JPH0456450B2 - - Google Patents
Info
- Publication number
- JPH0456450B2 JPH0456450B2 JP58226656A JP22665683A JPH0456450B2 JP H0456450 B2 JPH0456450 B2 JP H0456450B2 JP 58226656 A JP58226656 A JP 58226656A JP 22665683 A JP22665683 A JP 22665683A JP H0456450 B2 JPH0456450 B2 JP H0456450B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- conductive
- mesh
- film
- conductive mesh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58226656A JPS60117716A (ja) | 1983-11-30 | 1983-11-30 | 成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58226656A JPS60117716A (ja) | 1983-11-30 | 1983-11-30 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60117716A JPS60117716A (ja) | 1985-06-25 |
JPH0456450B2 true JPH0456450B2 (enrdf_load_html_response) | 1992-09-08 |
Family
ID=16848595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58226656A Granted JPS60117716A (ja) | 1983-11-30 | 1983-11-30 | 成膜方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60117716A (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2524735Y2 (ja) * | 1991-04-05 | 1997-02-05 | 大和ハウス工業株式会社 | 鉄骨柱脚 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4033287A (en) * | 1976-01-22 | 1977-07-05 | Bell Telephone Laboratories, Incorporated | Radial flow reactor including glow discharge limiting shield |
JPS54134972A (en) * | 1978-04-12 | 1979-10-19 | Tokyo Denki Daigaku | Diode discharge tube having metal mesh anode |
JPS5953211B2 (ja) * | 1982-05-27 | 1984-12-24 | 工業技術院長 | 薄膜シリコン生成装置 |
-
1983
- 1983-11-30 JP JP58226656A patent/JPS60117716A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60117716A (ja) | 1985-06-25 |