JPH0456799B2 - - Google Patents

Info

Publication number
JPH0456799B2
JPH0456799B2 JP11614885A JP11614885A JPH0456799B2 JP H0456799 B2 JPH0456799 B2 JP H0456799B2 JP 11614885 A JP11614885 A JP 11614885A JP 11614885 A JP11614885 A JP 11614885A JP H0456799 B2 JPH0456799 B2 JP H0456799B2
Authority
JP
Japan
Prior art keywords
susceptor
carbon plate
vapor phase
phase growth
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11614885A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61275193A (ja
Inventor
Taisan Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP11614885A priority Critical patent/JPS61275193A/ja
Publication of JPS61275193A publication Critical patent/JPS61275193A/ja
Publication of JPH0456799B2 publication Critical patent/JPH0456799B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP11614885A 1985-05-29 1985-05-29 気相成長装置用サセプタ Granted JPS61275193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11614885A JPS61275193A (ja) 1985-05-29 1985-05-29 気相成長装置用サセプタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11614885A JPS61275193A (ja) 1985-05-29 1985-05-29 気相成長装置用サセプタ

Publications (2)

Publication Number Publication Date
JPS61275193A JPS61275193A (ja) 1986-12-05
JPH0456799B2 true JPH0456799B2 (enrdf_load_stackoverflow) 1992-09-09

Family

ID=14679938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11614885A Granted JPS61275193A (ja) 1985-05-29 1985-05-29 気相成長装置用サセプタ

Country Status (1)

Country Link
JP (1) JPS61275193A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120814A (ja) * 1987-11-04 1989-05-12 Tokyo Electron Ltd 半導体ウエハ用載置台

Also Published As

Publication number Publication date
JPS61275193A (ja) 1986-12-05

Similar Documents

Publication Publication Date Title
KR100694351B1 (ko) 기판의 에피택셜 프로세싱 장치 및 방법
KR970077318A (ko) 오버헤드 솔레노이드 안테나를 가지는 유도 결합된 rf 플라즈마 반응기
WO1986000096A1 (en) Method and apparatus for reducing temperature variations across a semiconductor wafer during heating
JPH0789541B2 (ja) 半導体ウェーハ処理装置のサセプタの熱分布を向上するサセプタ用スポーク支持体
JP2002158178A (ja) 基板処理装置および半導体装置の製造方法
JPS6312128A (ja) バレル型気相成長装置
JPH0845863A (ja) 半導体基板の枚葉式熱処理装置
JP3068914B2 (ja) 気相成長装置
CN109841542B (zh) SiC外延生长装置
JPH0456799B2 (enrdf_load_stackoverflow)
JP3074312B2 (ja) 気相成長方法
JPH045000B2 (enrdf_load_stackoverflow)
JPS61219130A (ja) 気相成長装置
JPH0338029A (ja) 気相成長装置
JPS60263428A (ja) 気相成長装置用サセプタ
JPS60116778A (ja) 化学蒸着方法及び装置
CN216972740U (zh) 一种灯模组及衬底处理设备
JPH0736386B2 (ja) 気相成長装置
JPH04713A (ja) 基板の加熱装置
JP2644819B2 (ja) 加熱炉
JPH0719142Y2 (ja) 気相成長装置
JPS61223184A (ja) 気相成長装置
JPH03211822A (ja) 半導体製造装置
JPH029446B2 (enrdf_load_stackoverflow)
JPH0397222A (ja) 枚葉式cvd装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees