JPH0448671A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0448671A JPH0448671A JP2156203A JP15620390A JPH0448671A JP H0448671 A JPH0448671 A JP H0448671A JP 2156203 A JP2156203 A JP 2156203A JP 15620390 A JP15620390 A JP 15620390A JP H0448671 A JPH0448671 A JP H0448671A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser chip
- transparent
- cap body
- transparent resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 abstract description 7
- 229910000975 Carbon steel Inorganic materials 0.000 abstract description 4
- 239000010962 carbon steel Substances 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000010304 firing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、レーザの発光素子として半導体レーザチップ
を使用した半導体レーザ装置のうち、前記半導体レーザ
チップの部分を、透明板付きキャップ体にて密封して成
るいわゆるカンシール型の半導体レーザ装置の改良に関
するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a semiconductor laser device using a semiconductor laser chip as a light emitting element of a laser, in which a portion of the semiconductor laser chip is covered with a cap body with a transparent plate. This invention relates to an improvement in a so-called can-seal type semiconductor laser device that is sealed.
この種のカンシール型の半導体レーザ装置において、そ
の半導体レーザチップの部分を、透明板付きキャップ体
によって密封するのは、前記半導体レーザチップが、大
気中の湿度や塵埃によって劣化することを防止すると共
に、前記半導体レーザチップを、外部からの接触及び衝
撃等に対して保護するためにある。In this type of can-seal type semiconductor laser device, the semiconductor laser chip is sealed with a cap body with a transparent plate to prevent the semiconductor laser chip from deteriorating due to atmospheric humidity and dust. , to protect the semiconductor laser chip from external contact and impact.
そこで、従来、この種のカンシール型の半導体レーザ装
置においては、良く知られているように、半導体レーザ
チップをダイボンディングしたステムと、この半導体レ
ーザチップに対するキャップ体とを、炭素鋼製にして、
このキャップ体における下端の全周を、前記ステムに対
して抵抗溶接にして固着する一方、前記キャップ体に対
してガラス製の透明板を、ガラス半田を使用して固着す
ることによって、キャップ体内における気密性を確保す
るようにしている。Conventionally, in this type of can-seal type semiconductor laser device, as is well known, the stem to which the semiconductor laser chip is die-bonded and the cap body for the semiconductor laser chip are made of carbon steel.
The entire circumference of the lower end of the cap body is fixed to the stem by resistance welding, and a transparent plate made of glass is fixed to the cap body using glass solder. We are trying to ensure airtightness.
そして、キャップ体に対してガラス製の透明板をガラス
半田にて固着するに際しては、例えば、実開昭６２−５
８０６６号公報に詳しく説明されているように、先づ、
ガラス粉末をリング状にプレス成形したのち仮焼成する
ことによってリング状のガラス半田を製作し、このリン
グ状ガラス半田とガラス製の透明体とをキャップ体に装
填し、この状態で全体を５００〜６００℃の高い温度で
焼成して前記ガラス半田を溶融することによって、前記
透明板をガラス半田にてキャップ体に固着するようにし
ている。When fixing a glass transparent plate to the cap body with glass solder, for example,
As explained in detail in Publication No. 8066, first,
A ring-shaped glass solder is produced by press-molding glass powder into a ring shape and pre-sintering it, and this ring-shaped glass solder and a glass transparent body are loaded into a cap body, and in this state, the whole is heated to a By firing at a high temperature of 600° C. and melting the glass solder, the transparent plate is fixed to the cap body with the glass solder.
しかし、このように、透明板をキャップ体に対してガラ
ス半田にて固着する方法は、その固着が強固にできると
共に、キャップ内を高い気密性に維持できる利点を有す
る反面、リング状のガラス半田を製作する工程、及び、
高温で焼成する工程を必要とするばかりか、この高温で
の焼成によって変色したキャップ体に対して、酸洗いし
たのちニッケルメッキを施すと言う後処理工程を必要と
するのであり、しかも、前記ガラス製の透明板には、前
記後処理工程の酸洗い及びメツキに際して当該透明板の
表面を損傷することがないようにするための保護膜を予
め形成しておく必要があるから、キャップ体に対して透
明板を、完全シール状態で固着することに多大のコスト
が嵩み、半導体レーザ装置の価格が大幅にアップすると
言う問題があった。However, this method of fixing the transparent plate to the cap body with glass solder has the advantage of making the fixation strong and maintaining a high degree of airtightness inside the cap. The process of manufacturing, and
Not only does it require a process of firing at a high temperature, but it also requires a post-treatment process of pickling and nickel plating the cap body, which has become discolored due to firing at this high temperature. It is necessary to form a protective film in advance on the transparent plate made of aluminum to prevent damage to the surface of the transparent plate during pickling and plating in the post-processing process. There is a problem in that it costs a lot of money to fix the transparent plate in a completely sealed state, and the price of the semiconductor laser device increases significantly.
本発明は、この問題、つまり、半導体レーザチップに対
する密封性の確保のために、製造コストが大幅にアップ
すると言う問題を、解消することを技術的課題とする。The technical object of the present invention is to solve this problem, that is, the problem that the manufacturing cost increases significantly in order to ensure the sealing performance for the semiconductor laser chip.
この技術的課題を達成するため本発明は、半導体レーザ
チップを固着したステムと、該ステムに前記半導体レー
ザチップを覆うように固着したキャップ体と、該キャッ
プ体に設けた透明板とから成る半導体レーザ装置におい
て、前記半導体レーザチップと、前記透明板との間に、
透明樹脂を、当該透明樹脂にて半導体レーザチップの全
体を覆うように充填する構成にした。In order to achieve this technical problem, the present invention provides a semiconductor comprising a stem to which a semiconductor laser chip is fixed, a cap body fixed to the stem so as to cover the semiconductor laser chip, and a transparent plate provided on the cap body. In the laser device, between the semiconductor laser chip and the transparent plate,
The structure was such that the transparent resin was filled so as to cover the entire semiconductor laser chip.
このように構成すると、半導体レーザチップにおける先
端における前方襞間面から発射するレーザ光は、当該半
導体レーザチップと透明板との間に充填した透明樹脂内
を通って、透明板の表面から大気中に出射される。With this configuration, the laser light emitted from the front interfold surface at the tip of the semiconductor laser chip passes through the transparent resin filled between the semiconductor laser chip and the transparent plate, and enters the atmosphere from the surface of the transparent plate. It is emitted to
一方、前記半導体レーザチップの全体は、前記透明樹脂
によって覆われていることにより、当該半導体体レーザ
チップに対する湿度及び塵埃の接触を前記透明樹脂によ
って阻止することができるから、透明板を備えたキャッ
プ体としては、その内部における密封性を従来のように
高いものにする必要がなく、換言すると、キャップ体内
における気密性を低いものにすることができるのである
。On the other hand, since the entire semiconductor laser chip is covered with the transparent resin, the transparent resin can prevent humidity and dust from coming into contact with the semiconductor laser chip. As for the body, it is not necessary to have a high sealing performance inside the cap body as in the past, and in other words, the airtightness inside the cap body can be made low.
このように本発明によると、キャップ体に透明板を設け
るに際して、当該透明板をキャップ体に対して高い気密
性を保つようにして固着する必要がなく、キャップ体に
対して透明板を接着剤にて接着するだけで良いから、場
合によっては、透明板をキャップ体に対して固着するこ
とを省略することができ、従って、前記従来のように、
リング状のガラス半田を製作する工程、高温で焼成する
工程、及び高温での焼成の後処理としての酸洗い・メツ
キ工程を必要しないばかりか、透明板に予め保護膜を形
成することをも必要としないから、製造コストを大幅に
低減できて、耐久性の高い半導体レーザ装置を、安価に
提供できる効果を有する。According to the present invention, when providing a transparent plate on a cap body, it is not necessary to fix the transparent plate to the cap body in a manner that maintains high airtightness, and it is not necessary to attach the transparent plate to the cap body using an adhesive. Since it is only necessary to adhere the transparent plate to the cap body, in some cases, it is possible to omit fixing the transparent plate to the cap body.
Not only does it not require the process of manufacturing ring-shaped glass solder, the process of firing at high temperatures, and the pickling and plating processes as post-processing after firing at high temperatures, it also requires the formation of a protective film on the transparent plate in advance. This has the effect that manufacturing costs can be significantly reduced and a highly durable semiconductor laser device can be provided at low cost.
しかも、透明体と半導体レーザチップとの間に透明樹脂
を充填したことにより、半導体レーザチップからのレー
ザ光は、前記透明樹脂内を通って透明板の表面から大気
中に出射することになり、前記透明板の表面か、レーザ
光の出射面になるから、前記半導体レーサチップにおけ
る前方襞間面を高い精度の平坦面にしなくても、レーザ
光のビーム特性を向上することかできる効果をも有する
。Moreover, by filling the space between the transparent body and the semiconductor laser chip with a transparent resin, the laser light from the semiconductor laser chip passes through the transparent resin and is emitted from the surface of the transparent plate into the atmosphere. Since the surface of the transparent plate becomes the exit surface of the laser beam, it also has the effect of improving the beam characteristics of the laser beam without having to make the front interfold surface of the semiconductor laser chip a highly accurate flat surface. .
以下、本発明の実施例を図面（第１図〜第３図）につい
て説明するに、図において符号１は、炭素鋼等の金属に
て円盤型に形成したステム２と、ガラス等の透明板３を
備えた炭素鋼等の金属製のキャップ体４とによって構成
された半導体レーザ装置を示す。Hereinafter, embodiments of the present invention will be described with reference to the drawings (Figs. 1 to 3). In the drawings, reference numeral 1 indicates a stem 2 formed into a disk shape of metal such as carbon steel, and a transparent plate such as glass. 3 and a cap body 4 made of metal such as carbon steel.
前記ステム２の上面に一体的に造形したブロック体５の
側面には、モニター用ホオトダイオード７を備えたサブ
マウント６が固着され、このサブマウント６の表面に、
半導体レーサチツプ８が、当該半導体レーザチップ８に
おける前方臂開面８ａが前記透明板３の方向に向かい、
後方剪開面８ｂが前記ホオトダイオード７の方向に向か
うようにダイボンディングされている。また、前記半導
体レーザチップ８における後方努開面８ｂと前記ホオト
ダイオード７との間には、後方臂開面８ｂから発射され
るレーザ光をホオトダイオード７に導くための透明性又
は半透明性の導波体９が塗着形成されている。A submount 6 equipped with a monitor photodiode 7 is fixed to the side surface of the block body 5 integrally formed on the upper surface of the stem 2, and on the surface of this submount 6,
The semiconductor laser chip 8 has a front arm opening 8a facing the transparent plate 3,
Die bonding is performed so that the rear sheared surface 8b faces toward the photodiode 7. Further, a transparent or semi-transparent layer is provided between the rear opening surface 8b of the semiconductor laser chip 8 and the photodiode 7 for guiding the laser light emitted from the rear opening surface 8b to the photodiode 7. A magnetic waveguide 9 is formed by coating.
符号１０ａ、１０ｂ、１０ｃは、前記半導体レーザチッ
プ８及び前記ホオトダイオード７に対するリード端子を
示し、この各リード端子１０ａ。Reference numerals 10a, 10b, and 10c indicate lead terminals for the semiconductor laser chip 8 and the photodiode 7, and each lead terminal 10a.
１０ｂ、１０ｃのうち一本のリード端子１０ａは、前記
ステム２の下面に溶接にて固着され、他の二本のリード
端子１０ｂ、１０ｃは、ステム２に穿設した孔２ａ、２
ｂ内に、ガラス等の絶縁シール材１１にて絶縁シール状
態で固着されている。One of the lead terminals 10b and 10c is fixed to the lower surface of the stem 2 by welding, and the other two lead terminals 10b and 10c are connected to holes 2a and 2 formed in the stem 2.
b, and is fixed in an insulating seal state with an insulating sealing material 11 such as glass.
また、前記キャップ体４は、前記半導体レーザチップ８
付きブロック体５に被嵌したのち、その下端における外
向きフランジ部４ａを前記ステム２に対して溶接するこ
とによって固着されている。Further, the cap body 4 includes the semiconductor laser chip 8.
After being fitted into the mounting block body 5, the outward flange portion 4a at the lower end thereof is fixed to the stem 2 by welding.
なお、このキャップ体４のステム２に対する固着は、ス
テム２に各リード端子１０ａ、１０ｂ、１０ｃを固着し
、ブロック体５にサブマウント６及び半導体レーザチッ
プ８をダイボンディングし、且つ、半導体レーサチップ
８とサブマウント６との間、及びサブマウント６と両リ
ード端子１０ｂ。The cap body 4 is fixed to the stem 2 by fixing each lead terminal 10a, 10b, 10c to the stem 2, by die-bonding the submount 6 and the semiconductor laser chip 8 to the block body 5, and by die-bonding the semiconductor laser chip 8 to the block body 5. and the submount 6, and between the submount 6 and both lead terminals 10b.
１０ｃとの間にワイヤーボンディングを施した後におい
て行なわれる。This is carried out after wire bonding is performed between the terminal and the terminal 10c.
そして、前記透明板３と前記半導体レーザチップ８との
間に、シリコン樹脂等のように比較的軟質の透明樹脂１
２を、当該透明樹脂１２にて前記半導体レーザチップ８
及び前記導波体９の全体を覆うように充填する。A relatively soft transparent resin 1 such as silicone resin is placed between the transparent plate 3 and the semiconductor laser chip 8.
2 to the semiconductor laser chip 8 using the transparent resin 12.
Then, the waveguide 9 is filled so as to cover the entirety thereof.
このように構成すると、半導体レーザチップ８の先端に
おける前方襞間面８ａから発射するレーザ光は、当該半
導体レーザチップ８と透明板３との間に充填した透明樹
脂１２内を通って、透明板３の表面から大気中に出射さ
れる一方、前記半導体レーサチップ８の全体は、前記透
明樹脂１２によって覆われていることにより、当該半導
体レーサチップ８に対する湿度及び塵埃の接触を、前記
透明樹脂１２によって阻止することができる。With this configuration, the laser light emitted from the front interfold surface 8a at the tip of the semiconductor laser chip 8 passes through the transparent resin 12 filled between the semiconductor laser chip 8 and the transparent plate 3, and passes through the transparent resin 12 filled between the semiconductor laser chip 8 and the transparent plate 3. The semiconductor laser chip 8 is entirely covered with the transparent resin 12 to prevent humidity and dust from coming into contact with the semiconductor laser chip 8. can do.
なお、前記透明樹脂１２の充填に際しては、キャップ体
４をステム２に対して固着する前の状態において、第４
図に示すように、ステム２における半導体レーサチップ
８の部分に、透明樹脂液１２ａを塗着する一方、キャッ
プ体４内に適宜量の透明樹脂液１．２ ｂを注入してお
き、このキャップ体４内に、ステム２における半導体レ
ーザチ、ツブ８の部分を挿入したのち、キャップ体４を
ステム２に対して固着することにより、前記量透明樹脂
液］、２ａ、、１．２ｂは一体化して透明樹脂１２を形
成することになるから、透明樹脂１２の充填を、気泡の
発生か少ない状態で行うことができる。In addition, when filling the transparent resin 12, in a state before the cap body 4 is fixed to the stem 2,
As shown in the figure, a transparent resin liquid 12a is applied to the portion of the semiconductor laser chip 8 in the stem 2, and an appropriate amount of transparent resin liquid 1.2b is injected into the cap body 4. After inserting the semiconductor laser chip and the knob 8 portion of the stem 2 into the stem 2, the cap body 4 is fixed to the stem 2, so that the amount of transparent resin liquid], 2a, 1.2b is integrated. Since the transparent resin 12 is formed, the transparent resin 12 can be filled with less air bubbles.
また、前記キャップ体４内に、前記透明樹脂１２の充填
した後において、第５図に示すように、エポキシ樹脂等
の熱硬化性の合成樹脂１３を、ステム２に穿設した孔］
４から充填するようにしても良いのであり、更にまた、
前記導波体９を、前記透明樹脂１２にて兼用することも
できる。Further, after filling the cap body 4 with the transparent resin 12, as shown in FIG.
It is also possible to fill from 4, and furthermore,
The transparent resin 12 can also serve as the waveguide 9.
