JPH0448627Y2 - - Google Patents
Info
- Publication number
- JPH0448627Y2 JPH0448627Y2 JP2368387U JP2368387U JPH0448627Y2 JP H0448627 Y2 JPH0448627 Y2 JP H0448627Y2 JP 2368387 U JP2368387 U JP 2368387U JP 2368387 U JP2368387 U JP 2368387U JP H0448627 Y2 JPH0448627 Y2 JP H0448627Y2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- aperture plate
- scanning
- deflection electrode
- blanking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 41
- 238000001514 detection method Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000002164 ion-beam lithography Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2368387U JPH0448627Y2 (cs) | 1987-02-20 | 1987-02-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2368387U JPH0448627Y2 (cs) | 1987-02-20 | 1987-02-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63131060U JPS63131060U (cs) | 1988-08-26 |
| JPH0448627Y2 true JPH0448627Y2 (cs) | 1992-11-16 |
Family
ID=30822212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2368387U Expired JPH0448627Y2 (cs) | 1987-02-20 | 1987-02-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448627Y2 (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7005657B1 (en) * | 2005-02-04 | 2006-02-28 | Varian Semiconductor Equipment Associates, Inc. | Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery |
| US7361913B2 (en) * | 2005-04-02 | 2008-04-22 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control |
-
1987
- 1987-02-20 JP JP2368387U patent/JPH0448627Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63131060U (cs) | 1988-08-26 |
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