JPH0447989B2 - - Google Patents
Info
- Publication number
- JPH0447989B2 JPH0447989B2 JP60164579A JP16457985A JPH0447989B2 JP H0447989 B2 JPH0447989 B2 JP H0447989B2 JP 60164579 A JP60164579 A JP 60164579A JP 16457985 A JP16457985 A JP 16457985A JP H0447989 B2 JPH0447989 B2 JP H0447989B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- electrode
- compound semiconductor
- mask
- anodic oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000001681 protective effect Effects 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007743 anodising Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 239000010407 anodic oxide Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Radiation Pyrometers (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60164579A JPS6223179A (ja) | 1985-07-23 | 1985-07-23 | 赤外線検知素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60164579A JPS6223179A (ja) | 1985-07-23 | 1985-07-23 | 赤外線検知素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6223179A JPS6223179A (ja) | 1987-01-31 |
| JPH0447989B2 true JPH0447989B2 (enrdf_load_stackoverflow) | 1992-08-05 |
Family
ID=15795849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60164579A Granted JPS6223179A (ja) | 1985-07-23 | 1985-07-23 | 赤外線検知素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6223179A (enrdf_load_stackoverflow) |
-
1985
- 1985-07-23 JP JP60164579A patent/JPS6223179A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223179A (ja) | 1987-01-31 |
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