図面は本発明の実施例を示し、第１図は第１実施例の縦
断正面図、第２図は第１図の■−■視断面断面図３図は
第２図の要部拡大図、第４図は透明樹脂を充填している
状態を示す断面図、第５図は第２実施例の縦断正面図で
ある。
１・・・・半導体レーザ装置、２・・・・ステム、３・
・・・透明板、４・・・・キャップ体、５・・・・ブロ
ック体、６・・・・サブマウント、７・・・・モニター
用ホオトダイオード、８・・・・半導体レーザチップ、
８ａ・・・・半導体レーザチップの前方臂開面、８ｂ・
・・・半導体レーザチップの後方臂開面、９・・・・導
波体、ｌＯａ、 １ｏｂ、１０ｃ・・・・リード端子
、１２・・・・透明樹脂、１３・・・・熱硬化性合成樹
脂。The drawings show embodiments of the present invention, and FIG. 1 is a longitudinal sectional front view of the first embodiment, FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1, and FIG. 3 is an enlarged view of the main part of FIG. 2. FIG. 4 is a sectional view showing a state in which transparent resin is filled, and FIG. 5 is a longitudinal sectional front view of the second embodiment. 1... Semiconductor laser device, 2... Stem, 3...
...Transparent plate, 4...Cap body, 5...Block body, 6...Submount, 7...Monitor photodiode, 8...Semiconductor laser chip,
8a... Front arm opening of semiconductor laser chip, 8b...
... Rear arm opening of semiconductor laser chip, 9... Waveguide, IOa, 1ob, 10c... Lead terminal, 12... Transparent resin, 13... Thermosetting composition resin.
Claims (1)
テムに前記半導体レーザチップを覆うように固着したキ
ャップ体と、該キャップ体に設けた透明板とから成る半
導体レーザ装置において、前記半導体レーザチップと、
前記透明板との間に、透明樹脂を、当該透明樹脂にて半
導体レーザチップの全体を覆うように充填したことを特
徴とする半導体レーザ装置。(1) In a semiconductor laser device comprising a stem to which a semiconductor laser chip is fixed, a cap body fixed to the stem so as to cover the semiconductor laser chip, and a transparent plate provided on the cap body, the semiconductor laser chip and,
A semiconductor laser device characterized in that a transparent resin is filled between the transparent plate and the semiconductor laser chip so as to cover the entire semiconductor laser chip.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2156203A JP2560135B2 (en) | 1990-06-14 | 1990-06-14 | Method for filling transparent resin in semiconductor laser device |
| US07/686,146 US5140384A (en) | 1990-06-14 | 1991-04-16 | Semiconductor laser device mounted on a stem |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2156203A JP2560135B2 (en) | 1990-06-14 | 1990-06-14 | Method for filling transparent resin in semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0448671A true JPH0448671A (en) | 1992-02-18 |
| JP2560135B2 JP2560135B2 (en) | 1996-12-04 |
Family
ID=15622621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2156203A Expired - Lifetime JP2560135B2 (en) | 1990-06-14 | 1990-06-14 | Method for filling transparent resin in semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2560135B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996037019A1 (en) * | 1995-05-16 | 1996-11-21 | Ams Optotech Vertrieb Gmbh | Optical amplifier with praseodymium-doped optical fibre |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109586165B (en) * | 2019-01-25 | 2020-04-07 | 维沃移动通信有限公司 | Laser module and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6183067U (en) * | 1984-11-07 | 1986-06-02 | ||
| JPS6314489A (en) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS63136684A (en) * | 1986-11-28 | 1988-06-08 | Hitachi Ltd | Photoelectron device, manufacture thereof and lead frame used for the method |
| JPS6428882A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Photoelectronic device, manufacture thereof, and lead frame used in same manufacture |
-
1990
- 1990-06-14 JP JP2156203A patent/JP2560135B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6183067U (en) * | 1984-11-07 | 1986-06-02 | ||
| JPS6314489A (en) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS63136684A (en) * | 1986-11-28 | 1988-06-08 | Hitachi Ltd | Photoelectron device, manufacture thereof and lead frame used for the method |
| JPS6428882A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Photoelectronic device, manufacture thereof, and lead frame used in same manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996037019A1 (en) * | 1995-05-16 | 1996-11-21 | Ams Optotech Vertrieb Gmbh | Optical amplifier with praseodymium-doped optical fibre |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2560135B2 (en) | 1996-12-04 |
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