In other words, the microwave integrated circuit with the configuration shown in Figure 2 is
During the temperature test, the environmental temperature was high (+60 to +70℃)
Even at low temperatures (-30 to -40℃), dimensional changes due to differences in the expansion coefficients of the materials used will not occur.
1 is absorbed, so abnormal fluctuations in characteristics do not occur.

上記実施例では、銅箔板２１を用いた場合につ
いて説明したが、この箔板の材質は銅箔に限ら
ず、アルミニユーム箔及びその他の箔も使用でき
る。また、上記実施例では正方形のセラミツク基
板１に正方形の銅箔板２１を敷いた例を示した
が、セラミツク基板１が種々な形状を取るごと
く、箔板２１も種々変化し得る。 In the above embodiment, the case where the copper foil plate 21 is used has been described, but the material of this foil plate is not limited to copper foil, and aluminum foil and other foils can also be used. Further, in the above embodiment, an example was shown in which a square copper foil plate 21 was laid on a square ceramic substrate 1, but just as the ceramic substrate 1 takes on various shapes, the foil plate 21 can also be varied in various ways.

尚、この箔板２１は、セラミツク基板１より小
さくなければならないことはもちろんである。 It goes without saying that this foil plate 21 must be smaller than the ceramic substrate 1.

以上のように、この発明によれば、金属箔板を
キヤリアとケースの間に敷いており、金属箔板の
輪郭部がキヤリアとケースに他の部分より強く接
触しており、キヤリアとケースの接触部位はマイ
クロ波集積回路装置が温度変化により、キヤリア
とケースの線膨張温度係数の差による歪を生じて
もその位置は最初の金属箔板の輪郭部の接触部位
から変化しないのでマイクロ波集積回路装置とし
て安定な特性が得られる。 As described above, according to the present invention, a metal foil plate is laid between the carrier and the case, and the contour part of the metal foil plate is in stronger contact with the carrier and the case than other parts, so that the carrier and the case are in contact with each other. Even if the microwave integrated circuit device is distorted due to the difference in linear expansion temperature coefficient between the carrier and the case due to temperature changes, the contact point does not change from the initial contact point on the contour of the metal foil plate, so microwave integration is possible. Stable characteristics can be obtained as a circuit device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のマイクロ波集積回路の構成を示
し、イは平面図、ロは側面図である。第２図はこ
の発明によるマイクロ波集積回路の一実施例の構
成を示し、イは平面図、ロは側面図である。 １…セラミツク基板、２…キヤリア、３…ケー
ス、６…パターン、２１…銅箔板。なお、図中、
同一符号は同一、又は相当部分を示す。 FIG. 1 shows the configuration of a conventional microwave integrated circuit, in which A is a plan view and B is a side view. FIG. 2 shows the configuration of an embodiment of the microwave integrated circuit according to the present invention, in which A is a plan view and B is a side view. 1... Ceramic board, 2... Carrier, 3... Case, 6... Pattern, 21... Copper foil plate. In addition, in the figure,
The same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] １ マイクロ波回路を構成する基板をキヤリアを
介して金属ケースに固着しアースするようにした
装置に於て、上記キヤリアと金属ケースとの間に
キヤリア固着部周辺を切り欠いた輪郭を持つ金属
箔板を挿入すると共にこの金属箔板に常に押圧力
を加えるようにした事を特徴とするマイクロ波集
積回路装置。1 In a device in which a substrate constituting a microwave circuit is fixed to a metal case via a carrier and grounded, a metal foil having an outline with a cutout around the carrier fixed part is placed between the carrier and the metal case. A microwave integrated circuit device characterized in that a pressing force is always applied to the metal foil plate while inserting the plate.
JP56062272A 1981-04-24 1981-04-24 Microwave ic device Granted JPS57177544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062272A JPS57177544A (en) 1981-04-24 1981-04-24 Microwave ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062272A JPS57177544A (en) 1981-04-24 1981-04-24 Microwave ic device

Publications (2)

Publication Number Publication Date
JPS57177544A JPS57177544A (en) 1982-11-01
JPH046097B2 true JPH046097B2 (en) 1992-02-04

Family

ID=13195339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062272A Granted JPS57177544A (en) 1981-04-24 1981-04-24 Microwave ic device

Country Status (1)

Country Link
JP (1) JPS57177544A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4278617B2 (en) 2002-11-12 2009-06-17 富士通株式会社 Mounting structure and electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345570U (en) * 1976-09-22 1978-04-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345570U (en) * 1976-09-22 1978-04-18

Also Published As

Publication number Publication date
JPS57177544A (en) 1982-11-01

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