JPH0459716B2 - - Google Patents

Info

Publication number
JPH0459716B2
JPH0459716B2 JP63053658A JP5365888A JPH0459716B2 JP H0459716 B2 JPH0459716 B2 JP H0459716B2 JP 63053658 A JP63053658 A JP 63053658A JP 5365888 A JP5365888 A JP 5365888A JP H0459716 B2 JPH0459716 B2 JP H0459716B2
Authority
JP
Japan
Prior art keywords
memory cell
word line
normally
mesfet
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63053658A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01229496A (ja
Inventor
Satoshi Takano
Hiroyuki Makino
Shuichi Matsue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP63053658A priority Critical patent/JPH01229496A/ja
Publication of JPH01229496A publication Critical patent/JPH01229496A/ja
Publication of JPH0459716B2 publication Critical patent/JPH0459716B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP63053658A 1988-03-09 1988-03-09 ガリウム砒素集積回路 Granted JPH01229496A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63053658A JPH01229496A (ja) 1988-03-09 1988-03-09 ガリウム砒素集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63053658A JPH01229496A (ja) 1988-03-09 1988-03-09 ガリウム砒素集積回路

Publications (2)

Publication Number Publication Date
JPH01229496A JPH01229496A (ja) 1989-09-13
JPH0459716B2 true JPH0459716B2 (OSRAM) 1992-09-24

Family

ID=12948958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63053658A Granted JPH01229496A (ja) 1988-03-09 1988-03-09 ガリウム砒素集積回路

Country Status (1)

Country Link
JP (1) JPH01229496A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512705B1 (en) 2001-11-21 2003-01-28 Micron Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices

Also Published As

Publication number Publication date
JPH01229496A (ja) 1989-09-13

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term