JPH0451809B2 - - Google Patents
Info
- Publication number
- JPH0451809B2 JPH0451809B2 JP56082138A JP8213881A JPH0451809B2 JP H0451809 B2 JPH0451809 B2 JP H0451809B2 JP 56082138 A JP56082138 A JP 56082138A JP 8213881 A JP8213881 A JP 8213881A JP H0451809 B2 JPH0451809 B2 JP H0451809B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display
- voltage
- electrode
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 18
- 239000011159 matrix material Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 9
- 210000002858 crystal cell Anatomy 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002601 lanthanoid compounds Chemical class 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000005529 poole-frenkel effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56082138A JPS57197592A (en) | 1981-05-29 | 1981-05-29 | Liquid crystal display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56082138A JPS57197592A (en) | 1981-05-29 | 1981-05-29 | Liquid crystal display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57197592A JPS57197592A (en) | 1982-12-03 |
| JPH0451809B2 true JPH0451809B2 (enrdf_load_stackoverflow) | 1992-08-20 |
Family
ID=13766053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56082138A Granted JPS57197592A (en) | 1981-05-29 | 1981-05-29 | Liquid crystal display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57197592A (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4662719A (en) * | 1984-09-10 | 1987-05-05 | International Business Machines Corporation | Liquid crystal display and method for production |
| JPS6190192A (ja) * | 1984-10-09 | 1986-05-08 | セイコーインスツルメンツ株式会社 | 液晶電気光学装置 |
| JPS6194086A (ja) * | 1984-10-16 | 1986-05-12 | セイコーインスツルメンツ株式会社 | 液晶表示装置 |
| JP2509169B2 (ja) * | 1984-11-06 | 1996-06-19 | シャープ株式会社 | セル内メタルマスク付基板 |
| JPS61151682A (ja) * | 1984-12-26 | 1986-07-10 | 日本電気株式会社 | 薄膜二端子素子型アクテイブマトリツクス液晶表示装置 |
| JPH0617956B2 (ja) * | 1985-01-29 | 1994-03-09 | セイコー電子工業株式会社 | 液晶表示装置の製造方法 |
| JPS61174510A (ja) * | 1985-01-29 | 1986-08-06 | Seiko Instr & Electronics Ltd | 液晶表示装置 |
| JPS61186929A (ja) * | 1985-02-15 | 1986-08-20 | Ricoh Co Ltd | 液晶表示装置 |
| JPH0617957B2 (ja) * | 1985-05-15 | 1994-03-09 | セイコー電子工業株式会社 | 液晶表示装置 |
| JPH0731329B2 (ja) * | 1985-07-05 | 1995-04-10 | セイコー電子工業株式会社 | 液晶表示用基板の製造方法 |
| JP2945947B2 (ja) * | 1990-11-16 | 1999-09-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
-
1981
- 1981-05-29 JP JP56082138A patent/JPS57197592A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57197592A (en) | 1982-12-03 |
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