JPH0458685B2 - - Google Patents

Info

Publication number
JPH0458685B2
JPH0458685B2 JP6156084A JP6156084A JPH0458685B2 JP H0458685 B2 JPH0458685 B2 JP H0458685B2 JP 6156084 A JP6156084 A JP 6156084A JP 6156084 A JP6156084 A JP 6156084A JP H0458685 B2 JPH0458685 B2 JP H0458685B2
Authority
JP
Japan
Prior art keywords
electrode
sample
etching
columnar
columnar electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6156084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60206029A (ja
Inventor
Tsutomu Tsukaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP6156084A priority Critical patent/JPS60206029A/ja
Publication of JPS60206029A publication Critical patent/JPS60206029A/ja
Publication of JPH0458685B2 publication Critical patent/JPH0458685B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP6156084A 1984-03-29 1984-03-29 プラズマ表面処理装置 Granted JPS60206029A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6156084A JPS60206029A (ja) 1984-03-29 1984-03-29 プラズマ表面処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6156084A JPS60206029A (ja) 1984-03-29 1984-03-29 プラズマ表面処理装置

Publications (2)

Publication Number Publication Date
JPS60206029A JPS60206029A (ja) 1985-10-17
JPH0458685B2 true JPH0458685B2 (enrdf_load_stackoverflow) 1992-09-18

Family

ID=13174616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6156084A Granted JPS60206029A (ja) 1984-03-29 1984-03-29 プラズマ表面処理装置

Country Status (1)

Country Link
JP (1) JPS60206029A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4141021B2 (ja) * 1998-09-18 2008-08-27 東京エレクトロン株式会社 プラズマ成膜方法

Also Published As

Publication number Publication date
JPS60206029A (ja) 1985-10-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term