JPH0454373B2 - - Google Patents

Info

Publication number
JPH0454373B2
JPH0454373B2 JP57068636A JP6863682A JPH0454373B2 JP H0454373 B2 JPH0454373 B2 JP H0454373B2 JP 57068636 A JP57068636 A JP 57068636A JP 6863682 A JP6863682 A JP 6863682A JP H0454373 B2 JPH0454373 B2 JP H0454373B2
Authority
JP
Japan
Prior art keywords
etching
frequency
ions
etched
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57068636A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58186937A (ja
Inventor
Shinichi Taji
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57068636A priority Critical patent/JPS58186937A/ja
Publication of JPS58186937A publication Critical patent/JPS58186937A/ja
Publication of JPH0454373B2 publication Critical patent/JPH0454373B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/242

Landscapes

  • Drying Of Semiconductors (AREA)
JP57068636A 1982-04-26 1982-04-26 ドライエツチング方法 Granted JPS58186937A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57068636A JPS58186937A (ja) 1982-04-26 1982-04-26 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57068636A JPS58186937A (ja) 1982-04-26 1982-04-26 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58186937A JPS58186937A (ja) 1983-11-01
JPH0454373B2 true JPH0454373B2 (enExample) 1992-08-31

Family

ID=13379415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57068636A Granted JPS58186937A (ja) 1982-04-26 1982-04-26 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58186937A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
JPS60102743A (ja) * 1983-11-09 1985-06-06 Nec Corp ドライエツチング方法
JPS60140726A (ja) * 1983-12-27 1985-07-25 Fujitsu Ltd プラズマ気相成長装置
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
FR2613168B1 (fr) * 1985-10-16 1991-08-30 France Etat Procede et dispositif de gravure par plasma d'un materiau
JP3377773B2 (ja) * 2000-03-24 2003-02-17 三菱重工業株式会社 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983764A (enExample) * 1972-12-15 1974-08-12
JPS52141443A (en) * 1976-05-21 1977-11-25 Nippon Electric Co Method of etching films

Also Published As

Publication number Publication date
JPS58186937A (ja) 1983-11-01

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