JPH044751B2 - - Google Patents

Info

Publication number
JPH044751B2
JPH044751B2 JP56211193A JP21119381A JPH044751B2 JP H044751 B2 JPH044751 B2 JP H044751B2 JP 56211193 A JP56211193 A JP 56211193A JP 21119381 A JP21119381 A JP 21119381A JP H044751 B2 JPH044751 B2 JP H044751B2
Authority
JP
Japan
Prior art keywords
electrode
source
region
drain
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56211193A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58115867A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP21119381A priority Critical patent/JPS58115867A/ja
Publication of JPS58115867A publication Critical patent/JPS58115867A/ja
Publication of JPH044751B2 publication Critical patent/JPH044751B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP21119381A 1981-12-28 1981-12-28 電界効果型半導体装置 Granted JPS58115867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21119381A JPS58115867A (ja) 1981-12-28 1981-12-28 電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21119381A JPS58115867A (ja) 1981-12-28 1981-12-28 電界効果型半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2303992A Division JP2532162B2 (ja) 1990-11-13 1990-11-13 電界効果型半導体装置

Publications (2)

Publication Number Publication Date
JPS58115867A JPS58115867A (ja) 1983-07-09
JPH044751B2 true JPH044751B2 (sv) 1992-01-29

Family

ID=16601922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21119381A Granted JPS58115867A (ja) 1981-12-28 1981-12-28 電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPS58115867A (sv)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953780A (sv) * 1972-09-28 1974-05-24
JPS5012985A (sv) * 1973-06-01 1975-02-10
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953780A (sv) * 1972-09-28 1974-05-24
JPS5012985A (sv) * 1973-06-01 1975-02-10
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Also Published As

Publication number Publication date
JPS58115867A (ja) 1983-07-09

Similar Documents

Publication Publication Date Title
US4566172A (en) Method of fabricating a static induction type recessed junction field effect transistor
JPH0216021B2 (sv)
US3650019A (en) Methods of manufacturing semiconductor devices
JPS61263165A (ja) 電界効果トランジスタ及びその製造方法
JP2950025B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JPS6331945B2 (sv)
JPH056354B2 (sv)
JPS60241266A (ja) 半導体装置及びその製造方法
JP3057792B2 (ja) 薄膜トランジスタの製造方法
JPH0548117A (ja) 静電誘導半導体装置
JPH044751B2 (sv)
JP2532162B2 (ja) 電界効果型半導体装置
JPS63194367A (ja) 半導体装置
JPH0682840B2 (ja) Ｍｏｓ形半導体装置
JPH0213927B2 (sv)
US3686544A (en) Mosfet with dual dielectric of titanium dioxide on silicon dioxide to prevent surface current migration path
JPS60102770A (ja) 半導体装置
JPS6115369A (ja) 半導体装置及びその製造方法
JPH07183309A (ja) 半導体デバイス
JPS5832508B2 (ja) ソウゲ−トセツゴウガタデンカイコウカトランジスタ
US6171912B1 (en) Method of manufacturing a semiconductor device comprising a field effect transistor
JP2623661B2 (ja) バイポーラ型トランジスタ
JP3535080B2 (ja) 絶縁ゲート型電界効果トランジスタ及びその製法
JP2707576B2 (ja) 半導体装置
JPH08204189A (ja) 半導体装置の製造方法